NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS2222
MPS2222A
TO-92
Plastic Package
General Pur
p
ose Transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL MPS2222 MPS2222A UNITS
Collector Emitter Voltage VCEO 30 40 V
Collector Base Voltage VCBO 60 75 V
Emitter Base Voltage VEBO 56V
Collector Current Continuous IC600 mA
Power Dissipation@ Ta=25ºC PD625 mW
Derate Above 25ºC 5.0 mW/ºC
Power Dissipation@ Tc=25ºC PD1.5 W
Derate Above 25ºC 12 mW/ºC
Operating And Storage Junction Tj, Tstg -55 to +150 ºC
Temperature Range
THERMAL RESISTANCE
Junction to ambient Rth(j-a) 200 ºC/W
Junction to case Rth(j-c) 83.3 ºC/W
Transys
Electronics
LI
M
ITE
D
NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS2222
MPS2222A
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION SYMBOL TEST CONDITION MPS2222 MPS2222A UNITS
Collector Emitter Voltage BVCEO IC=10mA,IB=0 >30 >40 V
Collector Base Voltage BVCBO IC=10µA,IE=0 >60 >75 V
Emitter Base Voltage BVEBO IE=10µA, IC=0 >5 >6 V
Collector Cut off Current ICEX VCE =60V, VBE=3.0V <10 nA
Collector Cut off Current ICBO <0.01 µA
ICBO VCB=50V, IE = 0 <0.01 µA
ICBO VCB=60V, IE = 0 <10 µA
ICBO VCB=50V, IE = 0 <10 µA
Ta= 125ºC
ICBO VCB=60V, IE = 0
Ta= 125ºC
Emitter Cut off Current IEBO VBE=3V, IC = 0 <10 nA
Base Cut off Current IBL VCE=60V,VBE=3.0V <20 nA
DC Current Gain
µ
A
hFE VCE=10V,IC=0.1mA >35 >35
VCE=10V,IC=1mA >50 >50
VCE=10V,IC=10mA >75 >75
VCE=10V,IC=10mA >35
TA = -55 ºC
VCE=10V*,IC=150mA 100-300 100-300
VCE=1V*,IC=150mA >50 >50
VCE=10V*,IC=500mA >30 >40
VBE(sat)* IC=150mA,IB=15mA <1.3 0.6-1.2 V
VBE(sat)* IC=500mA,IB= 50mA <2.6 <2.0 V
VCE(sat)* IC=150mA,IB=15mA <0.4 <0.3 V
IC=500mA,IB=50mA <1.6 <1.0 V
NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS2222
MPS2222A
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION SYMBOL TEST CONDITION MPS2222 MPS2222A UNITS
DYNAMIC CHARACTERISTICS
Transition Frequency fTIC=20mA, VCE=20V
f=100MHz >250 >300 MHz
Output Capacitance Cob IE=0, VCB=10V
f=1MHz <8 PF
Input Capacitance Cib Ic=0, VEB=0.5V
f=1MHz <30 <25 PF
Input Impedance hie IC=1mA, VCE=10V
f=1KHz 2.0-8.0 KW
IC=10mA, VCE=10V
f=1KHz 0.25-1.25 KW
Reverse VoltgeTransfer Ratio hre IC=1mA, VCE=10V
f=1KHz <8 x 10-4
IC=10mA, VCE=10V
f=1KHz <4 x 10-4
Output Admittance hoe IC=1mA, VCE=10V
f=1KHz 5-35 µMHO
IC=10mA, VCE=10V
f=1KHz 25-200 µMHO
Noise Figure NF VCE =10V,IC=100uA
RS=1KOHMS,f=1KHZ<4 dB
Collector Base Time Constant rb' CcVCE =20V,IC=20mA
,f=31.8MHZ<150 ps
Small Signal Current Gain | hfe |V
CE =10V,IC=1mA 50-300
f=1KHZ
VCE =10V,IC=10mA 75-375
f=1KHZ
SWITCHING CHARCTERISTICS SYMBOL TEST CONDITION MPS2222 MPS2222A UNITS
Delay Time/Rise Time tdVCC =30V, VEB =0.5V <10 ns
trIC =150mA, IB1= 15mA <25 ns
Storage Time/Fall Time tsIC =150mA, IB1= IB2 15mA <225 ns
tfVCC =30V <60 ns
*Pulse Condition: = Width < 300us, Duty Cycle < 2%.
