©2002 Fairchild Semiconductor Corporation Rev. A1, June 2002
MPSA27/PZTA27
Absolute Maximum Ratings* TA=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted
Thermal Charac teris tics TA=25°C unless otherwise noted
* Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm: mounting pad for the collector lead min. 6cm.
Symbol Parameter Value Units
VCES Collector-Emitter Voltage 60 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 10 V
ICCollector current - Continuous 800 mA
TJ, Tstg Operating and Storage Junction Temperature -55 ~ +150 °C
Symbol Parameter Test Condition M in. Typ. M ax. Units
Off Characteristics
V(BR)CES Collector-E mit ter Breakdown Voltage IC = 100µA, VBE = 0 60 V
V(BR)CBO Collector-B ase Brea kdown Voltage IC = 10µA, IC = 0 60 V
V(BR)EBO Emitter-Base Breakdown Volt age IC = 100µA, IC = 0 10 V
ICBO Collector Cutoff Current VCB = 50V, IE = 0 100 nA
ICES Collector Cutoff Current VCE = 50V, VBE = 0 500 nA
IEBO Emitter Cutoff Current VEB = 10V, IC = 0 100 nA
On Characteristics
hFE DC Current Gain IC = 10mA, VCE = 5.0V
IC = 100mA, VCE = 5.0V 10000
10000
VCE(sat) Collector-Emitter Saturation Voltage IC = 100mA, IB = 0.1mA 1.5 V
VBE(on) Base-Emitter On Voltage IC = 100mA, VCE = 5.0V 2.0 V
Small Signal Characteristics
fTCurrent Gain Bandwidth Product IC = 10mA, VCE = 5.0V,
f = 100MHz 125 MHz
Symbol Parameter Max. Units
MPSA27 *PZTA27
PDTotal Device Dissipation
Derate above 25°C625
5.0 1000
8.0 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 125 °C/W
MPSA27/PZTA27
NPN General Purpose Amplifier
• This device is designed for applications requiring
extremely high current gain at collector currents to
500mA.
• Sourced from process 03.
• See MPSA28 for charac teristics.
1. Base 2. Collector 3. Emitter
12
4
TO-92
1
1. Emitter 2. Base 3. Collector
3
SOT-223
Package Dimensions
MPSA27/PZTA27
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A1, June 2002
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
©2002 Fairchild Semiconductor Corporation Rev. A1, June 2002
MPSA27/PZTA27
Package Demensions (Continued)
Dimensions in Millimeters
3.00 ±0.10
7.00 ±0.30
0.65 ±0.20
0.08MAX
3.50 ±0.20
1.60 ±0.20
(0.46)
(0.89)
(0.60) (0.60)
1.75 ±0.20
0.70 ±0.10
4.60 ±0.25
6.50 ±0.20
(0.95) (0.95)
2.30 TYP
0.25
MAX1.80
0°~10°
+0.10
–0.05
0.06 +0.04
–0.02
SOT-223
©2002 Fairchild Semiconductor Corporation Rev. I1
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