DSS25-0025B Schottky Diode V RRM = I FAV = VF = High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 25 V 25 A 0.45 V Part number DSS25-0025B 3 1 Backside: cathode Features / Advantages: Applications: Package: Very low Vf Extremely low switching losses low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Housing: TO-220 Symbol Definition Conditions VRRM max. repetitive reverse voltage IR reverse current VF Ratings forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance rIndustry standard outline rEpoxy meets UL 94V-0 rRoHS compliant min. typ. Unit max. 25 VR = 25 V TVJ = 25 C TVJ = 25 C 20 mA VR = 25 V TVJ = 100 C 80 mA IF = 25 A TVJ = 25 C 0.52 V 0.67 V 0.45 V IF = 50 A IF = 25 A IF = 50 A rectangular, d = 0.5 for power loss calculation only TVJ = 125 C V 0.66 V TC = 125C 25 A TVJ = 150C 0.21 V 8.8 1.40 m K/W 150 C R thJC thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation TC = 25 C 90 W I FSM max. forward surge current t = 10 ms (50 Hz), sine TVJ = 45C 330 A EAS non-repetitive avalanche energy I AS = TVJ = 25 C 20 mJ I AR repetitive avalanche current VA = 1.5*VR typ.; f = 10 kHz 2 A IXYS reserves the right to change limits, conditions and dimensions. (c) 2007 IXYS all rights reserved -55 20 A; L = 100 H Data according to IEC 60747and per diode unless otherwise specified 20071001b DSS25-0025B Ratings Symbol Definition min. Conditions I RMS RMS current RthCH thermal resistance case to heatsink Tstg storage temperature per pin max. Unit 35 0.50 -55 Weight A K/W 150 C 2 MD mounting torque FC mounting force with clip 1) typ. 1) 0.4 20 g 0.8 60 Nm N IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Marking on product Logo DateCode Assembly Code Ordering Standard abcdef YYWW XXXXXX Part Name DSS25-0025B IXYS reserves the right to change limits, conditions and dimensions. Marking on Product DSS25-0025B Delivering Mode Tube Base Qty Code Key 50 475114 * Data according to IEC 60747and per diode unless otherwise specified (c) 2007 IXYS all rights reserved http://store.iiic.cc/ 20071001b DSS25-0025B Outlines TO-220 IXYS reserves the right to change limits, conditions and dimensions. * Data according to IEC 60747and per diode unless otherwise specified (c) 2007 IXYS all rights reserved http://store.iiic.cc/ 20071001b DSS25-0025B 100 10000 1000 A mA TVJ=150C pF IR 100 125C IF CT 100C 10 10 1000 75C 1 TVJ = 150C 125C 25C 50C 0.1 25C 1 0.0 0.2 0.6 V 0.4 0 5 10 15 20 V 25 VR VF Fig. 1 Maximum forward voltage drop characteristics Fig. 2 Typ. value of reverse current IR vs. reverse voltage VR 40 20 A W P(AV) TVJ= 25C 100 0.01 0 5 10 15 20 V 25 VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 15 30 IF(AV) d=0.5 DC 20 10 10 5 d= DC 0.5 0.33 0.25 0.17 0.08 0 0 0 40 80 120 C 160 0 10 20 IF(AV) TC Fig. 4 Avg. forward current IF(AV) vs. case temperature TC 30 A Fig. 5 Forward power loss characteristics 2 1 D=0.5 K/W ZthJC 0.33 0.25 0.17 Single Pulse 0.08 0.1 Note: All curves are per diode DSS 25-0025B 0.01 0.0001 0.001 0.01 0.1 s 1 10 t Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. * Data according to IEC 60747and per diode unless otherwise specified (c) 2007 IXYS all rights reserved http://store.iiic.cc/ 20071001b