MITSUBISHI RF MOSFET MODULE
RA13H8891MA
RoHS Compliance , 889-915MHz
13W
12.5V, 2 Stage Amp. For MOBILE RADIO
RA13H8891MA MITSUBISHI ELECTRIC 24 Jan 2006
1/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
PACKAGE CODE: H2S
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
BLOCK
DIAGRAM 3
2
4
5
1
The RA13H8891MA is a 13-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 889- to
915-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3.5V (typical) and 5V (maximum). At
VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>13W, ηT>30% @ VDD=12.5V, VGG=5V, Pin=200mW
• Broadband Frequency Range: 889-915MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
RoHS COMPLIANCE
• RA13H8891MA-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA13H8891MA-101 Antistatic tray,
10 modules/tray
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA13H8891MA
RA13H8891MA MITSUBISHI ELECTRIC 24 Jan 2006
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS
(Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<5V 17 V
VGG Gate Voltage VDD<12.5V, Pin=200mW 6 V
Pin Input Power 400 mW
Pout Output Power f=889-915MHz,
ZG=ZL=50Ω 25 W
Tcase(OP) Operation Case Temperature Range -30 to +110 °C
Tstg Storage Temperature Range -40 to +110 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 889 915 MHz
Pout Output Power 13 W
ηTTotal Efficiency 30 %
2fo2nd Harmonic -35 dBc
ρin Input VSWR 3:1 —
IGG Gate Current
VDD=12.5V
VGG=5V
Pin=200mW
1 mA
— Stability VDD=10.0-15.2V, Pin=100-300mW,
Pout=1 to 20W (VGG control), Load VSWR=3:1 No parasitic oscillation —
— Load VSWR Tolerance VDD=15.2V, Pin=200mW, Pout=13W (VGG control),
Load VSWR=20:1 No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA13H8891MA
RA13H8891MA MITSUBISHI ELECTRIC 24 Jan 2006
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL PERFORMANCE
(Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICI ENCY, 2nd, 3rd HARMO N ICS vers us FREQUENCY
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
0
5
10
15
20
25
30
875 885 895 905 915
FREQUENCY f(MHz)
OUTPUT POWER Pout(W)
INPUT VSWR ρin (-)
0
20
40
60
80
100
120
TOTAL EFFICIENCY
ηT(%)
VDD=12.5V
Pin=200mW
Pout @VGG=5V
ηT @Pout=13W
ρin @Pout=13W
0
10
20
30
40
50
0 5 10 15 20 25
INPU T POWER Pin(dBm)
OUTPUT POWER
Pout(dBm)
POWER GAIN Gp(dB)
0
1
2
3
4
5
DRAIN CURRENT IDD(A)
f=880MHz,
VDD=12.5V,
VGG=5V
Pout
IDD
Gp
0
10
20
30
40
50
0 5 10 15 20 25
INPUT POWER Pin(dBm)
OUTPUT POWER
Pout(dBm)
POWER GAIN Gp(dB)
0
1
2
3
4
5
DRAIN CURRENT IDD(A)
f=900MHz,
VDD=12.5V,
VGG=5V
Pout
Gp
IDD
-70
-60
-50
-40
-30
-20
875 885 895 905 915
FREQUENCY f(MHz)
HARMONICS (dBc)
VDD=12.5V
Pin=200mW
2nd @Pout=13W
3rd @Pout=13W
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE versus DRAIN VOLTAGE
0
5
10
15
20
25
30
35
40
6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
OUTPUT POWER Pout(W)
0
1
2
3
4
5
6
7
8
DRAIN CURRENT IDD(A)
Pout
f=880MHz,
VGG=5V,
Pin=200mW
IDD
0
10
20
30
40
50
0 5 10 15 20 25
INPUT POWER Pin(dBm)
OUTPUT POWER
Pout(dBm)
POWER GAIN Gp(dB)
0
1
2
3
4
5
DRAIN CURRENT IDD(A)
f=915MHz,
VDD=12.5V,
VGG=5V
Pout
Gp
IDD
0
5
10
15
20
25
30
35
40
6 8 10 12 14 16
DRAIN VOLT AGE VDD(V)
OUTPUT POWER Pout(W)
0
1
2
3
4
5
6
7
8
DRAIN CURRENT IDD(A)
Pout
f=900MHz,
VGG=5V,
Pin=200mW
IDD
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA13H8891MA
RA13H8891MA MITSUBISHI ELECTRIC 24 Jan 2006
4/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL PERFORMANCE
(Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE versus G ATE VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
0
5
10
15
20
25
30
22.533.544.555.56
GATE VOLTAGE VGG(V)
OUTPUT POWER P out(W)
0
1
2
3
4
5
6
DRAIN CURRENT IDD(A)
Pout
f=880MHz,
VDD=12.5V,
Pin=200mW IDD
0
5
10
15
20
25
30
35
40
6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
OUTPUT POWER P out(W)
0
1
2
3
4
5
6
7
8
DRAIN CURRENT IDD(A)
Pout
f=915MHz,
VGG=5V,
Pin=200mW
IDD
0
5
10
15
20
25
30
22.533.544.555.56
GATE VOLTAGE VGG(V)
OUTPUT POWER P out(W)
0
1
2
3
4
5
6
DRAIN CURRENT IDD(A)
Pout
f=900MHz,
VDD=12.5V,
Pin=200mW
IDD
0
5
10
15
20
25
30
22.533.544.555.56
GATE VOLTAGE VGG(V)
OUTPUT POWER P out(W)
0
1
2
3
4
5
6
DRAIN CURRENT IDD(A)
Pout
f=915MHz,
VDD=12.5V,
Pin=200mW
