LM6152, LM6154
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SNOS752D –MAY 1999–REVISED MARCH 2013
LM6152/LM6154 Dual and Quad 75 MHz GBW Rail-to-Rail I/O Operational Amplifiers
Check for Samples: LM6152,LM6154
1FEATURES DESCRIPTION
Using patented circuit topologies, the
2• At VS= 5V, typical unless noted. LM6152/LM6154 provides new levels of speed vs.
• Greater than rail-to-rail input CMVR −0.25V to power performance in applications where low voltage
5.25V supplies or power limitations previously made
• Rail-to-rail output swing 0.01V to 4.99V compromise necessary. With only 1.4 mA/amplifier
supply current, the 75 MHz gain bandwidth of this
• Wide gain-bandwidth 75 MHz @ 100 kHz device supports new portable applications where
• Slew rate higher power devices unacceptably drain battery life.
– Small signal 5 V/µs The slew rate of the devices increases with
increasing input differential voltage, thus allowing the
– Large signal 45 V/µs device to handle capacitive loads while maintaining
• Low supply current 1.4 mA/amplifier large signal amplitude.
• Wide supply range 2.7V to 24V The LM6152/LM6154 can be driven by voltages that
• Fast settling time of 1.1 µs for 2V step (to exceed both power supply rails, thus eliminating
0.01%) concerns about exceeding the common-mode voltage
• PSRR 91 dB range. The rail-to-rail output swing capability provides
the maximum possible dynamic range at the output.
• CMRR 84 dB This is particularly important when operating on low
supply voltages.
APPLICATIONS Operating on supplies from 2.7V to over 24V, the
• Portable high speed instrumentation LM6152/LM6154 is excellent for a very wide range of
• Signal conditioning amplifier/ADC buffers applications, from battery operated systems with
large bandwidth requirements to high speed
• Barcode scanners instrumentation.
Connection Diagrams
Top View Top View
Figure 1. 8-Pin SOIC Package Figure 2. 14-Pin SOIC Package
See Package Number D0008A See Package Number D0014A
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 1999–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
LM6152, LM6154
SNOS752D –MAY 1999–REVISED MARCH 2013
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Absolute Maximum Ratings (1)(2)
ESD Tolerance (3) 2500V
Differential Input Voltage 15V
Voltage at Input/Output Pin (V+) + 0.3V, (V−)−0.3V
Supply Voltage (V+−V−) 35V
Current at Input Pin ±10 mA
Current at Output Pin (4) ±25 mA
Current at Power Supply Pin 50 mA
Lead Temperature (soldering, 10 sec) 260°C
Storage Temperature Range -65°C to +150°C
Junction Temperature (5) 150°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) Human body model is 1.5 kΩin series with 100 pF.
(4) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
(5) The maximum power dissipation is a function of TJ(MAX) ,θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD= (TJ(MAX)–T A)/θJA. All numbers apply for packages soldered directly into a PC board.
Operating Ratings (1)
Supply Voltage 2.7V ≤V+≤24V
Junction Temperature Range LM6152,LM6154 0°C ≤TJ≤+ 70°C
Thermal Resistance (θJA) 8-pin SOIC 193°C/W
14-pin SOIC 126°C/W
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics.
5.0V DC Electrical Characteristics
Unless otherwise specified, all limits are ensured for TJ= 25°C, V+= 5.0V, V−= 0V, VCM = VO= V+/2 and RL> 1 MΩto V+/2.
Boldface limits apply at the temperature extremes. LM6152AC LM6154BC
Parameter Test Conditions Typ (1) Limit (2) LM6152BC Units
Limit (2)
VOS Input Offset Voltage 0.54 2 5 mV
4 7 max
TCVOS Input Offset Voltage Average Drift 10 µV/°C
IBInput Bias Current 0V ≤VCM ≤5V 500 980 980 nA max
750 1500 1500
IOS Input Offset Current 32 100 100 nA max
40 160 160
RIN Input Resistance, CM 0V ≤VCM ≤4V 30 MΩ
CMRR Common Mode Rejection Ratio 0V ≤VCM ≤4V 94 70 70 dB
min
0V ≤VCM ≤5V 84 60 60
PSRR Power Supply Rejection Ratio 5V ≤V+≤24V 91 80 80 dB
min
VCM Input Common-Mode Voltage Range Low −0.25 0 0 V
High 5.25 5.0 5.0 V
AVLarge Signal Voltage Gain RL= 10 kΩ214 50 50 V/mV
min
(1) Typical Values represent the most likely parametric norm.
