Philips Semiconductors ee Product specification Voltage regulator diodes BZV55 series FEATURES DESCRIPTION Total power dissipation: Low-power voltage regulator diodes in smail hermetically sealed glass max. 500 mW SOD80C SMD packages. The diodes are available in the normalized E24 +2% Three tolerance series: +2%, +3% (B2ZV55-B), +3% (BZV55-F) and 15% (BZV55-C)} tolerance range. The series and +5% consists of 37 types with nominal working voltages from 2.4 to 75 V. Working voltage range: nom. 2.4 to 75 V (E24 range) Non-repetitive peak reverse power k a dissipation: max. 40 W. C) | + MAM215 APPLICATIONS Low-power voltage stabilizers or The cathode is indicated by a yellow band. voltage references. . . , Fig.1 Simplified outline (SOD80C) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Ir continuous forward current ~ 250 mA lzguq non-repetitive peak reverse current | tp = 100 1s; square wave; see Tables 7, = 25 C prior to surge - 1and2 Prot total power dissipation Tamb 50 C; note 1 - 400 mw tie-point <50 C; note 1 - 500 mw Pzsm non-repetitive peak reverse power tp = 100 ys; square wave; - 40 Ww dissipation Tj = 25 C prior to surge; see Fig.3 Tatg storage temperature -65 +200 = |C Tj junction temperature 65 +200 | C Note 1. Device mounted on a ceramic substrate of 10 x 10 x 0.6 mm. 1996 Apr 26 7-22Philips Semiconductors Product specification Voltage regulator diodes BZV55 series ELECTRICAL CHARACTERISTICS Total BZV55-B, F and.C series Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER a CONDITIONS MAX. UNIT Ve forward voltage Ir = 10 mA; see Fig.4 0.9 Vv la reverse current BZV55-B/F/C2V4 VR=l1V 50 pA BZV55-B/F/C2V7 Va=1V 20 pA BZV55-B/F/C3V0 Va=1V 10 pA BZV55-B/F/C3V3 Va=tV 5 pA BZV55-B/F/C3V6 Va=tV 5 pA BZV55-B/F/C3V9 VRatV 3 pA BZV55-B/F/C4V3 Va=l1Vv 3 pA BZV55-B/F/C4V7 VR =2Vv 3 pA BZV55-B/F/C5V1 VR=2Vv 2 HA BZV55-B/F/C5V6 VR=2V 1 HA BZV55-B/F/C6V2 Va=4V 3 pA BZV55-B/F/C6V8 Va=4V 2 pA BZV55-B/F/C7V5 Va=5V 1 pA BZV55-B/F/C8V2 VR=5V 700 nA BZV55-B/F/C9V1 Va=6V 500 nA BZV55-B/F/C10 Va=7V 200 nA BZV55-B/F/C11 VR =BV 100 nA BZV55-B/F/C12 Va=8V 100 nA BZV55-B/F/C13 Va =8V 100 nA BZV55-B/F/C15 to 75 Ve = 0.7V nom 50 nA 1996 Apr 26 7-23Product specification Philips Semiconductors BZV55 series Voltage regulator diodes Sah Sg oes | v0e | ysl | O cz | ose | 09 | 9Sz2 | See | OZ're | OES | OS ve | OSE v2 Sak 09 002 | v'si | vot | Sg oz | osz | 09 | eee | sOe | OZ ze | Of'L2 | OF'ze | O9'Lz ze gh 09 oet | vOL | bel | sc Gt | Sez | 09 | ate | gat | 0902 | Ov: | OF'02 | 0961 0z S} OZ O'ol | vel | vet | Sr ol | Sez} os | ter | BOL | OS'BL | OFZ | OF'Bl | 0921 8h ch SZ ov | wet | vor | OF OL | 002 | og | EZE | ESE | OS'OL | OS'SL | GEOL | OZ'SE 91 oz GL oct | vit | 26 | o ot | O02 | oS | gsi | BEL | SPSL | SoL | OGSE | OZ FL SI sz 08 o1|r6 |oz | o OL | OzL | oS | LoL | vet | EEL | LOeL | OGEL | OZ'ZL el Gz se oor| ye |o9 | sz OL | ost | oS | Leb | oLL | 9eeL | poLL | Oz | OB LL at 2 $e o6 |v2 | ve | 02 ol | ost | os | gut | vor [eet | 29OL | OZ LL | Og'OL LL oe 06 os |r9 | Sp | 02 8 ost |os | gol | e6 jogo }az6 | OZoOl | 086 OL oe OSI oz | gs {ee | st 9 ool |or | 96 | Ge |ze6 jess |ez6 | zee LAG Ov Ost zo |ov |ee | st 9 og jor | ze | 22 |sve |sez |oee | v08 ZA ov OSI eg | or | Sz | St 9 os joe | 64 | OZ {ele | eee |so2 |Se2Z SAL o'9 002 Sp |oe | at | St 9 os joe | 2z | 79 |o00z2 |o99 | re9 | 99'9 8A9 09 002 ze | ee | vo | ot 9 ost | oy | 99 | eS |6e9 | 109 |zEe9 | 809 ZA 09 o0 Ge | at | oe] oF St | OOF +08 | o9 | 2s |zes fers |izs | ers 9AS 09 oo zt |eo-| ze |-09 | ov | 08 | 00r | rs | Br [Ses |ser |OZs | 00S LAS 09 OO zo | vi- | se- | 08 os | 00g | sey | os | ve | rer |osr |ezr | LOY LAY 09 OSr 0 | sz-|se-| 06 og | 009 | ote | Oy | OF Jerry [Lily |6er | ler EAP 9 