BAS86
200mW
Small Signal Schottky
Barrier Diodes
50 Volts
Features
• Moisture Sensitivity Level 1
• This diode features low turn-on voltage
• The devices are protected by a PN junction guard ring against
excessive voltage, such as electrostatic discharges
• This diode is also available in a DO-35 case with type designation
BAT86
Rating Rating Unit
VR Continuous Reverse Voltage 50 V
IF Forward DC Current at Tamb=25 ℃ 200(2) mA
IFRM Repetitive Peak Forward Current tp<1s,Tamb=25℃ 500(2) mA
Ptot Power Dissipation at Tamb=65℃ 200(2) mW
RJA Thermal Resistance Junction to Ambient Air
300(2) ℃/W
TJ Junction Temperature 125 ℃
TSTG Storage Temperature -65 to +150 ℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter Min Typ Max Units
V(BR)R Reverse Breakdown Voltage
(IR=10 µAdc Pulsed) 50 --- --- V
VF
Forward Voltage
IF=0.1mA, Pulse test tp<300μs --- 0.200 0.300
IF=1.0mA, Pulse test tp<300μs --- 0.275 0.380
IF=10mA, Pulse test tp<300μs --- 0.365 0.450
IF=30mA, Pulse test tp<300μs --- 0.460 0.600
IF=100mA, Pulse test tp<300μs --- 0.700 0.900
V
IR Leakage Current
(VR=40Vdc) --- 0.2 0.5 µA
Ctot Capacitance
(VR=1.0V, f=1.0MHz) --- --- 8 pF
trr Reverse Recovery Time
(IF=10mA, IR=10mA, Irr=1.0mA) --- --- 5.0 ns
2. Valid provided that electrodes are kept at ambient temperature
MINIMELF
A
B
C
Cathode Mark
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .130 .146 3.30 3.70
B .008 .016 .20 .40
C .055 .059 1.40 1.50
∅
0.105
0.075”
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MCC
Revision: B 2012/01/01
TM
Micro Commercial Components
www.mccsemi.com
1 of 3
Maximum Ratings
Symbol
• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Notes:1. Lead in Glass Exemption Applied, see EU Directive Annex 7(C)-I.
MCC
BAS86
Revision: B 2012/01/01
TM
Micro Commercial Components
www.mccsemi.com
2 of 3
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
Figure 2. Reverse Current vs. Junction Temperature
15827
0
50
100
150
200
250
300
350
400
450
500
25 50 75 100 125 150
Tj- Junction Temperature (°C)
P - Reverse Power Dissipation (mW)
R
- Limit
at 100 %V
PR
R
- Limit
at 80 %V
PR
R
RthJA = 540 K/W
VR= 50 V
1
10
100
1000
10000
25 50 75 100 125 150
15828
I - Reverse Current (µA)
R
T
j
- Junction Temperature (°C)
V
R
=V
RRM
Figure 3. Forward Current vs. Forward Voltage
Figure 4. Diode Capacitance vs. Reverse Voltage
15829
0 0.5 1.0 1.5
0.1
1
10
100
1000
I- Forward Current (A)
F
VF- Forward Voltage (V)
Tj= 25 °C
Tj= 125 °C
15830
0
1
2
3
4
5
6
7
8
9
10
0.1 1 10 100
f = 1 MHz
VR- Reverse Voltage (V)
C - Diode Capacitance (pF)
D
MCC
Revision: B 2012/01/01
TM
Micro Commercial Components
www.mccsemi.com
3 of 3
Device Packing
Part Number-TP Tape&Reel: 2.5Kpcs/Reel
Ordering Information :
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