MOTOROLA SC 4XSTRS/R FP Ib DE pese7esy OOaOSlb 2 q - er ree - ~ aces ns eeE TTT TTT 2 eR eee 6367254 MOTOROLA sc OXSTRS/A Foo 96D" 80516 D 7-33-13 : - _ /- 33 oS : MOTOROLA - 2N6648 - ' =. SEMICONDUCTOR sues See Page mm TECHNICAL DATA . 3-209 - NPN Silicon 2N6676 Power Transistors 2N6677 The 2N6676, 2N6677, 2N6678, MJH6676, MJH6677, and MJH6678 transistors are 2N6678 designed for high voltage switching applications such as: ;' i MJH6676 Off-Line Supplies @ Converter Circuits : MJ H6677 @ Pulse Width Modulated Regulators Specitication Features High Voltage Capability MJH6678 Fast Switching Speeds Low Saturation Voltages High SOA Ratings NPN SILICON POWER TRANSISTORS 16 AMPERES 300, 350, 400 VOLTS 125 and 175 WATTS MAXIMUM RATINGS . 2N6676 | 2N6677 | 2N6678 Rating Symbol | sjH6676 | MuH6677 | MJHes7e | UT" Collector-Emitter Voltage VCEV 450 550 650 Vde Collector-Emitter Voltage VCEX 350 400 450 Vde CASE 1-05 Collector-Emitter Voltage VCEO 300 350 400 Vde TO-204AA * 2N6676 I Emitter-Base Voltage VEBO 8 Vdc 2N6677 Collector Current Continuous Ic 15 Adc 2N6678 Peak Icom 20 Base Current Continuous 5 5 Adc Maximum Lead Temperature At 235 C Distance > 1/16 in. (1.58 mm) from seating plane for 10 s max MAXIMUM THERMAL RATINGS 2N6676 MJH6676 Rating Symbol 2N6677 MJH6677 Unit 2N6678 MJH6678 cA SE 340-01 Thermal Resistance Junction to Case Rec 1 CW TO-218AC Power Dissipation Tc = 25C Pr 175 125 Watts MJH6676 Derate above 25C 1 1 WFC MJH6677 - MJH6678 Operating and Storage Junction Ty. Tstg | 65 to +200 65 to +150 c Fb DE Beae7esy Oo80517 4 , 6367254 MOTOROLA SC (XSTRS/R F) _. ... 96D 80517. D_ . 2N6676, 2NG677, 2N6678 7T-33-/3 MJH6676, MJH6677, MJH6678 TF B3B-/5 1 thane ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.) | Characteristic Symbol Min | Mex | unit | . OFF CHARACTERISTICS I 1 Collector Cutoff Current Icev mA . (VcE = Rated Vcey, VBE(otf) = 1.5 Vde} - 0.1 (VcE = Rated VcEV, VBEloff) = 1.5 Vdc, Te = 100C) - 1 Emitter Cutoff Current leBo - 2 mA (Veg = 8 Vdc, Ic = 0) Collector-Emitter Sustaining Voltage 2N6676, MJH6676 VCEO(sus) 300 _ Vde (Ic = 200 mA, ip = 0) 2N6677, MJH6677 350 2N6676, MJH6678 400 _ Collector-Emitter Sustaining Voltage 2N6676, MJH6676 VCEX{sus) 350 _ Vde {ic = 15 A, VCE(pk) = Velamp = Rated Vcex) 2N6677, MJH6677 400 - . 2N6678, MJH6678 450 _ SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased Ish See Figure 1 Clamped Inductive SOA with Base Reverse Biased RBSOA See Figure 2 ON CHARACTERISTICS DC Current Gain (ic = 15 A, Voge = 3 V) hre 8 ~ Base-Emitter Saturation Voltage (Ic = 15 A, IR = 3 A} VBE(sat) _ 1.5 Vde Collector-Emitter, Saturation Voltage (Ic = 15 A, Ip = 3A) VCE(sat) _ 1.6 Vde tlc = 18 A, Ig = 3A, Te = 100C) 2 DYNAMIC CHARACTERISTICS Current Gain (Ic = 1A, Voce = 10 Vde, f = 5 MHz) Ihtel 3 10 ~ Output Capacitance (Ic = 1A, Vog = 10 Vde, f = 0.1 MHz) Cob 150 500 pF SWITCHING CHARACTERISTICS Resistive Load Delay Time tg _ 0.1 BS Rise Time tr _ 0.6 Storage Time Vec = 200V, I = 154, = 5 t _ 2.5 Int = tg2 = 3A, ty = 20us, Te = 25C s Fall Time Duty Cycle < 2% tf _ 0.5 Delay Time Veo = 6V, RE = 13.52 td _ 0.4 i Rise Time {See Figure 3) tr _ 1 . Te = 100C Storage Time ts _ 4 Fall Time tf - 1 Inductive Load Cross Over Time L = 60 pH Te = 25C te _ 0.5 BS VcE(pk) = Vclamp = Rated Vcex Tr = 100C _ (See Figure 3) c = 100 08 3-251 MOTOROLA SC IXSTRS/R FT 2N6676, 2N6677, 2N6678 | MJH6676, MJH6677, MJH6678 , ADJ FOR ty too N81 . 47 NON IND + aw 2 0.001 T 3 180 7 = 310 qb DE pese7ess 0080519 4 7 _ Dd. T' BBS RL = 13.5980 NON IND IN $55, 0.005 uF aye AAA. = a vv Q3 = | 22 7 B(Clamp) 224 Q2 "AR 50 pF a7 . av . 50 $2 ot Ll Lx yet heel 20 us = Veo = MIN Q1,02 = -2N6350 ADJ FOR igo FREQ = 500 Hz Q3 = 2N3762 Q4, 05, 06,07 = CA3725 QUAD TRANSISTOR ARRAY NOTE: Battery symbols Vcc, Vgq, Vaz. Veiclamp) indicate rigorously fil- tered voltage sources at the cir- cuit terminals to accommodate the fast rise and fall times and high currents present in the circuit. NOTE: SW1 closed for tr, tg, te. SW1 Open for tg. Figure 3. Switching Times Test Circuit ig = AB t = BC tg = XY tf = Y-2 transition = X-W NOTE: TRANSITION TIME FROM 90% 181 to 90% IB2 MUST BE LESS THAN 0.5 us. Figure 4. Switching Time Measurements 3-253 Ie pk 80% Veetpy) {/\ 90% i ti TIME Figure 5. inductive Switching Measurements | | momerfiae