IKQ50N120CT2 TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT LowVce(sat)IGBTinTRENCHSTOPTM2technologycopackedwithsoft,fast recoveryfullcurrentratedanti-parallelEmitterControlledDiode Features: C TRENCHSTOPTM2technologyoffers: *VerylowVCE(sat),1.75Vatnominalcurrent *10secshortcircuitwithstandtimeatTvj=175C *Easyparallelingcapabilityduetopositivetemperature coefficientinVCE(sat) *LowEMI *Verysoft,fastrecoveryfullcurrentanti-paralleldiode *Maximumjunctiontemperature175C *Pb-freeleadplating;RoHScompliant *CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt G E Applications: *GPD(GeneralPurposeDrives) *ServoDrives *CommercialVehicles *AgriculturalVehicles *Three-levelSolarStringInverter *Welding ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttests ofJEDEC47/20/22 KeyPerformanceandPackageParameters Type IKQ50N120CT2 Datasheet www.infineon.com VCE IC VCEsat,Tvj=25C Tvjmax Marking Package 1200V 50A 1.75V 175C K50MCT2 PG-TO247-3-46 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.3 2019-04-15 IKQ50N120CT2 TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Datasheet 2 V2.3 2019-04-15 IKQ50N120CT2 TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj25C VCE 1200 V DCcollectorcurrent,limitedbyTvjmax Tc=25Cvaluelimitedbybondwire Tc=134C IC 100.0 50.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 200.0 A Turn off safe operating area VCE1200V,Tvj175C,tp=1s - 200.0 A Diodeforwardcurrent,limitedbyTvjmax Tc=25Cvaluelimitedbybondwire Tc=100C IF 100.0 50.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 200.0 A Gate-emitter voltage TransientGate-emittervoltage(tp10s,D<0.010) VGE 20 30 V Short circuit withstand time VGE=15.0V,VCC600V Allowed number of short circuits < 1000 Time between short circuits: 1.0s Tvj=175C tSC PowerdissipationTc=25C PowerdissipationTc=134C Ptot 652.0 151.0 W Operating junction temperature Tvj -40...+175 C Storage temperature Tstg -55...+150 C s 10 Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s C 260 ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance,1) junction - case Rth(j-c) - - 0.23 K/W Diode thermal resistance,1) junction - case Rth(j-c) - - 0.42 K/W Thermal resistance junction - ambient Rth(j-a) - - 40 K/W 1) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included. Datasheet 3 V2.3 2019-04-15 IKQ50N120CT2 TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 1200 - - V VGE=15.0V,IC=50.0A Tvj=25C Tvj=175C - 1.75 2.30 2.15 - V - 1.90 1.85 2.30 - V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=50.0A Tvj=25C Tvj=175C Gate-emitter threshold voltage VGE(th) IC=1.70mA,VCE=VGE 5.1 5.8 6.5 V Zero gate voltage collector current ICES VCE=1200V,VGE=0V Tvj=25C Tvj=175C - 4000 350 - A Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=50.0A - 19.0 - S ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 3270 - - 355 - - 199 - - 235.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=960V,IC=50.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 34 - ns - 46 - ns - 312 - ns - 50 - ns - 3.80 - mJ - 3.30 - mJ - 7.10 - mJ IGBTCharacteristic,atTvj=25C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Datasheet Tvj=25C, VCC=600V,IC=50.0A, VGE=0.0/15.0V, RG(on)=10.0,RG(off)=10.0, L=90nH,C=67pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. 4 V2.3 2019-04-15 IKQ50N120CT2 TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT DiodeCharacteristic,atTvj=25C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25C, VR=600V, IF=50.0A, diF/dt=800A/s dirr/dt - 410 - ns - 3.90 - C - 22.0 - A - -160 - A/s SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 33 - ns - 46 - ns - 420 - ns - 110 - ns - 5.80 - mJ - 5.40 - mJ - 11.20 - mJ - 590 - ns - 8.60 - C - 30.0 - A - -122 - A/s IGBTCharacteristic,atTvj=175C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175C, VCC=600V,IC=50.0A, VGE=0.0/15.0V, RG(on)=10.0,RG(off)=10.0, L=90nH,C=67pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. DiodeCharacteristic,atTvj=175C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet