2Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4. On/off-state
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown
voltage VGS = 0 V, ID = 1 mA 650 V
IDSS Zero gate voltage drain
current
VGS = 0 V, VDS = 650 V 1 µA
VGS = 0 V, VDS = 650 V
TC = 125 °C (1) 100 µA
IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
RDS(on) Static drain-source
on-resistance VGS = 10 V, ID = 2 A 1 1.25 Ω
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
- 270 - pF
Coss Output capacitance - 14.5 - pF
Crss Reverse transfer capacitance - 0.8 - pF
Coss eq. (1) Equivalent capacitance
energy related VDS = 0 to 520 V, VGS = 0 V - 108 - pF
RgIntrinsic gate resistance f = 1 MHz open drain - 7 - Ω
QgTotal gate charge VDD = 520 V, ID = 5 A
VGS = 0 to 10 V
(see Figure 14. Test circuit for
gate charge behavior )
- 9 - nC
Qgs Gate-source charge - 2.3 - nC
Qgd Gate-drain charge - 4.3 - nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDS.
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD = 325 V, ID = 2.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13. Test circuit for
resistive load switching times
and Figure 18. Switching time
waveform)
- 7.7 - ns
trRise time - 20 - ns
td(off) Turn-off delay time - 19.5 - ns
tfFall time - 30 - ns
STL8N65M2
Electrical characteristics
DS13016 - Rev 1 page 3/15