BT151-500R
SCR, 12 A, 15mA, 500 V, SOT78
Rev. 05 — 2 March 2009 Product data sheet
1. Product profile
1.1 General description
Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.
1.2 Features and benefits
High reliability
High surge current capability
High thermal cycling performance
1.3 Applications
Ignition circuits
Motor control
Protection Circuits
Static switching
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak
off-state voltage - - 500 V
IT(AV) average on-state
current half sine wave;
Tmb ≤109 °C; see Figure 3 --7.5A
IT(RMS) RMS on-state
current half sine wave;
Tmb ≤109 °C; see Figure 1;
see Figure 2
--12A
Static characteristics
IGT gate trigger current VD=12V; T
j=25°C;
IT=100mA; see Figure 8 -215mA
BT151-500R_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 2 March 2009 2 of 11
NXP Semiconductors BT151-500R
SCR, 12 A, 15mA, 500 V, SOT78
2. Pinning information
3. Ordering information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
SOT78
(TO-220AB; S C - 4 6 )
2 A anode
3G gate
mb mb anode
12
mb
3
sym037
AK
G
Table 3. O r dering info rmation
Type number Package
Name Description Version
BT151-500R TO-220AB;
SC-46 plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB SOT78
BT151-500R_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 2 March 2009 3 of 11
NXP Semiconductors BT151-500R
SCR, 12 A, 15mA, 500 V, SOT78
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maxi mum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state
voltage -500V
VRRM repetitive peak reverse
voltage -500V
IT(AV) average on-state
current half sine wave; Tmb ≤109 °C; see Figure 3 -7.5A
IT(RMS) RMS on-state current half sine wave; Tmb ≤109 °C; see Figure 1; see
Figure 2 -12A
dIT/dt rate of rise of on-state
current IT=20A; I
G=50mA; dI
G/dt = 50 mA/µs - 50 A/µs
IGM peak gate current - 2 A
PGM peak gate pow e r - 5 W
Tstg storage temperature -40 150 °C
Tjjunction temperature - 125 °C
ITSM non-repetitive peak
on-state current half sine wave; tp= 8.3 ms; Tj(init) =25°C - 132 A
half sine wave; tp= 10 ms; Tj(init) =25°C; see
Figure 4; see Figure 5 -120A
I2t I2t for fusing tp= 10 ms; sine-wave pulse - 72 A2s
PG(AV) average gate power over any 20 ms period - 0.5 W
VRGM peak reverse gate
voltage -5V
Fig 1. RMS on-state current as a function of surge
duration; maximum values
Fig 2. RMS on-state current as a function of mounting
base temperature; maximum values
surge duration (s)
10−210110−1
001aaa954
10
15
5
20
25
IT(RMS)
(A)
0
Tmb (°C)
−50 150100050
001aaa999
8
4
12
16
IT(RMS)
(A)
0
BT151-500R_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 2 March 2009 4 of 11
NXP Semiconductors BT151-500R
SCR, 12 A, 15mA, 500 V, SOT78
Fig 3. T otal po wer dissipation as a function of average on-state current; maximum values
Fig 4. Non-repetitive peak on-state current as a function of pulse width fo r sinuso idal cu rrents; maxim um valu es
IT(AV) (A)
0 8642
003aab830
5
10
15
Ptot
(W)
0
4
2.8
2.2
1.9
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
a = 1.57
001aaa956
tp (s)
10−510−2
10−3
10−4
102
103
ITSM
(A)
10
dlT/dt limit
tp
Tj initial = 25 °C max
ITITSM
t
BT151-500R_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 2 March 2009 5 of 11
NXP Semiconductors BT151-500R
SCR, 12 A, 15mA, 500 V, SOT78
5. Thermal characteristics
Fig 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aab829
80
40
120
160
ITSM
(A)
0
number of cycles
1 103
102
10
tp
Tj initial = 25 °C max
ITITSM
t
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from
junction to mounting
base
see Figure 6 --1.3K/W
Rth(j-a) thermal resistance from
junction to ambient f ree
air
-60-K/W
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width
001aaa962
10−1
10−2
1
10
Zth(j-mb)
(K/W)
10−3
tp (s)
10−511010−1
10−2
10−410−3
tp
tp
T
P
t
T
δ =
BT151-500R_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 2 March 2009 6 of 11
NXP Semiconductors BT151-500R
SCR, 12 A, 15mA, 500 V, SOT78
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
IGT gate trigger current VD=12V; T
j=25°C; I
T= 100 mA; see
Figure 8 -215mA
ILlatching current VD=12V; T
j=25°C; see Figure 9 -1040mA
IHholding current VD=12V; T
j=25°C; see Figure 10 -720mA
VTon-state voltage IT=23A; T
j= 25 °C; see Figure 11 - 1.4 1.75 V
VGT gate trigger voltage IT= 100 mA; VD=12V; T
j= 25 °C; see
Figure 12 -0.61.5V
IT= 100 mA; VD=500V; T
j= 125 °C 0.25 0.4 - V
IDoff-state current VD=500 V; T
j= 125 °C - 0.1 0.5 mA
IRreverse current VR=500V; T
j= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage VDM =335V; T
j= 125 °C; exponential
waveform; gate open circuit 50 130 - V/µs
VDM =335V; T
j=125°C; R
GK = 100 Ω;
exponential waveform; see Figure 7 200 1000 - V/µs
