MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A
1
May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
Data
Sheet
General Description
The AP3015/A are Pulse Frequency Modulation
(PFM) DC/DC converters. These two devices are func-
tionally equivalent except the switching current limit.
The AP3015 is designed for higher power systems
with 350mA current limit, and the AP3015A is for
lower power systems with 100mA current limit.
The AP3015/A feature a wide input voltage. The oper-
ation voltage is ranged from 1.2Vto 12V (1V to 12V
for AP3015A). A current limited, fixed off-time con-
trol scheme conserves operating current, resulting in
high efficiency over a broad range of load current.
They also feature low quiescent current, switching cur-
rent limiting, low temperature coefficient, etc.
Fewer tiny external components are required in the
applications to save space and lower cost.
Furthermore, to ease its use in differnet systems, a dis-
able terminal is designed to turn on or turn off the chip.
The AP3015/A are available in SOT-23-5 package.
Features
·Low Quiescent Current
In Active Mode (Not Switching): 17µA Typical
In Shutdown Mode: <1µA
·Low Operating VIN
1.2V Typical for AP3015
1.0V Typical for AP3015A
·Low VCESAT Switch
200mV Typical at 300mA for AP3015
70mV Typical at 70mA for AP3015A
·High Output Voltage: up to 34V
·Fixed Off-Time Control
·Switching Current Limiting
350mA Typical for AP3015
100mA Typical for AP3015A
·Operating Temperature Range: -40oC to 85oC
Applications
·MP3, MP4
·Battery Power Supply System
·LCD/OLED Bias Supply
·Handheld Device
·Portable Communication Device
Figure 1. Package Type of AP3015/A
SOT-23-5
MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A
2
May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
Data
Sheet
Figure 2. Pin Configuration of AP3015/A (Top View)
Pin Description
Pin Number Pin Name Function
1 SW Switch Pin. This is the collector of the internal NPN power switch. Minimize the trace area
connected to this Pin to minimize EMI
2 GND Ground Pin. GND should be tied directly to ground plane for best performance
3 FB Feedback Pin. Set the output voltage through this pin. The formula is VOUT=1.23V*(1+R1/
R2). Keep the loop between Vout and FB as short as possible to minimize the ripple and noise,
which is beneficial to the stability and output ripple
4 SHDN Shutdown Control Pin. Tie this pin above 0.9V to enable the device. Tie below 0.25V to turn
off the device
5V
IN Supply Input Pin. Bypass this pin with a capacitor as close to the device as possible
Pin Configuration
K Package
(SOT-23-5)
SW
FB
VIN
SHDN
GND
1
2
34
5
MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A
3
May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
Data
Sheet
SHDN
VIN
Ordering Information
Functional Block Diagram
FB
GND
SW
Q1
3
5
4
2
1
DRIVER
400nS
ONE SHOT
Bandgap
CURRENT-LIMIT
REFERENCE
CURRENT-LIMIT
COMPARATOR
RESET
VREF
FEEDBACK
COMPARATOR
ENABLE
Figure 3. Functional Block Diagram of AP3015/A
Package Temperature
Range
Part Number Marking ID Packing Type
Lead Free Green Lead Free Green
SOT-23-5 -40 to 85oC
AP3015KTR-E1 AP3015KTR-G1 E6E G6E Tape & Reel
AP3015AKTR-E1 AP3015AKTR-G1 E6F G6F Tape & Reel
Circuit Type
Package
G1: Green
AP3015
TR: Tape and Reel
K: SOT-23-5
-
Blank: AP3015
A: AP3015A
E1: Lead Free
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green package.
MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A
4
May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
Data
Sheet
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max-
imum Ratings" for extended periods may affect device reliability.
Parameter Symbol Min Max Unit
Input Voltage VIN
AP3105 1.2 12 V
AP3105A 1.0 12
Operating Temperature TA-40 85 oC
Recommended Operating Conditions
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Input Voltage VIN 15 V
SW Voltage VSW 38 V
FB Voltage VFB VIN V
SHDN Pin Voltage VSHDN 15 V
Thermal Resistance (Junction to Ambient, no Heat sink) RθJA 265 oC/W
Operating Junction Temperature TJ150 oC
Storage Temperature Range TSTG -65 to 150 oC
Lead Temperature (Soldering, 10sec) TLEAD 260 oC
ESD (Human Body Model) 3000 V
MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A
5
May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
Data
Sheet
(VIN=VSHDN=1.2V, TA=25oC, unless otherwise specified.)
