MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to 915-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES * Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) * Pout>13W, T>30% @ VDD=12.5V, VGG=5V, Pin=200mW * Broadband Frequency Range: 889-915MHz * Low-Power Control Current IGG=1mA (typ) at VGG=5V * Module Size: 66 x 21 x 9.88 mm * Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power BLOCK DIAGRAM 2 3 1 4 5 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) PACKAGE CODE: H2S RoHS COMPLIANCE * RA13H8891MA-101 is a RoHS compliant products. * RoHS compliance is indicate by the letter "G" after the Lot Marking. * This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA13H8891MA-101 Antistatic tray, 10 modules/tray RA13H8891MA MITSUBISHI ELECTRIC 1/8 24 Jan 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA13H8891MA MAXIMUM RATINGS (Tcase=+25C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS VDD Drain Voltage VGG<5V VGG Gate Voltage VDD<12.5V, Pin=200mW Pin Input Power Pout Output Power Tcase(OP) Tstg RATING UNIT 17 V 6 V 400 mW 25 W Operation Case Temperature Range -30 to +110 C Storage Temperature Range -40 to +110 C f=889-915MHz, ZG=ZL=50 The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS (Tcase=+25C, ZG=ZL=50, unless otherwise specified) SYMBOL PARAMETER f CONDITIONS Frequency Range Pout Output Power T Total Efficiency nd 2fo 2 in Input VSWR Harmonic IGG Gate Current -- Stability -- Load VSWR Tolerance MIN TYP 889 VDD=12.5V VGG=5V Pin=200mW VDD=10.0-15.2V, Pin=100-300mW, Pout=1 to 20W (VGG control), Load VSWR=3:1 VDD=15.2V, Pin=200mW, Pout=13W (VGG control), Load VSWR=20:1 MAX UNIT 915 MHz 13 W 30 % -35 dBc 3:1 -- 1 mA No parasitic oscillation -- No degradation or destroy -- All parameters, conditions, ratings, and limits are subject to change without notice. RA13H8891MA MITSUBISHI ELECTRIC 2/8 24 Jan 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA13H8891MA TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified) rd 2nd, 3 HARMONICS versus FREQUENCY OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY VDD=12.5V Pin=200mW 20 100 -30 80 15 60 T @Pout=13W 10 40 5 20 in @Pout=13W 0 875 0 885 895 905 FREQUENCY f(MHz) 915 -40 -60 -70 875 5 f=880MHz, VDD=12.5V, VGG=5V 10 1 0 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 2 IDD 5 10 15 20 885 895 905 FREQUENCY f(MHz) 915 5 40 4 30 3 Gp 20 2 IDD f=900MHz, VDD=12.5V, VGG=5V 10 0 0 @Pout=13W Pout DRAIN CURRENT I DD(A) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 3 Gp 20 rd 50 4 30 3 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER Pout 40 2nd @Pout=13W -50 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 50 VDD=12.5V Pin=200mW 0 25 0 INPUT POWER Pin(dBm) 5 10 15 20 1 DRAIN CURRENT IDD(A) Pout @VGG=5V -20 HARMONICS (dBc) 25 120 TOTAL EFFICIENCY T(%) INPUT VSWR in (-) OUTPUT POWER P out(W) 30 0 25 INPUT POWER Pin(dBm) OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 5 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) Pout 40 4 30 3 Gp 20 2 IDD f=915MHz, VDD=12.5V, VGG=5V 10 0 0 5 10 15 20 1 DRAIN CURRENT I DD(A) 50 0 25 INPUT POWER Pin(dBm) 8 35 30 7 Pout 6 25 5 IDD 20 4 15 3 10 2 5 1 0 0 6 RA13H8891MA 8 10 12 14 DRAIN VOLTAGE VDD(V) 16 40 OUTPUT POWER P out(W) f=880MHz, VGG=5V, Pin=200mW DRAIN CURRENT I DD(A) OUTPUT POWER P out(W) 40 OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 8 f=900MHz, VGG=5V, Pin=200mW 35 30 7 Pout 6 25 5 20 4 IDD 15 3 10 2 5 1 0 0 6 8 10 12 14 DRAIN VOLTAGE VDD(V) MITSUBISHI ELECTRIC 3/8 DRAIN CURRENT I DD(A) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 16 24 Jan 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA13H8891MA TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 8 30 7 6 Pout 25 5 20 4 IDD 15 3 10 2 5 1 0 0 6 8 10 12 14 DRAIN VOLTAGE VDD(V) 16 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 30 25 Pout 20 5 4 IDD 15 3 10 2 5 1 0 0 2 2.5 3 3.5 4 4.5 5 GATE VOLTAGE VGG(V) 5.5 6 OUTPUT