IDD
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA13H8891MA
RA13H8891MA MITSUBISHI ELECTRIC 24 Jan 2006
5/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
12.0 ±1
16.5 ±1
43.5 ±1
55.5 ±1
66.0 ±0.5
60.0 ±0.5
51.5 ±0.5
3.0 ±0.3
7.25 ±0.8
14.0 ±1 21.0 ±0.5
9.5 ±0.5 2.0 ±0.5
2-R2 ±0.5
17.0 ±0.5
Ø0.45 ±0.15
4.0 ±0.3
5
1 2 3 4
3.1 +0.6/-0.4
7.5 ±0.5 2.3 ±0.3
(50.4)
0.09 ±0.02
(9.88)
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
OUTLINE
DRAWING
(
mm
)
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA13H8891MA
RA13H8891MA MITSUBISHI ELECTRIC 24 Jan 2006
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TEST BLOCK DIAGRAM
C1, C2: 4700pF, 22uF in parallel
Signal
Generator Attenuator Pre-
amplifier Attenuator
Power
Meter
Directional
Coupler
Z
G
=50
Ω
Z
L
=50Ω
- +
DC Power
Supply VGG
+ -
DC Power
Supply VDD
C2C1
2
1 3 4
DUT 5Spectrum
Analyzer
Power
Meter
Attenuator
Directional
Coupler
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT
23
1
5
4
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA13H8891MA
RA13H8891MA MITSUBISHI ELECTRIC 24 Jan 2006
7/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic
cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the
substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form
the bias and matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection.
Following conditions must be avoided:
a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) Frequent on/off switching that causes thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink
may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws
or later when thermal expansion forces are added).
A thermal compound between module and heat sink is recommended for low thermal contact resistance and to
reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause
bubbles in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=13W, VDD=12.5V and Pin=200mW each stage transistor operating conditions are:
Stage Pin
(W) Pout
(W) Rth(ch-case)
(°C/W) IDD @ ηT=30%
(A) VDD
(V)
1st 0.2 3.0 23.0 0.37
2nd 3.0 13.0 3.0 2.60 12.5
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (12.5V x 0.37A – 3.0W + 0.2W) x 23.0°C/W = Tcase + 42.0 °C
Tch2 = Tcase + (12.5V x 2.60A – 13.0W + 3.0W) x 3.0°C/W = Tcase + 67.5 °C
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=13W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) -
Pout + Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (13W/30% – 13W + 0.2W) = 0.98
When mounting the module with the thermal resistance of 0.98W, the channel temperature of each stage transistor
is: Tch1 = Tair + 72.0 °C
Tch2 = Tair + 97.5 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA13H8891MA
RA13H8891MA MITSUBISHI ELECTRIC 24 Jan 2006
8/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Output Power Control:
Depending on linearity, the following two methods are recommended to control the output power:
a) Non-linear FM modulation:
By the gate voltage (VGG).
When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage
current flows from the battery into the drain.
Around VGG=3V, the output power and drain current increases substantially.
Around VGG=3.5V (typical) to VGG=5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin.
The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and
drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50Ω?
c) Is the source impedance ZG=50Ω?
Frequent on/off switching:
In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips
and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally
induced mechanical stress.
Quality:
Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions
exceeding those of mobile radios.
This module technology results from more than 20 years of experience, field proven in tens of millions of mobile
radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout,
which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures
are found.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there
is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or propert
y
damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as
(i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction o
r
mishap.