(2) All limits are specified by testing or statistical analysis.
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5.0V DC Electrical Characteristics (continued)
Unless otherwise specified, all limits are ensured for TJ= 25°C, V+= 5.0V, V−= 0V, VCM = VO= V+/2 and RL> 1 MΩto V+/2.
Boldface limits apply at the temperature extremes. LM6152AC LM6154BC
Parameter Test Conditions Typ (1) Limit (2) LM6152BC Units
Limit (2)
VOOutput Swing RL= 100 kΩ0.006 0.02 0.02 V
0.03 0.03 max
4.992 4.97 4.97 V
4.96 4.96 min
RL= 2 kΩ0.04 0.10 0.10 V
0.12 0.12 max
4.89 4.80 4.80 V
4.70 4.70 min
ISC Output Short Circuit Current Sourcing 6.2 3 3 mA
2.5 2.5 min
27 27 mA
17 17 max
Sinking 16.9 7 7 mA
5 5 min
mA
40 40 max
ISSupply Current Per Amplifier 1.4 2 2 mA
2.25 2.25 max
5.0V AC Electrical Characteristics
Unless otherwise specified, all limits ensured for TJ= 25°C, V+= 5.0V, V−= 0V, VCM = VO= V+/2 and RL> 1 MΩto V+/2.
Boldface limits apply at the temperature extremes. LM6152AC LM6154BC
Parameter Test Conditions Typ (1) Limit (2) LM6152BC Units
Limit (2)
SR Slew Rate ±4V Step @ VS= ±6V, 30 24 24 V/µs
RS< 1 kΩ15 15 min
GBW Gain-Bandwidth Product f = 100 kHz 75 MHz
Amp-to-Amp Isolation RL= 10 kΩ125 dB
enInput-Referred Voltage Noise f = 1 kHz 9 nV/√Hz
inInput-Referred Current Noise f = 1 kHz 0.34 pA/√Hz
T.H.D Total Harmonic Distortion f = 100 kHz, RL= 10 kΩ −65 dBc
AV=−1, VO= 2.5 VPP
ts Settling Time 2V Step to 0.01% 1.1 µs
(1) Typical Values represent the most likely parametric norm.
(2) All limits are specified by testing or statistical analysis.
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2.7V DC Electrical Characteristics
Unless otherwise specified, all limits are ensured for TJ= 25°C, V+= 2.7V, V−= 0V, VCM = VO= V+/2 and RL> 1 MΩto V+/2.
Boldface limits apply at the temperature extremes. LM6152AC LM6154BC
Parameter Test Conditions Typ (1) Limit (2) LM6152BC Units
Limit (2)
VOS Input Offset Voltage 0.8 2 5 mV
5 8 max
TCVOS Input Offset Voltage Average Drift 10 µV/°C
IBInput Bias Current 500 nA
IOS Input Offset Current 50 nA
RIN Input Resistance, CM 0V ≤VCM ≤1.8V 30 MΩ
CMRR Common Mode Rejection Ratio 0V ≤VCM ≤1.8V 88 dB
0V ≤VCM ≤2.7V 78
PSRR Power Supply Rejection Ratio 3V ≤V+≤5V 69 dB
VCM Input Common-Mode Voltage Range Low −0.25 0 0 V
High 2.95 2.7 2.7 V
AVLarge Signal Voltage Gain RL= 10 kΩ5.5 V/mV
VOOutput Swing RL= 10 kΩ0.032 0.07 0.07 V
0.11 0.11 max
2.68 2.64 2.64 V
2.62 2.62 min
ISSupply Current Per Amplifier 1.35 mA
(1) Typical Values represent the most likely parametric norm.
(2) All limits are specified by testing or statistical analysis.
2.7V AC Electrical Characteristics
Unless otherwise specified, all limits are ensured for TJ= 25°C, V+= 2.7V, V−= 0V, VCM = VO= V+/2 and RL> 1 MΩto V+/2.
Boldface limits apply at the temperature extremes. LM6152AC LM6154BC
Parameter Test Conditions Typ (1) Limit (2) LM6152BC Units
Limit (2)
GBW Gain-Bandwidth Product f = 100 kHz 80 MHz
(1) Typical Values represent the most likely parametric norm.
(2) All limits are specified by testing or statistical analysis.
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24V DC Electrical Characteristics
Unless otherwise specified, all limits are ensured for TJ= 25°C, V+= 24V, V−= 0V, VCM = VO= V+/2 and RL> 1 MΩto V+/2.
