Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.3
www.infineon.com 2019-04-15
IKQ50N120CT2
TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT
LowVce(sat)IGBTinTRENCHSTOP™2technologycopackedwithsoft,fast
recoveryfullcurrentratedanti-parallelEmitterControlledDiode
Features:
TRENCHSTOP™2technologyoffers:
•VerylowVCE(sat),1.75Vatnominalcurrent
•10µsecshortcircuitwithstandtimeatTvj=175°C
•Easyparallelingcapabilityduetopositivetemperature
coefficientinVCE(sat)
•LowEMI
•Verysoft,fastrecoveryfullcurrentanti-paralleldiode
•Maximumjunctiontemperature175°C
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt
Applications:
•GPD(GeneralPurposeDrives)
•ServoDrives
•CommercialVehicles
•AgriculturalVehicles
•Three-levelSolarStringInverter
•Welding
ProductValidation:
Qualifiedforindustrialapplicationsaccordingtotherelevanttests
ofJEDEC47/20/22
G
C
E
KeyPerformanceandPackageParameters
Type VCE ICVCEsat,Tvj=25°C Tvjmax Marking Package
IKQ50N120CT2 1200V 50A 1.75V 175°C K50MCT2 PG-TO247-3-46
Datasheet 2 V2.3
2019-04-15
IKQ50N120CT2
TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet 3 V2.3
2019-04-15
IKQ50N120CT2
TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value Unit
Collector-emittervoltage,Tvj≥25°C VCE 1200 V
DCcollectorcurrent,limitedbyTvjmax
Tc=25°Cvaluelimitedbybondwire
Tc=134°C
IC100.0
50.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 200.0 A
Turn off safe operating area
VCE≤1200V,Tvj≤175°C,tp=1µs - 200.0 A
Diodeforwardcurrent,limitedbyTvjmax
Tc=25°Cvaluelimitedbybondwire
Tc=100°C
IF100.0
50.0
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 200.0 A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20
±30 V
Short circuit withstand time
VGE=15.0V,VCC≤600V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=175°C
tSC
10
µs
PowerdissipationTc=25°C
PowerdissipationTc=134°C Ptot 652.0
151.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s 260 °C
ThermalResistance
Value
min. typ. max.
Parameter Symbol Conditions Unit
RthCharacteristics
IGBT thermal resistance,1)
junction - case Rth(j-c) - - 0.23 K/W
Diode thermal resistance,1)
junction - case Rth(j-c) - - 0.42 K/W
Thermal resistance
junction - ambient Rth(j-a) - - 40 K/W
1) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included.
Datasheet 4 V2.3
2019-04-15
IKQ50N120CT2
TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=50.0A
Tvj=25°C
Tvj=175°C
-
-
1.75
2.30
2.15
-
V
Diode forward voltage VF
VGE=0V,IF=50.0A
Tvj=25°C
Tvj=175°C
-
-
1.90
1.85
2.30
-
V
Gate-emitter threshold voltage VGE(th) IC=1.70mA,VCE=VGE 5.1 5.8 6.5 V
Zero gate voltage collector current ICES
VCE=1200V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
-
4000
350
-
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=50.0A - 19.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 3270 -
Output capacitance Coes - 355 -
Reverse transfer capacitance Cres - 199 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=960V,IC=50.0A,
VGE=15V - 235.0 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) - 34 - ns
Rise time tr- 46 - ns
Turn-off delay time td(off) - 312 - ns
Fall time tf- 50 - ns
Turn-on energy Eon - 3.80 - mJ
Turn-off energy Eoff - 3.30 - mJ
Total switching energy Ets - 7.10 - mJ
Tvj=25°C,
VCC=600V,IC=50.0A,
VGE=0.0/15.0V,
RG(on)=10.0Ω,RG(off)=10.0Ω,
Lσ=90nH,Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Datasheet 5 V2.3
2019-04-15
IKQ50N120CT2
TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr - 410 - ns
Diode reverse recovery charge Qrr - 3.90 - µC
Diode peak reverse recovery current Irrm - 22.0 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -160 - A/µs
Tvj=25°C,
VR=600V,
IF=50.0A,
diF/dt=800A/µs
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) - 33 - ns
Rise time tr- 46 - ns
Turn-off delay time td(off) - 420 - ns
Fall time tf- 110 - ns
Turn-on energy Eon - 5.80 - mJ
Turn-off energy Eoff - 5.40 - mJ
Total switching energy Ets - 11.20 - mJ
Tvj=175°C,
VCC=600V,IC=50.0A,
VGE=0.0/15.0V,
RG(on)=10.0Ω,RG(off)=10.0Ω,
Lσ=90nH,Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time trr - 590 - ns