Parameter Symbol Conditions Min Typ Max Unit
Input Voltage VIN
AP3015 1.2 12 V
AP3015A 1.0 12
Quiescent Current IQ
Not Switching 17 30 µA
VSHDN =0V 1
Feedback Voltage VFB 1.205 1.23 1.255 V
FB Comparator Hysteresis VFBH 8mV
FB Pin Bias Current IFB VFB=1.23V 30 80 nA
Output Voltage Line Regulation LNR 1.2V
<
V
IN
<
12V
0.05 0.1 %/V
Switching Current Limit IL
AP3015 300 350 400 mA
AP3015A 75 100 125
Switch Saturation Voltage VCESAT
AP3015, ISW=300mA 200 300 mV
AP3015A, ISW=70mA 70 120
Switch Off Time TOFF
VFB>1V 400 nS
VFB
<
0.6V 1.5 µS
SHDN Input Threshold High VTH 0.9 V
SHDN Input Threshold Low VTL 0.25
SHDN Pin Current ISHDN
VSHDN =1.2V 2 3 µA
VSHDN =5V 8 12
Switch Leakage Current ISWL Switch Off, VSW=5V 0.01 5 µA
Thermal Resistance
(Junction to Case)
θJC 52 oC/W
Electrical Characteristics
MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A
6
May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
Data
Sheet
Typical Performance Characteristics
Figure 4. Quiescent Current vs. Junction Temperature
Figure 5. Feedback Voltage vs. Junction Temperature
Figure 6. Switch Off Time vs. Junction Temperature Figure 7. Shutdown Pin Current vs. Shutdown Pin Voltage
Unless otherwise noted, VIN=1.2V
-50 -25 0 25 50 75 100
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
18.0
18.5
19.0
19.5
20.0
Quiescent Current (µA)
Junction Temperature (OC)
Quiescent Current, No Switching
VIN=1.2V
VIN=12V
-50 -25 0 25 50 75 100
1.205
1.210
1.215
1.220
1.225
1.230
1.235
1.240
1.245
1.250
1.255
Feedback Voltage (V)
Junction Temperature (OC)
0.0 2.5 5.0 7.5 10.0 12.5 15.0
0
5
10
15
20
25
30
35
40
Shutdown Pin Current (µA)
Shutdown Pin Voltage (V)
TJ=-50OC
TJ=25OC
TJ=100OC
-50 -25 0 25 50 75 100
350
360
370
380
390
400
410
420
430
440
450
Switch Off Time (ns)
Junction Temperature (OC)
VFB>1V, VIN=1.2V
MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A
7
May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
Data
Sheet
Figure 9. Switch Current Limit vs. Junction Temperature
Typical Performance Characteristics (Continued)
Figure 10. Saturation Voltage vs. Junction Temperature Figure 11. Saturation Voltage vs. Junction Temperature
Figure 8. Switch Current Limit vs. Junction Temperature
Unless otherwise noted, VIN=1.2V
-50 -25 0 25 50 75 100
40
44
48
52
56
60
64
68
72
76
80
Saturation Voltage (mV)
Junction Temperature (OC)
AP3015A, ISWITCH=70mA
VIN=1.2V
VIN=12V
-50 -25 0 25 50 75 100
200
250
300
350
400
450
500
Switch Current Limit (mA)
Junction Temperature (OC)
AP3015
VIN=1.2V
VIN=12V
-50 -25 0 25 50 75 100
80
82
84
86
88
90
92
94
96
98
100
102
104
106
108
110
112
114
116
118
120
Switch Current Limit (mA)
Junction Temperature (OC)
AP3015A
VIN=1.2V
VIN=12V
-50 -25 0 25 50 75 100
150
160
170
180
190
200
210
220
230
240
250
Saturation Voltage (mV)
Junction Temperature (OC)
AP3015, ISWITCH=300mA
VIN=1.2V
VIN=12V
MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A
8
May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
Data
Sheet
Figure 13. Efficiency
Typical Performance Characteristics (Continued)
Figure 12. Efficiency
Unless otherwise noted, VIN=1.2V
Application Information
Operating Principles
AP3015/A feature a constant off-time control scheme.
Refer to Figure 3 the bandgap voltage VREF (1.23V
typical) is used to control the output voltage.
