SUD40N04-10A
Vishay Siliconix
New Product
Document Number: 71420
S-03269—Rev. A, 26-Mar-01 www.vishay.com
1
N-Channel 40-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) rDS(on) (W) ID (A)a
0.010 @ V GS = 10 V 40
40 0.014 @ VGS = 4.5 V 40
D
G
S
TO-252
SGD
Top View
Drain Connected to Tab
Order Number:
SUD40N04-10A N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 40
Gate-Source Voltage VGS 20 V
_TC = 25_C 40a
Continuous Drain Current (TJ = 175_C) TC = 100_CID40a
Pulsed Drain Current IDM 100 A
Avalanche Current IAR 30
Repetitive A valanche EnergybL = 0.1 mH EAR 45 mJ
Power Dissipation TC = 25_C PD71cW
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t 10 sec. 15 18
Junction-to-AmbientdSteady State RthJA 40 50 _C/W
Junction-to-Case RthJC 1.75 2.1
C/W
Notes:
a. Package limited.
b. Duty cycle 1%.
c. See SOA curve for voltage derating.
d. Surface mounted on 1” FR4 board.
SUD40N04-10A
Vishay Siliconix New Product
www.vishay.com
2 Document Number: 71420
S-03269—Rev. A, 26-Mar-01
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40
Gate Threshold Voltage VGS(th) VDS = VGS, IDS = 250 mA1 3 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V 100 nA
VDS = 32 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS VDS = 32 V, VGS = 0 V, TJ = 125_C 50 mA
DSS VDS = 32 V, VGS = 0 V, TJ = 175_C 150
m
On-State Drain CurrentaID(on) VDS = 5 V, VGS = 10 V 40 A
VGS = 10 V, ID = 40 A 0.0075 0.010
VGS = 10 V, ID = 40 A, TJ = 125_C 0.012 0.016
VGS = 10 V, ID = 40 A, TJ = 175_C 0.015 0.020
W
Drain-Source On-State ResistancearDS(on) VGS = 4.5 V, ID = 10 A 0.011 0.014 W
VGS = 4.5 V, ID = 10 A, TJ = 125_C 0.018 0.022
VGS = 4.5 V, ID = 10 A, TJ = 175_C 0.022 0.028
Forward Transconductanceagfs VDS = 15 V, ID = 40 A 20 40 S
Dynamicb
Input Capacitance Ciss 1700
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 370 pF
Reversen Transfer Capacitance Crss 145
Total Gate ChargecQg35
Gate-Source ChargecQgs VDS = 20 V, VGS = 10 V, ID = 40 A 6nC
Gate-Drain ChargecQgd
DS GS D8
Turn-On Delay Timectd(on) 14 30
Rise TimectrVDD = 20 V, RL = 0.5 W7.5 15
Turn-Off Delay Timectd(off)
VDD = 20 V, RL = 0.5
W
ID 40 A, VGEN = 10 V, RG = 2.5 W30 60 ns
Fall Timectf
DGEN G
14 30
Source-Drain Ciode Ratings and Characteristics (TC = 25_C)b
Continuous Current Is40
Pulsed Current ISM 100 A
Forward VoltageaVSD IF = 40 A, VGS = 0 V 1.0 1.50 V
Reverse Recovery Time trr IF = 40 A, di/dt = 100 A/ms 30 60 ns
Notes:
a. Pulse test; pulse width 300 ms, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
SUD40N04-10A
Vishay Siliconix
New Product
Document Number: 71420
S-03269—Rev. A, 26-Mar-01 www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
30
60
90
120
0246810
0
500
1000
1500
2000
2500
3000
0 8 16 24 32 40
0
20
40
60
80
0 20406080100
0
4
8
12
16
20
0 102030405060
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0 20406080100
0
20
40
60
80
100
0123456
Output Characteristics Transfer Characteristics
Capacitance Gate Charge
Transconductance On-Resistance vs. Drain Current
VDS – Drain-to-Source Voltage (V)
– Drain Current (A)ID
VGS – Gate-to-Source Voltage (V)
– Drain Current (A)ID
– Gate-to-Source Voltage (V) – On-Resistance (
Qg – Total Gate Charge (nC)
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
C – Capacitance (pF)
rDS(on) Ω)VGS
VGS – Gate-to-Source Voltage (V)
– Transconductance (S)gfs
25_C–55_C
3 V
TC = 125_C
VGS = 20 V
ID = 40 A
VGS = 10 thru 6 V
5 V
VGS = 10 V
Ciss
Coss
Crss
TC = –55_C
25_C
125_C
4 V
VGS = 4.5 V
3 V
SUD40N04-10A
Vishay Siliconix New Product
www.vishay.com
4 Document Number: 71420
S-03269—Rev. A, 26-Mar-01
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
(Normalized)
– On-Resistance (rDS(on) Ω)
0.0
0.5
1.0
1.5
2.0
2.5
–50 –25 0 25 50 75 100 125 150 175
On-Resistance vs. Junction Temperature Source-Drain Diode Forward V oltage
TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V)
– Source Current (A)IS
100
10
10.3 0.6 0.9 1.2 1.5
VGS = 10 V
ID = 30 A
TJ = 25_C
TJ = 150_C
0
THERMAL RATINGS
TC = 25_C
Single Pulse
0
10
20
30
40
50
0 25 50 75 100 125 150 175
Safe Operating Area
VDS – Drain-to-Source Voltage (V)
– Drain Current (A)ID
1000
10
0.1 1 10 100
Limited
by rDS(on)
0.1
100
Maximum A valanche and Drain Current
vs. Case Temperature
TC – Ambient Temperature (_C)
– Drain Current (A)ID
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10–410–310–210–1100
Normalized Ef fective Transient
Thermal Impedance
600
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1
1 ms
10 ms
100 ms
dc
10 ms
100 ms
101
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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