MPS2222, MPS2222A MPS2222A is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO MPS2222 MPS2222A Collector-Base Voltage 30 40 VCBO MPS2222 MPS2222A Emitter-Base Voltage 1 EMITTER Vdc 60 75 VEBO MPS2222 MPS2222A IC Total Device Dissipation @ TA = 25C Derate above 25C PD Total Device Dissipation @ TC = 25C Derate above 25C PD 1 2 600 mAdc 625 5.0 mW mW/C 1.5 12 Watts mW/C -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W TJ, Tstg TO-92 CASE 29 STYLE 1 Vdc 5.0 6.0 Collector Current - Continuous Operating and Storage Junction Temperature Range 2 BASE Vdc 3 MARKING DIAGRAMS MPS 2222 YWW Y WW THERMAL CHARACTERISTICS Characteristic MPS2 222A YWW = Year = Work Week ORDERING INFORMATION Device Package Shipping MPS2222 TO-92 5000 Units/Box MPS2222A TO-92 5000 Units/Box MPS2222ARLRA TO-92 2000/Tape & Reel MPS2222ARLRM TO-92 2000/Ammo Pack MPS2222ARLRP TO-92 2000/Ammo Pack MPS2222RLRA TO-92 2000/Tape & Reel MPS2222RLRM TO-92 2000/Ammo Pack MPS2222RLRP TO-92 2000/Ammo Pack Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 1 1 Publication Order Number: MPS2222/D MPS2222, MPS2222A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MPS2222 MPS2222A V(BR)CEO 30 40 - - Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) MPS2222 MPS2222A V(BR)CBO 60 75 - - Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) MPS2222 MPS2222A V(BR)EBO 5.0 6.0 - - Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) ICEX - 10 nAdc MPS2222A Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125C) (VCB = 50 Vdc, IE = 0, TA = 125C) MPS2222 MPS2222A MPS2222 MPS2222A - - - - 0.01 0.01 10 10 Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO - 100 nAdc MPS2222A Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) IBL - 20 nAdc MPS2222A 35 50 75 35 100 50 30 40 - - - - 300 - - - MPS2222 MPS2222A - - 0.4 0.3 MPS2222 MPS2222A - - 1.6 1.0 MPS2222 MPS2222A - 0.6 1.3 1.2 MPS2222 MPS2222A - - 2.6 2.0 Adc ICBO ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = -55C) (IC = 150 mAdc, VCE = 10 Vdc) (Note 1.) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1.) (IC = 500 mAdc, VCE = 10 Vdc) (Note 1.) hFE MPS2222A only MPS2222 MPS2222A Collector-Emitter Saturation Voltage (Note 1.) (IC = 150 mAdc, IB = 15 mAdc) - VCE(sat) (IC = 500 mAdc, IB = 50 mAdc) Base-Emitter Saturation Voltage (Note 1.) (IC = 150 mAdc, IB = 15 mAdc) Vdc VBE(sat) (IC = 500 mAdc, IB = 50 mAdc) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. http://onsemi.com 2 Vdc MPS2222, MPS2222A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 250 300 - - - 8.0 - - 30 25 2.0 0.25 8.0 1.25 - - 8.0 4.0 50 75 300 375 5.0 25 35 200 rbCc - 150 ps NF - 4.0 dB (VCC = 30 Vdc, VBE(off) = -0.5 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) td - 10 ns tr - 25 ns (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2) ts - 225 ns tf - 60 ns SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (Note 2.) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT MPS2222 MPS2222A Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MHz Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) pF Cibo pF MPS2222 MPS2222A Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A MPS2222A hie Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A MPS2222A Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A MPS2222A Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A MPS2222A Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MPS2222A k X 10-4 hre hfe - mhos hoe Noise Figure (IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz) MPS2222A SWITCHING CHARACTERISTICS MPS2222A only Delay Time Rise Time Storage Time Fall Time 2. fT is defined as the frequency at which |hfe| extrapolates to unity. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100 s, DUTY CYCLE 2.0% +16 V 0 -2 V 200 +16 V 0 < 2 ns 1 k CS* < 10 pF -14 V 1.0 to 100 s, DUTY CYCLE 2.0% < 20 ns 1k 1N914 -4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn-On Time Figure 2. Turn-Off Time http://onsemi.com 3 200 CS* < 10 pF MPS2222, MPS2222A hFE , DC CURRENT GAIN 1000 700 500 TJ = 125C 300 200 25C 100 70 50 -55C 30 VCE = 1.0 V VCE = 10 V 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 700 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 TJ = 25C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 Figure 4. Collector Saturation Region http://onsemi.com 4 3.0 5.0 10 20 30 50 MPS2222, MPS2222A 200 100 70 50 tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 ts = ts - 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time 6.0 f = 1.0 kHz 8.0 4.0 2.0 IC = 50 A 100 A 500 A 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects Ceb 10 7.0 5.0 Ccb 3.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) f, FREQUENCY (kHz) 20 0.2 0.3 0 50 50 100 20 30 CAPACITANCE (pF) 500 10 RS = OPTIMUM RS = SOURCE RS = RESISTANCE IC = 1.0 mA, RS = 150 500 A, RS = 200 100 A, RS = 2.0 k 50 A, RS = 4.0 k 8.0 300 Figure 6. Turn-Off Time NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 2.0 0.1 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 300 t, TIME (ns) t, TIME (ns) 500 IC/IB = 10 TJ = 25C 500 VCE = 20 V TJ = 25C 300 200 100 70 50 1.0 Figure 9. Capacitances 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current-Gain Bandwidth Product http://onsemi.com 5 MPS2222, MPS2222A 1.0 +0.5 TJ = 25C 0 VBE(sat) @ IC/IB = 10 0.6 COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) 0.8 1.0 V VBE(on) @ VCE = 10 V 0.4 0.2 0 RVC for VCE(sat) -0.5 -1.0 -1.5 RVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) -2.5 500 1.0 k 0.1 0.2 Figure 11. "On" Voltages 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 6 500 MPS2222, MPS2222A PACKAGE DIMENSIONS TO-92 TO-226AA CASE 29-11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X-X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 7 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE MPS2222, MPS2222A ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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