When the voltage at the FB pin drops below the lower
hysteresis point of Feedback Comparator (typical
hysteresis is 8mV), the Feedback Comparator enables
the chip and the NPN power switch is turned on, the
current in the inductor begins to ramp up and store
energy in the coil while the load current is supplied by
the output capacitor. Once the current in the inductor
reaches the current limit, the Current-Limit
Comparator resets the 400ns One-Shot which turns off
the NPN switch for 400ns. The SW voltage rises to the
output voltage plus a diode drop and the inductor
current begins to ramp down. During this time the
energy stored in the inductor is transferred to COUT
and the load. After the 400ns off-time, the NPN switch
is turned on and energy will be stored in the inductor
again.
This cycle will continue until the voltage at FB pin
reaches 1.23V, the Feedback Comparator disables the
chip and turns off the NPN switch. The load current is
then supplied solely by output capacitor and the output
voltage will decrease. When the FB pin voltage drops
below the lower hysteresis point of Feedback
Comparator, the Feedback Comparator enables the
device and repeats the cycle described previously.
Under not switching condition, the IQ of the device is
about 17µA.
The AP3015/A contain additional circuitry to provide
protection during start-up or under short-circuit
conditions. When the FB pin voltage is lower than
approximately 0.6V, the switch off-time is increased
to 1.5µs and the current limit is reduced to about
250mA (70mA for AP3015A). This reduces the
average inductor current and helps to minimize the
power dissipation in the AP3015/A power switch, in
the external inductor and in the diode.
The SHDN pin can be used to turn off the AP3015/A
and reduce the IQ to less than 1µA. In shutdown mode
the output voltage will be a diode drop below the input
voltage.
0.1 1 10
50
55
60
65
70
75
80
85
Efficiency (%)
Load Current (mA)
AP3015
VOUT=20V, L=10µH, COUT=1µF
Refer to Figure 14
VIN=4.2V
VIN=3.3V
VIN=2.5V
0.1 1 10
50
55
60
65
70
75
80
85
Efficiency (%)
Load Current (mA)
AP3015A
VOUT=3.3V, L=10µH, COUT=20µF
Refer to Figure 15
VIN=2.5V
VIN=1.2V
MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A
9
May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
Data
Sheet
Typical Application
Figure 14. AP3015 Typical Application in LCD/OLED Bias Supply
Figure 15. AP3015A Typical Application in 1 or 2 Cells to 3.3V Boost Converter
C1, C2: X5R or X7R Ceramic Capacitor
L1: SUMIDA CDRH4D16FB/NP-100MC or Equivalent
C1, C2, C3: X5R or X7R Ceramic Capacitor
L1: SUMIDA CDRH4D16FB/NP-100MC or Equivalent
VIN SW
SHDN AP3015 FB
GND
VIN L1
10µΗ
2.5V to 4.2V
C1
4.7µF
C2
1µF
D1
SS14
R2
130K
R1
2M
RLOAD
VOUT
20V
VIN SW
SHDN AP3015A FB
GND
VIN L1
10µΗ
1.2V to 2.5V
C1
4.7µF
C2
20µF
D1
SS14
R2
600K
R1
1M
RLOAD
VOUT
3.3V
C3
10pF
MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A
10
May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
Data
Sheet
SOT-23-5 Unit: mm(inch)
Mechanical Dimensions
2.820(0.111)
2.650(0.104)
1.500(0.059)
0.000(0.000)
0.300(0.012)
0.950(0.037)
0.900(0.035)
0.100(0.004)
0.200(0.008)
0.300(0.012)
8°
0°
3.020(0.119)
1.700(0.067)
2.950(0.116)
0.400(0.016)
0.150(0.006)
1.300(0.051)
0.200(0.008)
0.600(0.024)
1.800(0.071)
2.000(0.079)
0.700(0.028)
REF
TYP
1.450(0.057)
MAX
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility fo r use of any its products for any
particular purpose, nor does BCD Semiconductor Man ufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Limited
800, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
BCD Semiconductor Manufacturing Limited
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corporation
30920 Huntwood Ave. Hayward,
CA 94544, U.S.A
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- IC Design Group
Advanced Analog Circuits (Shanghai) Corporation
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
800 Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corp.
30920 Huntwood Ave. Hayward,
CA 94544, USA
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- Headquarters
BCD Semiconductor Manufacturing Limited
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
Tel: +86-21-24162266, Fax: +86-21-24162277