Boldface limits apply at the temperature extremes. LM6152AC LM6154BC
Parameter Test Conditions Typ (1) Limit (2) LM6152BC Units
Limit (2)
VOS Input Offset Voltage 0.3 2 7 mV
4 9 max
TCVOS Input Offset Voltage Average Drift 10 µV/°C
IBInput Bias Current 500 nA
IOS Input Offset Current 32 nA
RIN Input Resistance, CM 0V ≤VCM ≤23V 60 Meg Ω
CMRR Common Mode Rejection Ratio 0V ≤VCM ≤23V 94 dB
0V ≤VCM ≤24V 84
PSRR Power Supply Rejection Ratio 0V ≤VCM ≤24V 95 dB
VCM Input Common-Mode Voltage Range Low −0.25 0 0 V
High 24.25 24 24 V
AVLarge Signal Voltage Gain RL= 10 kΩ55 V/mV
VOOutput Swing RL= 10 kΩ0.044 0.075 0.075 V
0.090 0.090 max
23.91 23.8 23.8 V
23.7 23.7 min
ISSupply Current Per Amplifier 1.6 2.25 2.25 mA
2.50 2.50 max
(1) Typical Values represent the most likely parametric norm.
(2) All limits are specified by testing or statistical analysis.
24V AC Electrical Characteristics
Unless otherwise specified, all limits are ensured for TJ= 25°C, V+= 24V, V−= 0V, VCM = VO= V+/2 and RL> 1 MΩto V+/2.
Boldface limits apply at the temperature extremes. LM6152AC LM6154BC
Parameter Test Conditions Typ (1) Limit (2) LM6152BC Units
Limit (2)
GBW Gain-Bandwidth Product f = 100 kHz 80 MHz
(1) Typical Values represent the most likely parametric norm.
(2) All limits are specified by testing or statistical analysis.
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Typical Performance Characteristics
Supply Current vs. Supply Voltage Offset Voltage vs. Supply voltage
Figure 3. Figure 4.
Bias Current vs. Supply voltage Bias Current vs. VCM
Figure 5. Figure 6.
Bias Current vs. VCM Bias Current vs. VCM
Figure 7. Figure 8.
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Typical Performance Characteristics (continued)
Output Voltage vs. Source Current Output Voltage vs. Source Current
Figure 9. Figure 10.
Output Voltage vs. Source Current Output Voltage vs. Sink Current
Figure 11. Figure 12.
Output Voltage vs. Sink Current Output Voltage vs. Sink Current
Figure 13. Figure 14.
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Typical Performance Characteristics (continued)
Crosstalk (dB) vs. Frequency GBWP (@ 100 kHz) vs. Supply Voltage
Figure 15. Figure 16.
Unity Gain Frequency vs. Supply Voltage
for Various Loads CMRR
Figure 17. Figure 18.
Voltage Swing vs. Frequency
(CL= 100 pF) PSRR vs. Frequency
Figure 19. Figure 20.
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Typical Performance Characteristics (continued)
Open Loop Gain/Phase Open Loop Gain/Phase
(VS= 5V) (VS= 10V)
Figure 21. Figure 22.
Open Loop Gain/Phase
(VS= 24V) Noise Voltage vs. Frequency
Figure 23. Figure 24.
Noise Current vs. Frequency Voltage Error vs. Settle Time
Figure 25. Figure 26.
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100k 1M
FREQUENCY (Hz)
-100
-90
-70
-60
-50
-40
-20
-10
0
HD (dBc)
-30
-80
HD2
HD3
THD
VS = ±5V
AV = -1
VIN = 5 VPP
RL = 10 k:
LM6152, LM6154
SNOS752D –MAY 1999–REVISED MARCH 2013
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Typical Performance Characteristics (continued)
Distortion vs. Frequency
Figure 27.
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APPLICATION INFORMATION
The LM6152/LM6154 is ideally suited for operation with about 10 kΩ(Feedback Resistor, RF) between the output
and the negative input terminal.
With RFset to this value, for most applications requiring a close loop gain of 10 or less, an additional small
compensation capacitor (CF) (see Figure 28) is recommended across RFin order to achieve a reasonable
overshoot (10%) at the output by compensating for stray capacitance across the inputs.
The optimum value for CFcan best be established experimentally with a trimmer cap in place since its value is
dependant on the supply voltage, output driving load, and the operating gain. Below, some typical values used in
an inverting configuration and driving a 10 kΩload have been tabulated for reference:
Table 1. Typical BW (−3 dB) at Various
Supply Voltage and Gains
VSCFBW (−3 dB)
Gain
Volts pF MHz
−1 5.6 4
3−10 6.8 1.97
−100 None 0.797
−1 2.2 6.6
24 −10 4.7 2.2
−100 None 0.962
In the non-inverting configuration, the LM6152/LM6154 can be used for closed loop gains of +2 and above. In
this case, also, the compensation capacitor (CF) is recommended across RF(= 10 kΩ) for gains of 10 or less.
