Semiconductor Components Industries, LLC, 2001
October, 2001 – Rev. 1 1Publication Order Number:
MPS2222/D
MPS2222, MPS2222A
MPS2222A is a Preferred Device
General Purpose
Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage MPS2222
MPS2222A
VCEO 30
40
Vdc
Collector–Base Voltage MPS2222
MPS2222A
VCBO 60
75
Vdc
Emitter–Base V oltage MPS2222
MPS2222A
VEBO 5.0
6.0
Vdc
Collector Current – Continuous IC600 mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD625
5.0 mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD1.5
12 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to
+150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction to Ambient RθJA 200 °C/W
Thermal Resistance,
Junction to Case RθJC 83.3 °C/W Device Package Shipping
ORDERING INFORMATION
MPS2222 TO–92
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5000 Units/Box
Preferred devices are recommended choices for future use
and best overall value.
MPS2222A TO–92 5000 Units/Box
COLLECTOR
3
2
BASE
1
EMITTER
MPS2222ARLRA TO–92 2000/Tape & Reel
MPS2222ARLRM TO–92 2000/Ammo Pack
MPS2222ARLRP TO–92 2000/Ammo Pack
MPS2222RLRA TO–92 2000/Tape & Reel
MPS2222RLRM TO–92 2000/Ammo Pack
MPS2222RLRP TO–92 2000/Ammo Pack
TO–92
CASE 29
STYLE 1
3
2
1
Y = Year
WW = Work Week
MARKING DIAGRAMS
MPS
2222
YWW
MPS2
222A
YWW
MPS2222, MPS2222A
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage MPS2222
(IC = 10 mAdc, IB = 0) MPS2222A V(BR)CEO 30
40 –
–Vdc
Collector–Base Breakdown Voltage MPS2222
(IC = 10 Adc, IE = 0) MPS2222A V(BR)CBO 60
75 –
–Vdc
Emitter–Base Breakdown V oltage MPS2222
(IE = 10 Adc, IC = 0) MPS2222A V(BR)EBO 5.0
6.0 –
–Vdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MPS2222A ICEX – 10 nAdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0) MPS2222
(VCB = 60 Vdc, IE = 0) MPS2222A
(VCB = 50 Vdc, IE = 0, TA = 125°C) MPS2222
(VCB = 50 Vdc, IE = 0, TA = 125°C) MPS2222A
ICBO –
–
–
–
0.01
0.01
10
10
µAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0) MPS2222A IEBO – 100 nAdc
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MPS2222A IBL – 20 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) MPS2222A only
(IC = 150 mAdc, VCE = 10 Vdc) (Note 1.)
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1.)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 1.) MPS2222
MPS2222A
hFE 35
50
75
35
100
50
30
40
–
–
–
–
300
–
–
–
–
Collector–Emitter Saturation Voltage (Note 1.)
(IC = 150 mAdc, IB = 15 mAdc) MPS2222
MPS2222A
(IC = 500 mAdc, IB = 50 mAdc) MPS2222
MPS2222A
VCE(sat) –
–
–
–
0.4
0.3
1.6
1.0
Vdc
Base–Emitter Saturation Voltage (Note 1.)
(IC = 150 mAdc, IB = 15 mAdc) MPS2222
MPS2222A
(IC = 500 mAdc, IB = 50 mAdc) MPS2222
MPS2222A
VBE(sat) –
0.6
–
–
1.3
1.2
2.6
2.0
Vdc
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
MPS2222, MPS2222A
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3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (Note 2.)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) MPS2222
MPS2222A
fT250
300 –
–
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo – 8.0 pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MPS2222
MPS2222A
Cibo –
–30
25
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A
hie 2.0
0.25 8.0
1.25
kΩ
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A
hre –
–8.0
4.0
X 10–4
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A
hfe 50
75 300
375
–
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A
hoe 5.0
25 35
200
mhos
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MPS2222A rb′Cc– 150 ps
Noise Figure
(IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) MPS2222A
NF – 4.0 dB
SWITCHING CHARACTERISTICS MPS2222A only
Delay Time (VCC = 30 Vdc, VBE
(
off
)
= –0.5 Vdc, td– 10 ns
Rise Time
(VCC
30
Vdc
,
VBE(off)
0
.
5
Vdc
,
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) tr– 25 ns
Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts– 225 ns
Fall Time
(VCC
30
Vdc
,
IC
150
mAdc
,
IB1 = IB2 = 15 mAdc) (Figure 2) tf– 60 ns
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
Figure 1. Turn–On Time Figure 2. Turn–Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
+16 V
-2 V < 2 ns
0
1.0 to 100 µs,
DUTY CYCLE ≈ 2.0%
1 kΩ
+30 V
200
CS* < 10 pF
+16 V
-14 V
0
< 20 ns
1.0 to 100 µs,
DUTY CYCLE ≈ 2.0%
1 k
+30 V
200
CS* < 10 pF
-4 V
1N914
MPS2222, MPS2222A
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4
1000
10
20
30
50
70
100
200
300
500
700
1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
hFE, DC CURRENT GAINVCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
TJ = 125°C
TJ = 25°C
25°C
-55°C
IC = 1.0 mA 10 mA 150 mA 500 mA
VCE = 1.0 V
VCE = 10 V
MPS2222, MPS2222A
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5
Figure 5. Turn–On Time
IC, COLLECTOR CURRENT (mA)
70
100
200
50
t, TIME (ns)
10 20 70
5.0
100
5.0 7.0 30 50 200
10
30
7.0
20
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
3.0
2.0
300 500
500
t, TIME (ns)
5.0
7.0
10
20
30
50
70
100
200
300
Figure 6. Turn–Off Time
IC, COLLECTOR CURRENT (mA)
10 20 70 1005.0 7.0 30 50 200 300 500
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
t′s = ts - 1/8 tf
tf
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
4.0
6.0
8.0
10
2.0
0.1
Figure 8. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
1.0 2.0 5.0 10 20 50
0.2 0.5
0
100
NF, NOISE FIGURE (dB)
0.01 0.02 0.05
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150 Ω
500 µA, RS = 200 Ω
100 µA, RS = 2.0 kΩ
50 µA, RS = 4.0 kΩ
f = 1.0 kHz
IC = 50 µA
100 µA
500 µA
1.0 mA
4.0
6.0
8.0
10
2.0
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
3.0
5.0
7.0
10
2.0
0.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 50
0.2 0.3 0.5 0.7
Ccb
20
30
Ceb
Figure 10. Current–Gain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
500
fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE = 20 V
TJ = 25°C
MPS2222, MPS2222A
http://onsemi.com
6
Figure 11. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
V, VOLTAGE (VOLTS)
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
Figure 12. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
-0.5
0
+0.5
COEFFICIENT (mV/ C)
-1.0
-1.5
-2.5
°
RVC for VCE(sat)
RVB for VBE
0.1 1.0 2.0 5.0 10 20 50
0.2 0.5 100 200 500 1.0 k
1.0 V
-2.0
0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500
MPS2222, MPS2222A
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7
PACKAGE DIMENSIONS
TO–92
TO–226AA
CASE 29–11
ISSUE AL NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
MPS2222, MPS2222A
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8
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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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Sales Representative.
MPS2222/D
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