2009. 2. 26 1/4
SEMICONDUCTOR
TECHNICAL DATA MJE13005D
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 4
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION.
Built-in Free wheeling Diode makes efficient anti saturation operation.
Suitable for half bridge light ballast Applications.
Low base drive requirement.
MAXIMUM RATING (Ta=25 )
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
TO-220AB
1.46
A
B
C
D
E
F
G
H
J
K
M
N
O
0.8 0.1
+
_
2.8 0.1
+
_
2.54 0.2
+
_
1.27 0.1
+
_
1.4 0.1
+
_
13.08 0.3
+
_
3.6 0.2
+
_
+
_
9.9 0.2
+
_
9.2 0.2
+
_
4.5 0.2
+
_
2.4 0.2
15.95 MAX
1.3+0.1/-0.05
0.5+0.1/-0.05
3.7
1.5
A
F
B
J
G
K
ML
L
E
I
I
O
C
H
NN
Q
D
Q
P
P
123
123
ELECTRICAL CHARACTERISTICS (Ta=25 )
E
C
B
Equivalent Circui
t
*Pulse Test : Pulse Width = 5mS, Duty cycles 10%
Note : hFE Classification R : 18~27, O : 23~35
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 800 V
Collector-Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 10 V
Collector Current DC IC5A
Pulse ICP 10
Base Current IB2 A
Collector Power Dissipation (Tc=25 ) PC75 W
Junction Temperature Tj150
Storage Temperature Range Tstg -55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Emitter Cut-off Current IEBO VEB=9V, IC=0 - - 10 A
DC Current Gain hFE(1) VCE=5V, IC=1A 18 - 35
hFE(2) VCE=5V, IC=2A 8 - -
Collector-Emitter Saturation Voltage VCE(sat)
IC=1A, IB=0.2A - - 0.5
V
IC=2A, IB=0.5A - - 0.6
IC=4A, IB=1A - - 1
Base-Emitter Saturation Voltage VBE(sat) IC=1A, IB=0.2A - - 1.2 V
IC=2A, IB=0.5A - - 1.6
Collector Output Capacitance Cob VCB=10V, f=1MHz - 65 - pF
Transition Frequency fTVCE=10V, IC=0.5A 4 - - MHz
Turn-On Time ton
IB1
150Ω
B1
I
CC
V =300V
IB2
IB2
300µS
IB1=0.4A, IB2=-1A
2%
OUTPUT
DUTY CYCLE
INPUT
<
=
- - 0.15 S
Storage Time tstg 2 - 5 S
Fall Time tf- - 0.8 S
Diode Forward Voltage VFIF=2A - - 1.6 V
*Reverse recovery tims (di/dt=10A/ S) trr
IF=0.4A - 800 - nS
IF=1A - 1.4 - S
IF=2A - 1.9 - S
2009. 2. 26 2/4
MJE13005D
Revision No : 4
COLLECTOR CURRENT IC (A) COLLECTOR-BASE VOLTAGE VCB (V)
COLLECTOR OUTPUT CAPACITANCE COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
DC CURRENT GAIN hFE
VOLTAGE VBE(sat),VCE(sat) (V)
Fig 6. SWITCHING CHARACTERISTIC
1
SWITCHING TIME (µS)
0.1
0.01
0.1
10
COLLECTOR CURRENT IC (A)
1
10
VCC=300V
IC=5IB1,=-2.5IB2
tf
tstg
Cob (pF)
COMMON
EMITTER
Fig 3. hFE - ICFig 4. Cob - VCB
Fig 2. VBE(sat),VCE(sat) - IC
0.01
1
0.1 1
100
Fig 1. hFE - IC
10
10
VCE=1V
0.01
1
0.1 1
100
10
10
VCE=5V
COLLECTOR EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
Fig 5. IC - VCE
0123456789
0
1
2
3
4
5
10
IB=0V
0.01
0.01
0.1 1
10
10
1
0.1
13
1
10 30 100 300 1
k
3
5
10
30
50
100
300
500
1k
f=1MHz
Ta=25 C
IC/IB=4
IB=500mA
IB=400mA
IB=300mA
IB=200mA
IB=100mA
IB=50mA
Ta=125 C
25 C
-20 C
Ta=125 C
25 C
-20 C
VCE(sat)
VBE(sat)
2009. 2. 26 3/4
MJE13005D
Revision No : 4
0
COLLECTOR POWER DISSIPATION PC (W)
0
Fig 10. PC - Ta
COLLECTOR CURRENT IC (A)
Fig 9. SAFE OPERATING AREA
25 50 75 100 125 150 175 200
20
40
60
80
100
Tc=Ta INFINITE HEAT SINK
0.01
COLLECTOR-EMITTER VOLTAGE VCE (V)
10 100 1000
0.1
1
10
100
AMBIENT TEMPERATURE Ta ( C)
FORWARD CURRENT IF (A)
REVERSE RECOVERY TIME trr (µS)
FORWARD DIODE CURRENT IF (A)
FORWARD DIODE VOLTAGE VF (V)
Fig 8. VF - IF
1.0
0.8
1.5 2.0
Fig 7. trr - IF
1.4
1.0
1.2
1.6
0.01 0.1 1
10
10
1
0.1
10µs
1µs
5ms
1ms
DC
COLLECTOR CURRENT IC (pk) (A)
Fig 11. REVERSE BIASED SAFE
OPERATING AREA
0
1
COLLECTOR-EMITTER CLAMP VOLTAGE VCE (V)
0 100 200 300 400 600 800700500 900
2
3
5
4
6
7
8
9
10
I
B1
=2A
V
BE
(off)=-6.5V
L=50 H
V
CC
=20V
2009. 2. 26 4/4
MJE13005D
Revision No : 4
I
B1
V
BB
1) Fast electronic switch
2) Non-inductive resistor
3) Fast recovery rectifier
R
BB(2)
-
+
I
B
V
CE
I
C
V
Clamp
V
CC
L
C
(1)
(3)
T.U.T
REVERSE BIASED SAFE OPERATING AREA TEST CIRCUITS
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter
junction reverse biased.
Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current.
This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse
biased turn-off.
This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
Figure 11 gives the complete RBSOA characteristics.