Figure 28. Typical Inverting Gain Circuit AV=−1
Because of the unique structure of this amplifier, when used at low closed loop gains, the realizable BW will be
much less than the GBW product would suggest.
The LM6152/LM6154 brings a new level of ease of use to op amp system design.
The greater than rail-to-rail input voltage range eliminates concern over exceeding the common-mode voltage
range. The rail-to-rail output swing provides the maximum possible dynamic range at the output. This is
particularly important when operating on low supply voltages.
The high gain-bandwidth with low supply current opens new battery powered applications where higher power
consumption previously reduced battery life to unacceptable levels.
The ability to drive large capacitive loads without oscillating functional removes this common problem.
To take advantage of these features, some ideas should be kept in mind.
The LM6152/LM6154, capacitive loads do not lead to oscillations, in all but the most extreme conditions, but they
will result in reduced bandwidth. They also cause increased settling time.
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Unlike most bipolar op amps, the unique phase reversal prevention/speed-up circuit in the input stage, causes
the slew rate to be very much a function of the input pulse amplitude. This results in a 10 to 1 increase in slew
rate when the differential input signal increases. Large fast pulses will raise the slew-rate to more than 30 V/µs.
Figure 29. Slew Rate vs. VDIFF
The speed-up action adds stability to the system when driving large capacitive loads.
A conventional op amp exhibits a fixed maximum slew-rate even though the differential input voltage rises due to
the lagging output voltage. In the LM6152/LM6154, increasing lag causes the differential input voltage to
increase but as it does, the increased slew-rate keeps the output following the input much better. This effectively
reduces phase lag. As a result, the LM6152/LM6154 can drive capacitive loads as large as 470 pF at gain of 2
and above, and not oscillate.
Capacitive loads decrease the phase margin of all op amps. This can lead to overshoot, ringing and oscillation.
This is caused by the output resistance of the amplifier and the load capacitance forming an R-C phase shift
network. The LM6152/6154 senses this phase shift and partly compensates for this effect.
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REVISION HISTORY
Changes from Revision C (March 2013) to Revision D Page
• Changed layout of National Data Sheet to TI format .......................................................................................................... 12
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PACKAGE OPTION ADDENDUM
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Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
LM6152ACM NRND SOIC D 8 95 TBD Call TI Call TI 0 to 70 LM61
52ACM
LM6152ACM/NOPB ACTIVE SOIC D 8 95 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM61
52ACM
LM6152ACMX NRND SOIC D 8 2500 TBD Call TI Call TI 0 to 70 LM61
52ACM
LM6152ACMX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM61
52ACM
LM6152BCM/NOPB ACTIVE SOIC D 8 95 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM61
52BCM
LM6152BCMX NRND SOIC D 8 2500 TBD Call TI Call TI 0 to 70 LM61
52BCM
LM6152BCMX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM61
52BCM
LM6154BCM NRND SOIC D 14 55 TBD Call TI Call TI 0 to 70 LM6154BCM
LM6154BCM/NOPB ACTIVE SOIC D 14 55 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM6154BCM
LM6154BCMX/NOPB ACTIVE SOIC D 14 2500 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM6154BCM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
PACKAGE OPTION ADDENDUM
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Addendum-Page 2
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
LM6152ACMX SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM6152ACMX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM6152BCMX SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM6152BCMX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM6154BCMX/NOPB SOIC D 14 2500 330.0 16.4 6.5 9.35 2.3 8.0 16.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 23-Sep-2013
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LM6152ACMX SOIC D 8 2500 367.0 367.0 35.0
LM6152ACMX/NOPB SOIC D 8 2500 367.0 367.0 35.0
LM6152BCMX SOIC D 8 2500 367.0 367.0 35.0
LM6152BCMX/NOPB SOIC D 8 2500 367.0 367.0 35.0
LM6154BCMX/NOPB SOIC D 14 2500 367.0 367.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 23-Sep-2013
Pack Materials-Page 2
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TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.
Products Applications
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Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications
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DLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps
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Interface interface.ti.com Medical www.ti.com/medical
Logic logic.ti.com Security www.ti.com/security
Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense
Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video
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OMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.com
Wireless Connectivity www.ti.com/wirelessconnectivity
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