tgt gate-controlled turn-on
time ITM =40A; V
D= 500 V; IG= 100 mA;
dIG/dt = 5 A/µs; Tj=25°C -2-µs
tqcommutated turn-off
time VDM =335V; T
j=125°C; I
TM =20A;
VR=25V; (dI
T/dt)M=30A/µs;
dVD/dt = 50 V/µs; RGK = 100 Ω
-70-µs
Fig 7. Critical rate of rise of off-s tat e voltag e as a
function of junction tempera tu re; minimu m
values
Fig 8. Normalized gate trigger current as a fun ction of
junction temperature
001aaa949
103
102
104
dVD/dt
(V/μs)
10
Tj (°C)
0 15010050
(2)
(1)
Tj (°C)
−50 150100050
001aaa952
1
2
3
0
IGT
IGT(25°C)
BT151-500R_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 2 March 2009 7 of 11
NXP Semiconductors BT151-500R
SCR, 12 A, 15mA, 500 V, SOT78
Fig 9. Normalized latching current as a function of
junction temperature Fig 10. Normalized holding current as a function of
junction temperature
Fig 11. On-state current as a function of on-state
voltage
Fig 12. Normalized gate tri gger voltage as a function of
junction temperature
Tj (°C)
−50 150100050
001aaa951
1
2
3
0
IL
IL(25°C)
Tj (°C)
−50 150100050
001aaa950
1
2
3
IH
IH(25°C)
0
VT (V)
021.50.5 1
001aaa959
10
20
30
IT
(A)
0
(3)(2)(1)
Tj (°C)
−50 150100050
001aaa953
0.8
1.2
1.6
0.4
VGT
VGT(25°C)
BT151-500R_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 2 March 2009 8 of 11
NXP Semiconductors BT151-500R
SCR, 12 A, 15mA, 500 V, SOT78
7. Package outline
Fig 13. Package outline SOT78 (TO-220AB)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT78 SC-46
3-lead TO-220AB
SOT78
08-04-23
08-06-13
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
UNIT A
mm 4.7
4.1
1.40
1.25
0.9
0.6
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0
12.8
3.30
2.79
3.8
3.5
A1
DIMENSIONS (mm are the original dimensions)
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
0 5 10 mm
scale
b b1(2)
1.6
1.0
c D
1.3
1.0
b2(2) D1E e
2.54
L L1(1) L2(1)
max.
3.0
p q
3.0
2.7
Q
2.6
2.2
D
D1
q
p
L
123
L1(1)
b1(2)
(3×)
b2(2)
(2×)
ee
b(3×)
AE
A1
c
Q
L2(1)
mounting
base
BT151-500R_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 2 March 2009 9 of 11
NXP Semiconductors BT151-500R
SCR, 12 A, 15mA, 500 V, SOT78
8. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BT151-500R_5 20090302 Product data sheet - BT151_SER_L_R_4
Modifications: •Package outline updated.
•Type number BT151-500R separated from data sheet BT151_SER_L_R_4.
BT151_SER_L_R_4 20061023 Product data sheet - BT151_SERIES_3
BT151_SERIES_3 (9397
750 13159) 20040607 Product specification - BT151_SERIES_2
BT151_SERIES_2 19990601 Product specification - BT151_SERIES_1
BT151_SERIES_1 19970901 Product specification - -
BT151-500R_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 2 March 2009 10 of 11
NXP Semiconductors BT151-500R
SCR, 12 A, 15mA, 500 V, SOT78
9. Legal information
9.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The la test product
status information is available on the Internet at URL http://www.nxp.com.
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warrant ies as to t he accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extr act from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
9.3 Disclaimers
General — Information in this document is believed to be accurate an d
reliable. However, NXP Semiconductors does not give an y represent ations or
warranties, expressed or impli ed, as to the accuracy or completeness of such
information and shall have no liability for th e co nsequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for il lustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Rati ngs System of I EC 60134) may cause perman ent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other co nditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may af fect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between inf ormation in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
9.4 Trademarks
Notice: All refe renced brands, produc t names, service names and trademarks
are the property of their respective ow ners.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status [1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
NXP Semiconductors BT151-500R
SCR, 12 A, 15mA, 500 V, SOT78
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 2 March 2009
Document identifier: BT151-500R_5
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8
8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .9
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .10
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10
9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .10
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10
10 Contact information. . . . . . . . . . . . . . . . . . . . . .10