Diode reverse recovery charge Qrr - 8.60 - µC
Diode peak reverse recovery current Irrm - 30.0 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -122 - A/µs
Tvj=175°C,
VR=600V,
IF=50.0A,
diF/dt=800A/µs
Datasheet 6 V2.3
2019-04-15
IKQ50N120CT2
TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C;VGE=15V)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
1 10 100 1000
0.1
1
10
100
not for linear use
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot,POWERDISSIPATION[W]
25 50 75 100 125 150 175
0
100
200
300
400
500
600
700
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
TC,CASETEMPERATURE[°C]
IC,COLLECTORCURRENT[A]
25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
90
100
110
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0123456
0
25
50
75
100
125
150
175
200
VGE=20V
17V
15V
13V
11V
9V
7V
Datasheet 7 V2.3
2019-04-15
IKQ50N120CT2
TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT
Figure 5. Typicaloutputcharacteristic
(Tvj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0123456
0
25
50
75
100
125
150
175
200
VGE=20V
17V
15V
13V
11V
9V
7V
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
4 6 8 10 12 14 16 18
0
25
50
75
100
125
150
175
200
Tvj = 25°C
Tvj = 175°C
Figure 7. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
Tvj,JUNCTIONTEMPERATURE[°C]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
25 50 75 100 125 150 175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IC = 25A
IC = 50A
IC = 100A
Figure 8. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=175°C,VCE=600V,
VGE=15/0V,rG=10Ω,Dynamictestcircuitin
Figure E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
10 20 30 40 50 60 70 80 90 100
1
10
100
1000
td(off)
tf
td(on)
tr
Datasheet 8 V2.3
2019-04-15
IKQ50N120CT2
TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT
Figure 9. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=175°C,VCE=600V,
VGE=15/0V,IC=50A,Dynamictestcircuitin
Figure E)
rG,GATERESISTOR[Ω]
t,SWITCHINGTIMES[ns]
0 10 20 30 40 50
1
10
100
1000
td(off)
tf
td(on)
tr
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=600V,VGE=15/0V,
IC=50A,rG=10Ω,Dynamictestcircuitin
Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 175
1
10
100
1000
td(off)
tf
td(on)
tr
Figure 11. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=1.7mA)
Tvj,JUNCTIONTEMPERATURE[°C]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
25 50 75 100 125 150 175
1
2
3
4
5
6
7
8
typ.
min.
max.
Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=175°C,VCE=600V,
VGE=15/0V,rG=10Ω,Dynamictestcircuitin
Figure E)
IC,COLLECTORCURRENT[A]
E,SWITCHINGENERGYLOSSES[mJ]
10 20 30 40 50 60 70 80 90 100
0
5
10
15
20
25
30
35
Eoff
Eon
Ets
Datasheet 9 V2.3
2019-04-15
IKQ50N120CT2
TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=175°C,VCE=600V,
VGE=15/0V,IC=50A,Dynamictestcircuitin
Figure E)
rG,GATERESISTOR[Ω]
E,SWITCHINGENERGYLOSSES[mJ]
0 10 20 30 40 50
0
2
4
6
8
10
12
14
16
18
20
Eoff
Eon
Ets
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=600V,VGE=15/0V,
IC=50A,rG=10Ω,Dynamictestcircuitin
Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
E,SWITCHINGENERGYLOSSES[mJ]
25 50 75 100 125 150 175
0
1
2
3
4
5
6
7
8
9
10
11
12
Eoff
Eon
Ets
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=175°C,VGE=15/0V,
IC=50A,rG=10Ω,Dynamictestcircuitin
Figure E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
400 450 500 550 600 650 700 750 800
0
2
4
6
8
10
12
14
16
18
Eoff
Eon
Ets
Figure 16. Typicalgatecharge
(IC=50A)
QGE,GATECHARGE[nC]
VGE,GATE-EMITTERVOLTAGE[V]
0 50 100 150 200 250 300
0
2
4
6
8
10
12
14
16
VCC=240V
VCC=960V
Datasheet 10 V2.3
2019-04-15
IKQ50N120CT2
TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,CAPACITANCE[pF]
0 5 10 15 20 25 30
10
100
1000
1E+4
Cies
Coes
Cres
Figure 18. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤600V,Tvj≤175°C)
VGE,GATE-EMITTERVOLTAGE[V]
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
10 11 12 13 14 15 16 17 18
0
50
100
150
200
250
300
350
400
450
Figure 19. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤600V,startatTvj≤175°C)