POWER P out(W) 6 f=880MHz, VDD=12.5V, Pin=200mW DRAIN CURRENT IDD(A) OUTPUT POWER P out(W) 30 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 6 f=900MHz, VDD=12.5V, Pin=200mW 25 20 Pout 5 4 IDD 15 3 10 2 5 1 0 0 2 2.5 3 3.5 4 4.5 5 GATE VOLTAGE VGG(V) 5.5 DRAIN CURRENT IDD(A) f=915MHz, VGG=5V, Pin=200mW 35 DRAIN CURRENT IDD(A) OUTPUT POWER P out(W) 40 6 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 6 f=915MHz, VDD=12.5V, Pin=200mW 25 5 Pout 20 4 IDD 15 3 10 2 5 1 0 0 2 RA13H8891MA 2.5 3 3.5 4 4.5 5 GATE VOLTAGE VGG(V) 5.5 DRAIN CURRENT IDD(A) OUTPUT POWER P out(W) 30 6 MITSUBISHI ELECTRIC 4/8 24 Jan 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA RoHS COMPLIANCE OUTLINE DRAWING (mm) 66.0 0.5 7.25 0.8 51.5 0.5 3 2.0 0.5 2 4 4.0 0.3 9.5 0.5 5 1 14.0 1 2-R2 0.5 17.0 0.5 60.0 0.5 21.0 0.5 3.0 0.3 O0.45 0.15 12.0 1 16.5 1 43.5 1 (50.4) (9.88) 2.3 0.3 7.5 0.5 0.09 0.02 3.1 +0.6/-0.4 55.5 1 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) RA13H8891MA MITSUBISHI ELECTRIC 5/8 24 Jan 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA13H8891MA TEST BLOCK DIAGRAM Power Meter DUT 1 Signal Generator Attenuator Preamplifier Attenuator Directional Coupler 3 2 Spectrum Analyzer 4 ZL=50 ZG=50 C1 5 Directional Coupler Power Meter Attenuator C2 + DC Power Supply VGG + DC Power Supply VDD C1, C2: 4700pF, 22uF in parallel 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) EQUIVALENT CIRCUIT 2 3 4 1 5 RA13H8891MA MITSUBISHI ELECTRIC 6/8 24 Jan 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA13H8891MA PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION: Construction: This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene) d) Frequent on/off switching that causes thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, and oscillation ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: Heat sink flatness must be less than 50 m (a heat sink that is not flat or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm. Soldering and Defluxing: This module is designed for manual soldering. The leads must be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=13W, VDD=12.5V and Pin=200mW each stage transistor operating conditions are: Pin IDD @ T=30% VDD Pout Rth(ch-case) Stage (C/W) (A) (W) (W) (V) st 0.2 3.0 23.0 0.37 1 12.5 nd 2 3.0 13.0 3.0 2.60 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.5V x 0.37A - 3.0W + 0.2W) x 23.0C/W = Tcase + 42.0 C Tch2 = Tcase + (12.5V x 2.60A - 13.0W + 3.0W) x 3.0C/W = Tcase + 67.5 C For long-term reliability, it is best to keep the module case temperature (Tcase) below 90C. For an ambient temperature Tair=60C and Pout=13W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / T ) Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90C - 60C) / (13W/30% - 13W + 0.2W) = 0.98 When mounting the module with the thermal resistance of 0.98W, the channel temperature of each stage transistor is: Tch1 = Tair + 72.0 C Tch2 = Tair + 97.5 C The 175C maximum rating for the channel temperature ensures application under derated conditions. RA13H8891MA MITSUBISHI ELECTRIC 7/8 24 Jan 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA13H8891MA Output Power Control: Depending on linearity, the following two methods are recommended to control the output power: a) Non-linear FM modulation: By the gate voltage (VGG). When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage current flows from the battery into the drain. Around VGG=3V, the output power and drain current increases substantially. Around VGG=3.5V (typical) to VGG=5V (maximum), the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin. The gate voltage is used to set the drain's quiescent current for the required linearity. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 F (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50? c) Is the source impedance ZG=50? Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap. RA13H8891MA MITSUBISHI ELECTRIC 8/8 24 Jan 2006