N-Channel QFET(R) MOSFET 600 V, 1.9 A, 4.7 Description Features This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. * 1.9 A, 600 V, RDS(on) = 4.7 (Max.) @ VGS = 10 V, ID = 0.95 A * Low Gate Charge (Typ. 8.5 nC) * Low Crss (Typ. 4.3 pF) * 100% Avalanche Tested * RoHS Compliant D D G S D-PAK G I-PAK D G S S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current IDM Drain Current FQD2N60CTM / FQU2N60CTU 600 Unit V 1.9 A - Continuous (TC = 100C) 1.14 A - Pulsed 7.6 A (Note 1) VGSS Gate-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ IAR Avalanche Current (Note 1) 1.9 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C)* (Note 1) 4.4 4.5 2.5 mJ V/ns W 44 0.35 -55 to +150 W W/C C 300 C dv/dt PD TJ, TSTG TL (Note 3) Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient (minimum pad of 2 oz copper), Max. Thermal Resistance, Junction-to-Ambient (* 1 in2 pad of 2 oz copper), Max. (c)2003 Semiconductor Components Industries, LLC. October-2017,Rev.2 FQD2N60CTM / FQU2N60CTU 2.87 110 Unit C/W 50 Publication Order Number: FQU2N60C/D FQD2N60C / FQU2N60C -- N-Channel QFET(R) MOSFET FQD2N60C / FQU2N60C Device Marking FQD2N60C Device FQD2N60CTM Package D-PAK Reel Size 330 mm Tape Width 16 mm Quantity 2500 units FQU2N60C FQU2N60CTU I-PAK Tube N/A 70 units Electrical Characteristics Symbol TC = 25C unless otherwise noted. Parameter Off Characteristics Test Conditions Min Typ Max Unit 600 -- -- V -- 0.6 -- V/C VDS = 600 V, VGS = 0 V -- -- 1 A VDS = 480 V, TC = 125C --- 10 100 A nA BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V --- IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.95 A -- 3.6 4.7 gFS Forward Transconductance VDS = 40 V, ID = 0.95 A -- 5.0 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 180 235 pF -- 20 25 pF -- 4.3 5.6 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 2 A, RG = 25 (Note 4) VDS = 480 V, ID = 2 A, VGS = 10 V (Note 4) Drain-Source Diode Characteristics and Maximum Ratings -- 9 28 ns -- 25 60 ns -- 24 58 ns -- 28 66 ns -- 8.5 12 nC -- 1.3 -- nC -- 4.1 -- nC IS Maximum Continuous Drain-Source Diode Forward Current -- -- 1.9 A ISM -- -- 7.6 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 1.9 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 230 -- ns Qrr Reverse Recovery Charge -- 1.0 -- C VGS = 0 V, IS = 2 A, dIF / dt = 100 A/s NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 56 mH, IAS = 2 A, VDD = 50 V, RG = 25 , starting TJ = 25C. 3. ISD 2 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature. www.onsemi.com 2 FQD2N60C / FQU2N60C -- N-Channel QFET(R) MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 0 10 ID, Drain Current [A] ID, Drain Current [A] Top : -1 10 o 150 C o -55 C 0 10 o 25 C Notes : 1. 250 s Pulse Test 2. TC = 25 Notes : 1. VDS = 40V 2. 250 s Pulse Test -2 10 -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 10 IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 12 VGS = 10V 8 6 4 VGS = 20V 2 0 10 150 Notes : 1. VGS = 0V 2. 250s Pulse Test 25 Note : TJ = 25 0 -1 0 1 2 3 4 5 10 0.2 0.4 500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 450 Capacitance [pF] 400 350 Ciss 300 Coss 250 200 Notes ; 1. VGS = 0 V 2. f = 1 MHz 150 Crss 100 0.8 1.2 1.4 12 VDS = 120V 10 VDS = 300V 8 VDS = 480V 6 4 2 50 0 -1 10 1.0 Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] Figure 5. Capacitance Characteristics 0.6 VSD, Source-Drain voltage [V] ID, Drain Current [A] Note : ID = 2A 0 10 1 10 0 0 2 4 6 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.onsemi.com 3 8 10 FQD2N60C / FQU2N60C -- N-Channel QFET(R) MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 0.95 A 0.5 0.0 -100 200 -50 o TJ, Junction Temperature [ C] 0 50 100 150 200 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 2.0 Operation in This Area is Limited by R DS(on) 1 1.6 100 s ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 0 10 1.2 10 ms 100 ms DC 0.8 -1 10 Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.4 -2 1 2 10 0.0 25 3 10 10 50 75 100 TC, Case Temperature [] VDS, Drain-Source Voltage [V] Figure 11. Transient Thermal Response Curve Z JC(t), Thermal Response 0 10 ZJC(t), Thermal Response [oC/W] 10 D = 0 .5 10 N o te s : 1 . Z J C (t) = 2 .8 7 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 0 .2 0 .1 0 .0 5 10 PDM 0 .0 2 0 .0 1 -1 t1 t2 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] www.onsemi.com 4 10 0 10 1 125 150 FQD2N60C / FQU2N60C -- N-Channel QFET(R) MOSFET Typical Performance Characteristics (Continued) FQD2N60C / FQU2N60C -- N-Channel QFET(R) MOSFET Figure 12. Gate Charge Test Circuit & Waveform 50K 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD DUT ID (t) VDS (t) VDD tp tp www.onsemi.com 5 Time DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop www.onsemi.com 6 VDD FQD2N60C / FQU2N60C -- N-Channel QFET(R) MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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