Tvj=175C, VR=600V, IF=50.0A, diF/dt=800A/s dirr/dt 5 V2.3 2019-04-15 IKQ50N120CT2 TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT 700 600 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] 100 not for linear use 10 1 500 400 300 200 100 0.1 1 10 100 0 1000 25 VCE,COLLECTOR-EMITTERVOLTAGE[V] 50 75 100 125 150 175 TC,CASETEMPERATURE[C] Figure 1. Forwardbiassafeoperatingarea (D=0,TC=25C,Tvj175C;VGE=15V) Figure 2. Powerdissipationasafunctionofcase temperature (Tvj175C) 110 200 VGE=20V 100 17V 175 15V 80 150 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 90 70 60 50 40 30 13V 11V 125 9V 7V 100 75 50 20 25 10 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[C] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE15V,Tvj175C) Datasheet 0 1 2 3 4 5 6 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tvj=25C) 6 V2.3 2019-04-15 IKQ50N120CT2 TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT 200 200 VGE=20V Tvj = 25C Tvj = 175C 17V 175 175 150 13V 11V 125 150 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 15V 9V 7V 100 75 50 125 100 75 50 25 0 25 0 1 2 3 4 5 0 6 4 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=175C) 8 10 12 14 16 18 Figure 6. Typicaltransfercharacteristic (VCE=20V) 4.0 1000 IC = 25A IC = 50A IC = 100A 3.5 td(off) tf td(on) tr 3.0 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 6 VGE,GATE-EMITTERVOLTAGE[V] 2.5 2.0 1.5 100 10 1.0 0.5 0.0 25 50 75 100 125 150 1 175 Tvj,JUNCTIONTEMPERATURE[C] 10 20 30 40 50 60 70 80 90 Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=175C,VCE=600V, VGE=15/0V,rG=10,Dynamictestcircuitin Figure E) Datasheet 100 IC,COLLECTORCURRENT[A] 7 V2.3 2019-04-15 IKQ50N120CT2 TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 100 10 1 0 td(off) tf td(on) tr 1000 10 20 30 40 100 10 1 50 25 rG,GATERESISTOR[] Figure 9. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175C,VCE=600V, VGE=15/0V,IC=50A,Dynamictestcircuitin Figure E) 100 125 150 175 35 typ. min. max. 7 Eoff Eon Ets 30 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 75 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=600V,VGE=15/0V, IC=50A,rG=10,Dynamictestcircuitin Figure E) 8 6 5 4 3 25 20 15 10 2 1 50 Tvj,JUNCTIONTEMPERATURE[C] 5 25 50 75 100 125 150 0 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=1.7mA) Datasheet 10 20 30 40 50 60 70 80 90 100 IC,COLLECTORCURRENT[A] Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175C,VCE=600V, VGE=15/0V,rG=10,Dynamictestcircuitin Figure E) 8 V2.3 2019-04-15 IKQ50N120CT2 TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT 20 12 Eoff Eon Ets 10 16 14 12 10 8 6 4 9 8 7 6 5 4 3 2 2 0 Eoff Eon Ets 11 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 18 1 0 10 20 30 40 0 50 25 rG,GATERESISTOR[] Figure 13. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175C,VCE=600V, VGE=15/0V,IC=50A,Dynamictestcircuitin Figure E) 150 175 14 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] 125 VCC=240V VCC=960V 12 10 8 6 4 12 10 8 6 4 2 2 450 500 550 600 650 700 750 0 800 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175C,VGE=15/0V, IC=50A,rG=10,Dynamictestcircuitin Figure E) Datasheet 100 16 Eoff Eon Ets 14 0 400 75 Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=600V,VGE=15/0V, IC=50A,rG=10,Dynamictestcircuitin Figure E) 18 16 50 Tvj,JUNCTIONTEMPERATURE[C] 0 50 100 150 200 250 300 QGE,GATECHARGE[nC] Figure 16. Typicalgatecharge (IC=50A) 9 V2.3 2019-04-15 IKQ50N120CT2 TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT 1E+4 450 IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] C,CAPACITANCE[pF] Cies Coes Cres 1000 100 10 0 5 10 15 20 25 400 350 300 250 200 150 100 50 0 30 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 11 12 13 14 15 16 17 18 VGE,GATE-EMITTERVOLTAGE[V] Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Figure 18. