IRLR120NPbF IRLU120NPbF l l l Surface Mount (IRLR120N) Straight Lead (IRLU120N) Advanced Process Technology l l Fast Switching l HEXFET(R) Power MOSFET D Fully Avalanche Rated Lead-Free VDSS = 100V RDS(on) = 0.185 G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Base Part Number IRLR120NPbF Package Type D-Pak IRLU120NPbF ID = 10A S D S G D-Pak IRLR120NPbF Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 S D I-Pak IRLU120NPbF Note Orderable Part Number IRLR120NPbF IRLR120NTRPbF IRLR120NTRLPbF Tape and Reel Right 3000 IRLR120NTRRPbF Tube 75 IRLU120NPbF IPak G EOL notice # 289 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units 10 7.0 35 48 0.32 16 85 6.0 4.8 5.0 -55 to + 175 A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) Thermal Resistance Parameter RJC RJA RJA 1 Junction-to-Case Junction-to-Ambient (PCB mount) ** Junction-to-Ambient www.irf.com (c) 2014 International Rectifier Typ. Max. Units --- --- --- 3.1 50 110 C/W Submit Datasheet Feedback July 9, 2014 IRLR/U120NPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Min. Typ. Max. Units Conditions 100 --- --- V VGS = 0V, ID = 250A --- 0.12 --- V/C Reference to 25C, I D = 1mA --- --- 0.185 VGS = 10V, ID = 6.0A --- --- 0.225 VGS = 5.0V, ID = 6.0A --- --- 0.265 VGS = 4.0V, ID = 5.0A 1.0 --- 2.0 V VDS = VGS, ID = 250A 3.1 --- --- S VDS = 25V, ID = 6.0A --- --- 25 VDS = 100V, VGS = 0V A --- --- 250 VDS = 80V, VGS = 0V, TJ = 150C --- --- 100 VGS = 16V nA --- --- -100 VGS = -16V --- --- 20 ID = 6.0A --- --- 4.6 nC VDS = 80V --- --- 10 VGS = 5.0V, See Fig. 6 and 13 --- 4.0 --- VDD = 50V --- 35 --- ID = 6.0A ns --- 23 --- RG = 11, VGS = 5.0V --- 22 --- RD = 8.2, See Fig. 10 Between lead, 4.5 nH 6mm (0.25in.) G from package --- 7.5 --- and center of die contact --- 440 --- VGS = 0V --- 97 --- pF VDS = 25V --- 50 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time IS ISM VSD trr Qrr ton Min. Typ. Max. Units Conditions D MOSFET symbol 10 --- --- showing the A G integral reverse --- --- 35 p-n junction diode. S --- --- 1.3 V TJ = 25C, IS = 6.0A, VGS = 0V --- 110 160 ns TJ = 25C, IF =6.0A --- 410 620 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 4.7mH RG = 25, IAS = 6.0A. (See Figure 12) Pulse width 300s; duty cycle 2%. This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact ISD 6.0A, di/dt 340A/s, VDD V(BR)DSS, Uses IRL520N data and test conditions. TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 2 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback July 9, 2014 D S IRLR/U120NPbF 100 100 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 10 1 2.5V 20s PULSE WIDTH T J = 25C 0.1 0.1 1 10 A 10 2.5V 1 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25C TJ = 175C 1 VDS = 50V 20s PULSE WIDTH 4 6 8 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 www.irf.com (c) 2014 International Rectifier 10 A 100 Fig 2. Typical Output Characteristics 100 0.1 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 20s PULSE WIDTH T J = 175C 0.1 0.1 100 VDS , Drain-to-Source Voltage (V) 2 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) TOP 10 A I D = 10A 2.5 2.0 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature Submit Datasheet Feedback A 80 100 120 140 160 180 July 9, 2014 IRLR/U120NPbF Ciss C, Capacitance (pF) 600 15 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd V GS , Gate-to-Source Voltage (V) 800 Coss Crss 0 1 10 V DS = 80V V DS = 50V V DS = 20V 12 400 200 I D = 6.0A 100 A 9 6 3 FOR TEST CIRCUIT SEE FIGURE 13 0 0 VDS , Drain-to-Source Voltage (V) 15 20 A 25 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 10s I D , Drain Current (A) ISD , Reverse Drain Current (A) 10 