SOD323 SILICON VARIABLE CAPACITANCE DIODES ISSUE 1- NOVEMBER 1998 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low |, Enabling Excellent Phase Noise Performance (Iz Typically <200pA at 25V) * Miniature surface mount package ZMV829/A/B to ZMV835/A/B SOD323 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL MAX UNIT Forward Current lr 200 mA Power Dissipation at Tamp=25C Prot 330 mw Operating and Storage Temperature Range TT stg -55 to +150 c ELECTRICAL CHARACTERISTICS (at Tamb=25C) PARAMETER SYMBOL |MIN_ |TYP MAX UNIT |CONDITIONS Reverse Breakdown Ver 25 Vo flp=10nA Voltage Reverse Voltage Leakage lp 0.2 20 nA |VR=20V Temperature Coefficient n 300 400 ppm/C| Vpa=3V, f=1MHz of Capacitance TUNING CHARACTERISTICS (at Tampb=25C) Nominal Capacitance (pF) Minimum Capacitance Ratio Va=2V, f=1MHz Q Cy/ Coo PART NO @ Vp=3V at f=1MHz MIN NOM MAX *50MHz MIN MAX ZMV829A 7.38 8.2 9.02 250 4.3 58 ZMV830A 9.0 10.0 11.0 300 4.5 6.0 ZMV831A 13.5 15.0 16.5 300 4.5 6.0 ZMV832A 19.8 22.0 24.2 200 5.0 6.5 ZMV833A 29.7 33.0 36.3 200 5.0 6.5 ZMV834A 42.3 47.0 51.7 200 5.0 6.5 ZMV835A 61.2 68.0 74.8 100 5.0 6.5 Note: No suffix +20% (e.g. ZMV830), suffix B + 5% (e.g. ZMV830B) Spice parameter data is available upon request for these devicesZMV829/A/B to ZMV835/A/B 2 YD oO c & oO a a oO oO oO a 2 a 10 100 Reverse Voltage (Volts) Diode Capacitance Device Partmark Device Partmark Device Partmark ZMV829 DA ZMV829A AA ZMV829B CA ZMV830 DB ZMV830A AB ZMV830B CB ZMV831 DC ZMV831A AC ZMV831B cc ZMV832 DD ZMV832A AD ZMV832B cD ZMV833 DE ZMV833A AE ZMV833B CE ZMV834 DF ZMV834A AF ZMV834B CF ZMV835 DG ZMV835A AG ZMV835B cG