VGE,GATE-EMITTERVOLTAGE[V]
tSC,SHORTCIRCUITWITHSTANDTIME[µs]
10 12 14 16 18 20
0
5
10
15
20
25
30
35
40
45
Figure 20. IGBTtransientthermalresistance
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
1E-4
0.001
0.01
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.027716
3.9E-4
2
0.073554
2.7E-3
3
0.124423
0.018807
4
2.6E-3
0.524934
5
3.2E-4
12.39161
Datasheet 11 V2.3
2019-04-15
IKQ50N120CT2
TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT
Figure 21. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
1E-4
0.001
0.01
0.1 D = 0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.05893
3.8E-4
2
0.16211
2.7E-3
3
0.18928
0.01654
4
5.4E-3
0.37453
5
3.7E-4
11.69172
Figure 22. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=600V)
diF/dt,DIODECURRENTSLOPE[A/µs]
trr,REVERSERECOVERYTIME[ns]
500 700 900 1100 1300 1500
0
100
200
300
400
500
600
700
800
900
Tvj = 25°C, IF = 50A
Tvj = 175°C, IF = 50A
Figure 23. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=600V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Qrr,REVERSERECOVERYCHARGE[µC]
500 700 900 1100 1300 1500
0
1
2
3
4
5
6
7
8
9
10
Tvj = 25°C, IF = 50A
Tvj = 175°C, IF = 50A
Figure 24. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=600V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Irr,REVERSERECOVERYCURRENT[A]
500 700 900 1100 1300 1500
0
5
10
15
20
25
30
35
40
Tvj = 25°C, IF = 50A
Tvj = 175°C, IF = 50A
Datasheet 12 V2.3
2019-04-15
IKQ50N120CT2
TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT
Figure 25. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=600V)
diF/dt,DIODECURRENTSLOPE[A/µs]
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
500 700 900 1100 1300 1500
-300
-250
-200
-150
-100
-50
0
Tvj = 25°C, IF = 50A
Tvj = 175°C, IF = 50A
Figure 26. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
20
40
60
80
100
120
140
160
180
200
Tvj = 25°C
Tvj = 175°C
Figure 27. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
Tvj,JUNCTIONTEMPERATURE[°C]
VF,FORWARDVOLTAGE[V]
25 50 75 100 125 150 175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IF = 25A
IF = 50A
IF = 100A
Datasheet 13 V2.3
2019-04-15
IKQ50N120CT2
TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT
MILLIMETERS
5.44 (BSC)
c
E3
D
E
D1
D2
L1
e
L
N
E1
b1
A
A1
b
A2
b2
DIM
0.59
1.35
-
20.90
16.25
15.70
1.05
19.80
13.10
3
MIN
4.90
2.31
1.16
1.90
1.96
0.053
0.823
0.640
0.618
0.023
0.193
0.091
0.046
0.075
0.041
0.077
0.780
0.516
0.66
16.85
1.55
13.50
21.10
15.90
20.10
1.35
4.30
5.10
2.51
1.26
2.10
MAX
2.06
0.026
3
0.663
0.531
0.061
0.831
0.626
0.053
0.791
0.169
INCHES
MIN MAX
0.201
0.099
0.050
0.083
0.081
EUROPEAN PROJECTION
ISSUE DATE
0
SCALE
7.5mm
55
0
REVISION
13-08-2014
01
DOCUMENT NO.
Z8B00174295
0.214 (BSC)
-
1.96 0.0772.25 0.089
D3 0.58 0.0230.78 0.031
R1.90 0.0752.10 0.083
Package Drawing PG-TO247-3-46
Datasheet 14 V2.3
2019-04-15
IKQ50N120CT2
TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT
t
ab
td(off) tftr
td(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
t
t
90% VGE
VGE(t)
t
t
t
t1t4
2% IC
10% VGE
2% VCE
t2t3
E
t
t
V I t
off = x x d
1
2
CE C
E
t
t
V I t
on = x x d
3
4
CE C
CC
dI /dt
F
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switching
characteristics
Figure E. Dynamic test circuit
Figure D.
I (t)
C
Parasitic inductance L ,
parasitic capacitor C ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
t t t
Q Q Q
rr a b
rr a b
= +
= +
QaQb
V (t)
CE
VGE(t)
I (t)
C
V (t)
CE
Testing Conditions
Datasheet 15 V2.3
2019-04-15
IKQ50N120CT2
TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT
RevisionHistory
IKQ50N120CT2
Revision:2019-04-15,Rev.2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2017-05-12 Final data sheet
2.2 2017-06-09 Update Figure 26
2.3 2019-04-15 Update condition for Vgeth page 4 and Fig. 11
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2019.
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(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany
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