HEXFET® Power MOSFET
S
D
G
VDSS = 100V
RDS(on) = 0.185Ω
ID = 10A
Description
lSurface Mount (IRLR120N)
lStraight Lead (IRLU120N)
lAdvanced Process Technology
lFast Switching
lFully Avalanche Rated
lLead-Free
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve the lowest possible
on-resistance per silicon area. This benefit, combined with the
fast switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient device for use in a wide variety of
applications.
The D-PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight lead
version (IRFU series) is for through-hole mounting applications.
Power dissipation levels up to 1.5 watts are possible in typical
surface mount applications.
IRLR120NPbF
IRLU120NPbF
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 10
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 7.0 A
IDM Pulsed Drain Current 35
PD @TC = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 W/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy 85 mJ
IAR Avalanche Current 6.0 A
EAR Repetitive Avalanche Energy 4.8 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 9, 2014
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 3.1
RθJA Junction-to-Ambient (PCB mount) ** ––– 50 °C/W
RθJA Junction-to-Ambient ––– 110
Thermal Resistance
D-Pak
IRLR120NPbF
G
S
D
D
S
G
I-Pak
IRLU120NPbF
Form
Quantity
Tube 75 IRLR120NPbF
Tape and Reel 2000 IRLR120NTRPbF
Tape and Reel Left 3000 IRLR120NTRLPbF
Tape and Reel Right 3000 IRLR120NTRRPbF EOL notice # 289
IRLU120NPbF IPak Tube 75 IRLU120NPbF
NotePackage Type
Standard Pack
Orderable Part NumberBase Part Number
IRLR120NPbF D-Pak
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 9, 2014
IRLR/U120NPbF
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJBreakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.185 VGS = 10V, ID = 6.0A
––– ––– 0.225 ΩVGS = 5.0V, ID = 6.0A
––– ––– 0.265 VGS = 4.0V, ID = 5.0A
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250μA
gfs Forward Transconductance 3.1 ––– ––– S VDS = 25V, ID = 6.0A
––– ––– 25 μAVDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
QgTotal Gate Charge ––– ––– 20 ID = 6.0A
Qgs Gate-to-Source Charge ––– ––– 4.6 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 10 VGS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 4.0 ––– VDD = 50V
trRise Time ––– 35 ––– ns ID = 6.0A
td(off) Turn-Off Delay Time ––– 23 ––– RG = 11Ω, VGS = 5.0V
tfFall Time ––– 22 ––– RD = 8.2Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 440 ––– VGS = 0V
Coss Output Capacitance ––– 97 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 50 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
IGSS
S
D
G
LSInternal Source Inductance ––– 7.5 –––
RDS(on) Static Drain-to-Source On-Resistance
LDInternal Drain Inductance 4.5
IDSS Drain-to-Source Leakage Current
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 6.0A, VGS = 0V
trr Reverse Recovery Time ––– 110 160 ns TJ = 25°C, IF =6.0A
Qrr Reverse RecoveryCharge ––– 410 620 nC di/dt = 100A/μs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
10
35
Notes:
VDD = 25V, starting TJ = 25°C, L = 4.7mH
RG = 25Ω, IAS = 6.0A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
ISD ≤ 6.0A, di/dt ≤ 340A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Uses IRL520N data and test conditions.
This is applied for I-PAK, LS of D-PAK is measured between lead and
center of die contact
Pulse width ≤ 300μs; duty cycle ≤ 2%.
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 9, 2014
IRLR/U120NPbF
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
0.1
1
10
100
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
20μs PULSE WIDTH
T = 25°C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
0.1
1
10
100
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
20μs PULSE WIDTH
T = 175°C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
J
0.1
1
10
100
246810
T = 25°C
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
T = 175°C
J
A
V = 50V
20μs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 10A
D
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 9, 2014
IRLR/U120NPbF
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
200
400
600
800
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
3
6
9
12
15
0 5 10 15 20 25
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
V = 80V
V = 50V
V = 20V
A
FOR TEST CIRCUIT
SEE FIGURE 13
I = 6.0A
D
DS
DS
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
T = 175°C
J
0.1
1
10
100
1 10 100 1000
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10μs
100μs
1ms
10ms
A
T = 25°C
T = 175°C
Single Pulse
C
J
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 9, 2014
IRLR/U120NPbF
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
5.0V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0
2
4
6
8
10
25 50 75 100 125 150 175
C
I , Drain Current (Amps)
D
T , Case Temperature (°C)
A
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 9, 2014
IRLR/U120NPbF
QG
QGS QGD
VG
Charge
5.0 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
10V
0
40
80
120
160
200
25 50 75 100 125 150 175
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
I
TOP 2.4A
4.2A
BOTTOM 6.0A
D
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 9, 2014
IRLR/U120NPbF
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 9, 2014
IRLR/U120NPbF
D-Pak (TO-252AA) Part Marking Information
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
INTERNATIONAL
AS SEMBLED ON WW 16, 2001
IN THE AS SEMBLY LINE "A"
OR
Note: "P" in ass embly line pos ition
EXAMPLE:
LOT CODE 1234
THIS IS AN IRFR120
WIT H AS S E MB L Y
i ndicates "L ead-F ree"
PRODUCT (OPT IONAL)
P = DESIGNATES LEAD-FREE
A = AS S E MB L Y S I T E CODE
PART NUMBER
WE E K 16
DAT E CODE
YEAR 1 = 2001
RECTIFIER
INTERNAT IONAL
LOGO
LOT CODE
AS S E MB L Y
3412
IR FR120
116A
LINE A
34
RECTIFIER
LOGO
IRF R120
12
AS S E MB L Y
LOT CODE
YEAR 1 = 2001
DAT E CODE
PART NUMBER
WE E K 16
"P" in as s embly line pos ition indicates
"L ead-F ree" quali fication to the cons umer -level
P = DESIGNATES LEAD-FREE
PRODUCT QUALIFIED TO THE
CONS UME R L EVE L (OPT IONAL)
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 9, 2014
IRLR/U120NPbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
78
LINE A
LOGO
INT E RNAT IONAL
R ECT IF IE R
OR
PRODUCT (OPTIONAL)
P = DESIGNATES LEAD-FREE
A = ASSEMBLY SITE CODE
IRF U 120
PART NUMBER
WEEK 19
DAT E CODE
YEAR 1 = 2001
RECTIFIER
INT E R NAT IONAL
LOGO
ASSEMBLY
LOT CODE
IRFU120
56
DAT E CODE
PART NUMBER
LOT CODE
ASSEMBLY
56 78
YEAR 1 = 2001
WEEK 19
119A
indicates Lead-Free"
ASS EMBL ED ON WW 19, 2001
IN THE ASSEMBLY LINE "A"
Note: "P" in as s embly line pos ition
EXAMPLE:
WITH ASSEMBLY
T HIS IS AN IRF U120
LOT CODE 5678
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 9, 2014
IRLR/U120NPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 9, 2014
IRLR/U120NPbF
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Moisture Sensitivity Level D-Pak
I-Pak
RoHS compliant Yes
Qualification information
†
Qualification level
Industrial
(per JEDEC JESD47F
††
guidelines)
MS L 1
Revision History
Date Comment
• Updated Electrical parameter table typo on Rdson units from "W" to "Ω" on page2.
• Updated Package outline on page 8 & page 9.
• Added Orderable table on page1.
• Updated datasheet with IR corporate template.
• Updated ordering information to reflect the End-Of-life (EOL notice #289)
• Added Qualification table on page10.
7/9/2014