OSP 0 | g@-|Se- | 06 sg | 009 | Oop | be | Ze |eor |aze |aee | eee 6AE 09 OSP 0 | v2 | Se-| 06 se | oo9 |sze | ee | ve |ize |eve |z9e | eve 9AE 09 OSr oO | re-| se-| s se | 009 | ose | se Le lore love | zee | eee EAE 09 OSP Oo | be-] se- | 96 og | 009 ; Sze | ce | #2 |e0e |tez |90e | re? OAE 09 OSr 0 | oe |se-] 001 | SZ | 009 |ooe | Be | Se jece |e | Sze | s92 LN@ 09 OSr Oo | 9i-|Se-] ool | o2 | 009 | sze | oe | ze |zv2 jee? [sre | sez pag XV XV "XVIN| GAL | NIE | XIN | GAL | XWIN | GAL | XIN | NIN | XIN | NIN | XWIN | NIV = Gus con oot = 438 vu - ren | wus e ml (9) %SF 1OL | (4) %EFIOL | (G)%ZF'IOL | XXX (y) 882) AO=4A_ | (g pue g sbiy sas) 940 440 .INaYdYND ZHWE=s1e| ywurg =) 42 (v5) #Pa yl g = 181Z) e a-ssaza ASUBARY NVSd (ad) Pp OVAW) 25 FONVLSISSY (A) 2A AALLILSdSY-NON | d9300Id | 343509 dS WILNAY3410 ADVLIOA SNDINOM peO/A/G 1 PAZO/A/E-SSAZE dh Jog peyloeds aswueujo ssayun 9, Sz = !L b e1qe) 7-24 1996 Apr 26Product specification Philips Semicanductors BZV55 series Voltage regulator diodes zo ce gee |zoe|rez| sce | se | oos | ot | O62 | O04 | Ot Zz | Oz | OS'9Z | OS'EL GZ Sz'0 se g6z | z1z| 9:99] ope | 06 | Sze | ost | O'ZZ | O'v9 | COOL | 0099 | OF'69 | 0999 89 0 ce git |y9|e'es| siz | o8 | ose | oz | 099 | O'8S | O6'E9 | O1'09 | Oz'E9 | O8'09 29 0 Or geg |ozs|zzs| oo | og | sev | oor | o'09 | OS | OZ'Z9 | OE'HS | O1'ZS | OFS 9S v'0 Ov zzs |ors|99r| ost | 09 | OO | 06 | OFS | Or | OSS | OSG | 002s | CO';0S LS 0 Or gis |or|ozr| ozi | os | sze | se | os | Ov | OP'ar | 0OSr | O6'Zr | OL OF Lv 90 Ov gor |aiv|gze| ost | sy | sze | sa | oor | OOF | Cr | OL ty | OB Er | Ol er er 0 Sp zip | roel ree] oc: | ov | ose | 08 | O-bb | OE | OZOH | OB ZE | O8'6E | OZBE 6 80 SP vis |oee}roe| o6 | se. | ose | ce | ogee | Ove | OL-ZE | O6'rE | O2'9E | OE'SE 9 60 Sp yee | zezt-rze| og | se | see | sz | ose | oe | oO'vE | OOZE | OZ'e | OE'ZE Ob os vez |gez/rrz| og | oe | coe | o | oe | O82 | O6'0E | 0162 | O9'0E | OF Ez O 0'l os ese | rez | ric | 08 sz | oo | so | B82 | L'Se | OBze | OZ 92 | OS'zz | OS'9z le XV XV "XWIN | GAL | NIA | XW] GAL | XWIN | GAL | XVI] NIW | "XW | NIW | XVI | NIW = - v cer 001 236 e MU wn gro =*92 | (9) %SF 1OL | (a) %eT TOL | (@)KzFIOL | XXX A ye 940 410 (y) Wz) AQ=4%A_ | (9 pue g shi 99s) a-ssAza LNaYHNS ZHAN L= $38) yu gz = 992) Je (75) #Pa yu z = 8912] Je JSYSASHY NV3d (ad) 5 Ow/AW) Zs FONVLSISSY (A) 2A FALLLLEdSEPNON | d9 30010 | 4309 dWAL WILN3a4si0 ADVLIOA DNINHOM poyroeds asimuayjo ssaun 9, gz = !L GLO/4/ 1 Z29/4/G-SSAZG 9d 484 7 BIGeL 7-25 1996 Apr 26Philips Semiconductors Product specification Voltage regulator diodes BZV55 series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rin j-tp thermal resistance from junction to tie-point 300 1 KAW Rin j-a thermal resistance from junction to ambient | see Fig.2 and note 1 380 KAW Note 1. Device mounted on a ceramic substrate of 10 x 10 x 0.6 mm. GRAPHICAL DATA TLE Ape] oe 10-1 1 10 10? 108 104 ty (ms) 108 Fig.2 Thermal resistance from junction to ambient as a function of pulse duration. 1996 Apr 26 7-26Philips Semiconductors Product specification Voltage regulator diodes BZV55 series 1 03 MBG787 PZsM ) 102 10 1 1071 1 duration (ms) 10 (1) T)=25 C (prior to surge). (2) T= 150 C (prior to surge). Fig.3 Maximum permissible non-repetitive peak reverse power dissipation versus duration. 0.6 0.8 VE (V) 1.0 Tj +25 C. Fig.4 Forward current as a function of forward voltage; typical values. 0 Sz (mvm) -1 -2 -3 0 20 40 Iz (mA) 60 BZV55-B/F/C2V4 to B/F/C4V3. T, = 25 to 150C. Fig.56 Temperature coefficient as a function of working current; typical values. 16 20 tz (mA) BZV55-B/FICAV7 to B/F/C12. T) = 25 to 150C. Fig.6 Temperature coefficient as a function of working current; typical values. 1996 Apr 26