Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 0 Publication Order Number:
MMPQ2222A/D
1
MMPQ2222A
Preferred Device
Quad General Purpose
Transistor
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 40 Vdc
Collector–Base Voltage VCB 75 Vdc
Emitter–Base V oltage VEB 5.0 Vdc
Collector Current – Continuous IC500 mAdc
Four
Transistors
Equal Power
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD1.0
8.0
Watts
mW/°C
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD2.4
19.2
Watts
mW/°C
Operating and Storage
Junction Temperature Range TJ, Tstg –55 to +150 °C
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SO–16
CASE 751B
STYLE 4
MARKING DIAGRAM
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
MMPQ2222A SO–16 48 Units/Rail
1
2
3
4
5
6
7
8
10
11
12
13
14
15
16
9
MMPQ2222A
AWLYWW
MMPQ2222A = Specif-
ic Device Code
A = Assembly Location
WL = Wafer Lot
Y = Year
WW = Work Week
MMPQ2222A
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (Note 1.)
(IC = 10 mAdc, IB = 0) V(BR)CEO 40 – – Vdc
Collector–Base Breakdown Voltage
(IC = 10 Adc, IE = 0) V(BR)CBO 75 – – Vdc
Emitter–Base Breakdown Voltage
(IB = 10 Adc, IC = 0) V(BR)EBO 5.0
––
––
–Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
ICBO –
––
–50
10
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0) IEBO – – 100 nAdc
ON CHARACTERISTICS
DC Current Gain (Note 1.)
(IC = 100 A, VCE = 10 V)
(IC = 1.0 mA, VCE = 10 V)
(IC = 10 mA, VCE = 10 V)
(IC = 150 mA, VCE = 10 V)
(IC = 500 mA, VCE = 10 V)
(IC = 150 mA, VCE = 1.0 V)
hFE 35
50
75
100
40
50
–
–
–
–
–
–
–
–
–
300
–
–
–
Collector–Emitter Saturation Voltage (Note 1.)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat) –
––
–0.3
1.0
Vdc
Base–Emitter Saturation Voltage (Note 1.)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat) –
––
–1.2
2.0
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain – Bandwidth Product (Note 1.)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT200 350 – MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob – 4.5 – pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib – 17 – pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VCC = 30 Vdc, VBE(off) = –0.5 Vdc, IC = 150 mAdc,
IB1 = 15 mAdc)
ton – 25 – ns
Turn–Off Time
(VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) toff – 250 – ns
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
MMPQ2222A
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3
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 1.0 watt.
INFORMATION FOR USING THE SO–16 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SO–16 POWER DISSIPATION
PD = TJ(max) – TA
RθJA
PD = 150°C – 25°C
125°C/W = 1.0 watt
The power dissipation of the SO–16 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipa-
tion. Power dissipation for a surface mount device is deter-
mined b y T J(max), the maximum rated junction temperature
of the die, RθJA, the thermal resistance from the device
junction to ambient, and the operating temperature, TA.
Using the values provided on the data sheet for the SO–16
package, PD can be calculated as follows:
The 125°C/W for the SO–16 package assumes the use of
the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 1.0 watt. There are
other alternatives to achieving higher power dissipation
from the SO–16 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can
be doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the
rated temperature of the device. When the entire device is
heated to a high temperature, failure to complete soldering
within a short time could result in device failure. There-
fore, the following items should always be observed in
order to minimize the thermal stress to which the devices
are subjected.
•Always preheat the device.
•The delta temperature between the preheat and
soldering should be 100°C or less.*
•When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
•The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
•When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
•After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
•Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause exces-
sive thermal shock and stress which can result in damage
to the device.
SO–16
mm
inches
0.060
1.52
0.275
7.0
0.024
0.6 0.050
1.270
0.155
4.0
MMPQ2222A
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4
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
18
16 9
SEATING
PLANE
F
J
M
RX 45
G
8 PLP
–B–
–A–
M
0.25 (0.010) B S
–T–
D
K
C
16 PL
S
B
M
0.25 (0.010) A S
T
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A9.80 10.00 0.386 0.393
B3.80 4.00 0.150 0.157
C1.35 1.75 0.054 0.068
D0.35 0.49 0.014 0.019
F0.40 1.25 0.016 0.049
G1.27 BSC 0.050 BSC
J0.19 0.25 0.008 0.009
K0.10 0.25 0.004 0.009
M0 7 0 7
P5.80 6.20 0.229 0.244
R0.25 0.50 0.010 0.019
SO–16
CASE 751B–05
ISSUE J
STYLE 4:
PIN 1. COLLECTOR, DYE #1
2. COLLECTOR, #1
3. COLLECTOR, #2
4. COLLECTOR, #2
5. COLLECTOR, #3
6. COLLECTOR, #3
7. COLLECTOR, #4
8. COLLECTOR, #4
9. BASE, #4
10. EMITTER, #4
11. BASE, #3
12. EMITTER, #3
13. BASE, #2
14. EMITTER, #2
15. BASE, #1
16. EMITTER, #1
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MMPQ2222A/D
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