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage TJ = 175C 10 TJ = 25C 1 VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 5 www.irf.com (c) 2014 International Rectifier A 1.4 10 100s 1ms 1 10ms TC = 25C TJ = 175C Single Pulse 0.1 1 10 A 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback July 9, 2014 IRLR/U120NPbF 10 V DS VGS ID, Drain Current (Amps) 8 D.U.T. RG 6 RD + -VDD 5.0V Pulse Width 1 s Duty Factor 0.1 % 4 Fig 10a. Switching Time Test Circuit 2 VDS 90% A 0 25 50 75 100 125 150 175 TC , Case Temperature (C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback July 9, 2014 15V L VDS D.U.T RG IAS 10V tp DRIVER + V - DD A 0.01 Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) IRLR/U120NPbF 200 TOP BOTTOM 160 ID 2.4A 4.2A 6.0A 120 80 40 0 25 V(BR)DSS 50 75 100 125 150 Starting TJ , Junction Temperature (C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 5.0 V QGS + V - DS D.U.T. QGD VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 www.irf.com (c) 2014 International Rectifier IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Submit Datasheet Feedback July 9, 2014 A 175 IRLR/U120NPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * * * * Driver Gate Drive Period P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS 7 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback July 9, 2014 IRLR/U120NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 2001 IN T HE AS SEMBLY LINE "A" PART NUMBER INTERNAT IONAL RECT IF IER LOGO Note: "P" in ass embly line pos ition indicates "Lead-F ree" IRFR120 12 116A 34 ASS EMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 16 LINE A "P" in as sembly line pos ition indicates "Lead-F ree" qualification to the cons umer-level OR INTERNATIONAL RECT IF IER LOGO PART NUMBER IRFR120 12 AS SEMBLY LOT CODE 34 DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) P = DES IGNAT ES LEAD-FREE PRODUCT QUALIF IED T O T HE CONS UMER LEVEL (OPT IONAL) YEAR 1 = 2001 WEEK 16 A = AS SEMBLY SIT E CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback July 9, 2014 IRLR/U120NPbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information E XAMP L E : T H IS IS AN IR F U 120 WIT H AS S E MB L Y L OT CODE 5678 AS S E MB L E D ON WW 19, 2001 IN T H E AS S E MB LY L INE "A" IN T E R NAT IONAL R E CT IF IE R L OGO P AR T NU MB E R IR F U 120 119A 56 78 AS S E MB LY L OT CODE Note: "P " in as s embly line pos ition indicates L ead-F ree" DAT E CODE YE AR 1 = 2001 WE E K 19 LINE A OR INT E R NAT IONAL R E CT IF IE R L OGO P AR T N U MB E R IR F U 120 56 AS S E MB L Y L OT CODE 78 DAT E CODE P = DE S IGN AT E S LE AD-F R E E P R ODU CT (OP T IONAL ) YE AR 1 = 2001 WE E K 19 A = AS S E MB L Y S IT E CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback July 9, 2014 IRLR/U120NPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback July 9, 2014 IRLR/U120NPbF Qualification information Industrial Qualification level (per JEDE C JE S D47F Moisture Sensitivity Level guidelines) MS L1 D-Pak I-Pak RoHS compliant Yes Qualification standards can be found at International Rectifier's web site: http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release Revision History Date 7/9/2014 Comment * Updated Electrical parameter table typo on Rdson units from "W" to "" on page2. * Updated Package outline on page 8 & page 9. * Added Orderable table on page1. * Updated datasheet with IR corporate template. * Updated ordering information to reflect the End-Of-life (EOL notice #289) * Added Qualification table on page10. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 11 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback July 9, 2014