2N3811L Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: * General purpose * Matched Dual transistors * PNP silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N3811LJ) * JANTX level (2N3811LJX) * JANTXV level (2N3811LJV) * JANS level (2N3811LJS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request Features * * * * Hermetically sealed TO-77 metal can Also available in chip configuration Chip geometry 0220 Reference document: MIL-PRF-19500/336 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 60 Collector-Base Voltage VCBO 60 Unit Volts Volts Emitter-Base Voltage VEBO 5 Volts IC 50 300 one section 600 both sections 1.71 one section 3.43 both sections mA Collector Current, Continuous Power Dissipation, TA = 25C PT Derate linearly above 25C Operating Junction Temperature Storage Temperature Copyright 2002 Rev. G mW mW/C TJ -65 to +200 C TSTG -65 to +200 C Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 1 2N3811L Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current V(BR)CEO ICBO1 ICBO2 ICBO3 IEBO1 IEBO2 Test Conditions IC = 100 A VCB = 60 Volts VCB = 50 Volts VCB = 50 Volts, TA = 150C VEB = 5 Volts VEB = 4 Volts On Characteristics Typ Max Units Volts 10 10 10 10 10 A nA A A nA 60 Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 DC Current Gain hFE3-1/hFE3-2 Base-Emitter Voltage Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Copyright 2002 Rev. G Min VBE |VBE1-VBE2|1 |VBE1-VBE2|2 |VBE1-VBE2|3 VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 1 A, VCE = 5 Volts IC = 10 A, VCE = 5 Volts IC = 100 A, VCE = 5 Volts IC = 1 mA, VCE = 5 Volts IC = 10 mA, VCE = 5 Volts IC = 100 A, VCE = 5 Volts TA = -55C IC = 100 A, VCE = 5 Volts VCE = 5 Volts, IC = 100 A VCE = 5 Volts, IC = 10 A VCE = 5 Volts, IC = 100 A VCE = 5 Volts, IC = 10 mA IC = 100 A, IB = 10 A IC = 1 mA, IB = 100 A IC = 100 A, IB = 10 A IC = 1 mA, IB = 100 A Min Typ 75 225 300 300 250 100 0.9 Max Units 900 900 1.0 0.7 5 3 5 0.7 0.8 0.20 0.25 Volts mVolts mVolts mVolts Volts Volts Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2 2N3811L Silicon PNP Transistor Data Sheet Dynamic Characteristics Parameter Symbol Short Circuit Input Impedance hie Test Conditions VCE = 5 Volts, IC = 500 A, f = 30 MHz VCE = 5 Volts, IC = 1 mA, f = 100 MHz VCE = 10 Volts, IC = 1 mA, f = 1 kHz VCB = 5 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCE = 10 Volts, IC = 100 A, Rg = 3 k f = 100 Hz f = 1 kHz f = 10 kHz VCE = 10 Volts, IC = 100 A, Rg = 3 k 10 Hz < f < 15.7 kHz VCB =10V, IC =1mA, f =1kHz Open Circuit Output Admittance hoe VCB =10V, IC =1mA, f =1kHz Open Circuit reverse Voltage Transfer Ratio hre VCB =10V, IC=100A, f=1kHz Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio |hFE1| |hFE2| hFE Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO Noise Figure NF1 NF2 NF3 Noise Figure (wideband) Copyright 2002 Rev. G NF Min Typ Max Units 1 1 5 300 900 5 pF 8 pF 4 1.5 2 dB 2.5 dB 3 40 k 5 60 25x10 -4 Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 3 of 3