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE600V,Tvj175C) 45 Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] tSC,SHORTCIRCUITWITHSTANDTIME[s] 40 35 30 25 20 15 10 5 0.1 D = 0.5 0.2 0.1 0.05 0.01 0.02 0.01 single pulse 0.001 i: 1 2 3 4 5 ri[K/W]: 0.027716 0.073554 0.124423 2.6E-3 3.2E-4 i[s]: 3.9E-4 2.7E-3 0.018807 0.524934 12.39161 0 10 12 14 16 18 20 1E-4 1E-6 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE600V,startatTvj175C) Datasheet 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 20. IGBTtransientthermalresistance (D=tp/T) 10 V2.3 2019-04-15 IKQ50N120CT2 TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT Tvj = 25C, IF = 50A Tvj = 175C, IF = 50A 800 0.1 D = 0.5 trr,REVERSERECOVERYTIME[ns] Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] 900 0.2 0.1 0.05 0.02 0.01 0.01 single pulse 0.001 700 600 500 400 300 200 100 i: 1 2 3 4 5 ri[K/W]: 0.05893 0.16211 0.18928 5.4E-3 3.7E-4 i[s]: 3.8E-4 2.7E-3 0.01654 0.37453 11.69172 1E-4 1E-6 1E-5 1E-4 0.001 0.01 0.1 0 500 1 tp,PULSEWIDTH[s] Figure 21. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 1300 1500 Tvj = 25C, IF = 50A Tvj = 175C, IF = 50A 35 Irr,REVERSERECOVERYCURRENT[A] Qrr,REVERSERECOVERYCHARGE[C] 1100 40 Tvj = 25C, IF = 50A Tvj = 175C, IF = 50A 8 7 6 5 4 3 2 30 25 20 15 10 5 1 0 500 900 Figure 22. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=600V) 10 9 700 diF/dt,DIODECURRENTSLOPE[A/s] 700 900 1100 1300 0 500 1500 700 900 1100 1300 1500 diF/dt,DIODECURRENTSLOPE[A/s] diF/dt,DIODECURRENTSLOPE[A/s] Figure 23. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=600V) Figure 24. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=600V) Datasheet 11 V2.3 2019-04-15 IKQ50N120CT2 TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT 0 200 Tvj = 25C, IF = 50A Tvj = 175C, IF = 50A -50 160 IF,FORWARDCURRENT[A] dIrr/dt,diodepeakrateoffallofIrr[A/s] Tvj = 25C Tvj = 175C 180 -100 -150 -200 140 120 100 80 60 40 -250 20 -300 500 700 900 1100 1300 0 1500 diF/dt,DIODECURRENTSLOPE[A/s] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VF,FORWARDVOLTAGE[V] Figure 25. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=600V) Figure 26. Typicaldiodeforwardcurrentasafunction offorwardvoltage 4.0 IF = 25A IF = 50A IF = 100A 3.5 VF,FORWARDVOLTAGE[V] 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 27. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Datasheet 12 V2.3 2019-04-15 IKQ50N120CT2 TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT Package Drawing PG-TO247-3-46 DIM A A1 A2 b b1 b2 MIN 4.90 2.31 1.90 1.16 1.96 1.96 MILLIMETERS MAX 5.10 2.51 2.10 1.26 2.25 2.06 INCHES MIN 0.193 0.091 0.075 0.046 0.077 0.077 MAX 0.201 0.099 0.083 0.050 0.089 0.081 DOCUMENT NO. Z8B00174295 SCALE 0 c D D1 D2 D3 E E1 E3 e N L L1 R Datasheet 0.66 21.10 16.85 1.35 0.78 15.90 13.50 1.55 0.59 20.90 16.25 1.05 0.58 15.70 13.10 1.35 0.026 0.831 0.663 0.053 0.031 0.626 0.531 0.061 0.023 0.823 0.640 0.041 0.023 0.618 0.516 0.053 0.214 (BSC) 5.44 (BSC) 19.80 1.90 20.10 4.30 2.10 0.780 0.075 13 5 5 7.5mm EUROPEAN PROJECTION ISSUE DATE 13-08-2014 3 3 0 0.791 0.169 0.083 REVISION 01 V2.3 2019-04-15 IKQ50N120CT2 TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 14 V2.3 2019-04-15 IKQ50N120CT2 TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT RevisionHistory IKQ50N120CT2 Revision:2019-04-15,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2017-05-12 Final data sheet 2.2 2017-06-09 Update Figure 26 2.3 2019-04-15 Update condition for Vgeth page 4 and Fig. 11 Datasheet 15 V2.3 2019-04-15 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)InfineonTechnologiesAG2019. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie").Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer'scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer'sproductsandanyuseof theproductofInfineonTechnologiesincustomer'sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer'stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. 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