-- IRF 540,541 POWER: MOS [Fe I | peaet2ce FIELD EFFECT POWER TRANSISTOR | _ u'tovors RDS(ON) = 0.085 0 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology N-CHANNEL to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power = supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear CASE STYLE T0O-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) transfer characteristics makes it well suited for many linear Rane te ea te .055(1,38 applications such as audio amplifiers and servo motors. Pot ar " Features 2D az 1 remeGSSrune e Polysilicon gate Improved stability and reliability wae. + ssa eee No secondary breakdown Excellent ruggedness meee | j . 22066 581 Ultra-fast switching Independent of temperature OT a rape sor e Voltage controlled High transconductance ee ie .600(12.71MIN. Low input capacitance Reduced drive requirement TERM3 fae | e Excellent thermal stability Ease of paralleling ace ae ae tt ar shat E ee BOSE UNIT TYPE |TERM.WUTERM.2| TERMS TAB POWER MOS FET/TO-220-AB] GATE |DRAIN| SOURCE} ORAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF540/D84EL2 IRF541/D84EK2 UNITS Drain-Source Voltage Vpss 100 60 Volts Drain-Gate Voltage, Ras = 1MO Voar 100 60 Volts Continuous Drain Current @ To = 25C Ip 27 27 A To = 100C 17 17 A Pulsed Drain Current lpm 108 108 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ To = 25C Pp 125 125 Watts Derate Above 25C 1.0 1.0 Ww/C Operating and Storage Junction Temperature Range Ty, TstG -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rec 1.00 1.00 C/W Thermal Resistance, Junction to Ambient Resa 80 80 C/W Maximum Lead Temperature for Soldering Purposes: %" from Case for 5 Seconds Teh 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 185 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN TYP MAX UNIT | off characteristics Drain-Source Breakdown Voltage IRF540/D84EL2 BVpss 100 _ _- Volts (Vas = OV, Ip = 250 uA) IRF541/D84EK2 60 ~~ _ Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, Vag = OV, Tg = 25C) 250 HA (Vps = Max Rating, 0.8, V@g = OV, To = 125C) _ _ 1000 Gate-Source Leakage Current (Vag = 20V) lass _ - +500 nA on characteristics Gate Threshold Voltage To = 25C | Vas(tH) 2.0 _ 4.0 Voits (Vos = Vas; Ip,= 250 uA) On-State Drain Current (V@g = 10V, Vp = 10V) ID(ON) 27 A Static Drain-Source On-State Resistance (Vas = 10V, Ip = 15A) Rps(ON) 0.073 0.085 Ohms Forward Transconductance (Vpg = 10V, Ip = 15A) Ofs 5.4 7.0 _ mhos dynamic characteristics Input Capacitance Vas = OV Ciss _ 1400 1600 pF Output Capacitance Vos = 25V Coss _ 550 800 pF Reverse Transfer Capacitance f= 1MHz Crss _ 120 300 pF switching characteristics Turn-on Delay Time Vos = 30V td(on) _ 20 _ ns Rise Time Ip = 15A, Vag = 15V tr 115 _ ns Turn-off Delay Time Roen = 500, Res = 12.59 | taoff) 50 _ ns Fall Time (Ras (EQuIV.) = 102) t - 30 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 27 A Pulsed Source Current Ism _ 108 A Diode Forward Voltage _ (To = 25C, Vag = OV, Ig = 27A) Vsp 1.2 2.5 Volts Reverse Recovery Time try _ 250 _ ns (Ig = 27A, dig/dt = 100A/usec, To = 125C) QrrA _ 2.0 _ uC *Pulse Test: Pulse width < 300 ws, duty cycle = 2% 1000 600 400 200 80 60 40 7 Ip, DRAIN CURRENT (AMPERES) 6 OPERATION IN THIS AREA 4} MAY BE LIMITED BY R | | SINGLE PULSE To = 25C IRF541/D84EK2 1 2 4 6 810 20 40 6080100 200 400 600 1000 Vpg, ORAINSOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 186 Roston) AND Vest) NORMALIZED 40 TYPICAL NORMALIZED Rogion; AND Vastu) VS. T CONDITIONS: Rpg(on) CONDITIONS: tp = 15 A, Vag = 10V V@g(tH) CONDITIONS: Ip = 250uA, Vog = Vag 0 40 80 T,, JUNCTION TEMPERATURE (C) 120 160 EMP.