MPS2222
MPS2222A
TO-92
Plastic Package
TO-92 Plastic Package
TO-92 Transistors on Tape and Ammo Pack
FF
H
C
3 2 1
All diminsions in mm.
DIM MIN. MAX.
A 4.32 5.33
B 4.45 5.20
C 3.18 4.19
D 0.41 0.55
E 0.35 0.50
F5 DEG
G 1.14 1.40
H 1.14 1.53
2.082
K
L12.70
1.982 —
PIN CONFIGURATION
1. COLLECTOR
2. BASE
3. EMITTER
B
A
L
Solderability Ensured Dimension Wit h 'L'
UncontrolledBe yond 'L'
K
E
DAA SEC AA
G
D
321
1
2
3
CUMUL ATIVE PITCH
ERROR 1.0 mm /20
PITCH
TO BE MEA SURED AT
BOTTOM O F CLINCH
AT TOP OF BODY
t1 0.3 - 0.6
BODY WIDTH
BODY HEIGHT
BODY THICKNESS
PITCH OF COMPONENT
FEED HOLE PITCH
FEED HO LE CENTRE TO
COMP ONENT CENTRE
DISTANCE BETWEEN OUTER
LEADS
COMPONENT ALIGNMENT
TAPE WIDTH
HOLD-D OW N TAPE WIDTH
HOLE POS ITIO N
HOLD-DOWN TAPE POSITION
LEAD WIRE CLINCH HEIGHT
COMPONENT HEIGHT
LENGTH OF SNIPPED LEADS
FEED HOLE DIAMETER
TOTAL TAPE TH ICKNESS
LEAD - TO - LEAD DISTANCEF1,
CLINC H HEIGHT
PULL - OUT FORCE
ITEM
A1
A
T
P
Po
P2
F
h
W
Wo
W1
W2
Ho
H1
L
Do
t
F2
H2
(P)
SYMBOL SPECIFICATION
4.0
4.8
3.9
6N
MIN.
12.7
12.7
6.35
5.08
0
18
6
9
0.5
16
4
2.54
NOM. 4.8
5.2
4.2
1
23.25
11.0
1.2
3
MAX.
±1
±0.3
±0.4
+0.6
-0.2
±0.5
±0.2
+0.7
-0.5
±0.2
±0.5
±0.2
+0.4
-0.1
TOL . REMARKS
NOTES
1. MAXIMUM ALIGNMENT DEVIATION BETWEEN LEADS NOT TO BE GREATER THAN 0.2 mm.
2. MAXIMUM NON-CUMULATIVE VARIATION BETW EEN TAPE FEED HOLES SHALL NOT EXCE ED 1 mm IN 20
PIT CHES.
3. H OLDDOWN TAP E NOT TO EXCEED BEYO ND THE EDGE (S) OF CARRIER TAPE AN D T HERE SHALL BE NO
EXPOSURE OF AD HESIVE.
4. NO MORE THAN 3 CONSECUTIVE MISSING COMPONENTS ARE PERMITTED.
5. A TAPE TRAILER, HAVING AT LEAS T THREE FEED HOLES ARE REQUIR ED AFTE R T HE LAST COM PONENT.
6
.
S
PLI
C
E
S
S
HALL N
O
T INTER FERE WITH THE
S
PR
OC
KET FEED H
O
LE
S
.
All dimensio ns in mm unless s pec ifie d otherw is e
Ammo Pack
S
t
y
le
Adhesive Tape on Top Side
FLAT SIDE
ME CHA NI CA L DATA
T
t1
tF1 F2
F
P2Po
Do
(p)
W2
Wo W1 W
H1
A
A1
P
H0
L
Flat Side of Transistor and
Adhesive Tape Visi ble
2000 pc s./Ammo Pack
LABEL
Carrier
Strip
183
mm
331
mm
FEED
42
mm
hh
TO-92 B ulk
TO-92 T&A 1K/polybag
2K/ammo box 200 gm/1K pcs
645 gm/2K pcs 3" x 7.5" x 7.5"
12.5 " x 8" x 1.8" 5K
2K 17" x 15" x 13.5"
17" x 15" x 13.5" 80K
32K 23 kgs
12.5 kgs
PACKAGE
Net Weight/Qty
Details
STANDARD PACK INNER CARTON BOX
Qty
OUTER CARTON BOX
Qty Gr WtSize Size
P
ac
ki
ng
D
eta
il
