MMBT4403 - Rectron Semiconductor Inc.

FEATURES

*

Power dissipation

PCM: 0.3 W(Tamb=25OC)

Collector current

ICM: 0.6 A

Collector-base voltage

V(BR)CBO: - 40 V

Operating and storage junction temperature range

TJ,Tstg: -55OC to+150OC

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-O rate flame retardant

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

* Weight: 0.008 gram

SOT-23

MMBT4403

2007-5

ELECTRICAL CHARACTERISTICS ( @ TA = 25OC unless otherwise noted)

MAXIMUM TATINGES ( @ TA = 25OC unless otherwise noted)

Notes :

CHARACTERISTICS SYMBOL UNITS

417

oC/WThermal Resistance Junction to Ambient

RATINGS

Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25OC

Max. Operating Temperature Range

Storage Temperature Range

SYMBOL

PD

TJ

TSTG

R qJA

VALUE

MAX.

-

TYP.

-

MIN.

UNITS

mW

300

1. Alumina=0.4*0.3*0.024in.99.5% alumina

2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)".

150

-55 to +150

oC

SOT-23 BIPOLAR TRANSISTORS

TRANSISTOR(PNP)

-

Dimensions in inches and (millimeters)

0.118(3.00)

0.012(0.30)

0.020(0.50)

0.003(0.08)

0.006(0.15)

0.110(2.80)

0.019(2.00)

0.071(1.80)

0.100(2.55)

0.089(2.25)

0.020(0.50)

0.012(0.30)

0.043(1.10)

0.035(0.90)

0.004(0.10)

0.000(0.00)

1

3

BASE

EMITTER

COLLECTOR

2

1

3

2

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

0.047(1.20)

0.055(1.40)

ELECTRICAL CHARACTERISTICS

(@TA=25OC unless otherwise noted)

OFF CHARACTERISTICS

ON CHARACTERISTICS (1)

Chatacteristic

Collector-Emitter Breakdown Voltage(1) (IC= -1.0 mAdc, IB= 0)

Collector-Base Breakdown Voltage (IC= -0.1mAdc, IE= 0)

Emitter-Base Breakdown Voltage (IE= -0.1mAdc, IC= 0)

Base Cutoff Current (VCE= -35Vdc, VBE(off)= -0.4Vdc)

Collector Cutoff Current (VCE= -35Vdc, VEB= -0.4Vdc)

DC Current Gain (IC= -0.1mAdc, VCE= -1.0Vdc)

(IC= -10mAdc, VCE= -1.0Vdc)

(IC= -1.0mAdc, VCE= -1.0Vdc)

V(BR)CEO -40 - Vdc

V(BR)CBO -40 - Vdc

V(BR)EBO -5.0 - Vdc

ICEX

IBEV - -0.1

- -0.1

hFE

30 -

-

60 -

100 -

100 300

uAdc

Symbol Min Max Unit

(IC= -150mAdc, VCE= -2.0Vdc)

Collector-Emitter Saturation Voltage (1) (IC= -150mAdc, IB= -15mAdc)

(IC= -500mAdc, IB= -50mAdc)

(IC= -500mAdc, VCE= -2.0Vdc)

Vdc

VCE(sat)

20 -

- -0.4

- -0.75

Vdc

VBE(sat)

-0.75 -0.95

- -1.3

Base-Emitter Saturation Voltage (1) (IC= -150mAdc, IB= -15mAdc)

(IC= -500mAdc, IB= -50mAdc)

SMALL-SIGNAL CHARACTERISTICS

SWITCHING CHARACTERISTICS

fT200 - MHz

Current-Gain-Bandwidth Product (IC= -20mAdc, VCE= -10Vdc, f= 100MHz)

Ccb

Ceb

- 8.5 pF

pF

td

tr

ts

tf

-

ns

hie

- 30

1.5 15 kohms

hre 0.1 8.0

60 500

X 10-

4

hfe

1.0 100

-

hoe

225

30

15

20

umhos

Output Capacitance (VCB= -10Vdc, IE= 0, f= 1.0MHz)

Input Capacitance (VEB= -0.5Vdc, IC= 0, f= 1.0MHz)

Voltage Feedback Ratio (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)

Output Admittance (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)

(VCC= -30Vdc, VEB= -2.0Vdc, IC= -150mAdc, IB1= -15mAdc)

(VCC= -30Vdc, IC= -150mAdc, IB1= IB2= -15mAdc)

Input lmpedance (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)

Small-Signal Current Gain (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)

Delay Time

Rise Time

Storage Time

Fall Time

Note : Pulse Test: Pulse Width<300ms,Duty Cycle<2.0%

--

RATING AND CHARACTERISTICS CURVES ( MMBT4403 )

Figure 1. Capacitances

3.0

5.0

7.0

10

30

2.0

20

Figure 3. Turn-On Time

Figure 5. Storage Time

10

20

30

50

70

100

7.0

5.0

300

200

100

70

50

30

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10 20 30

10 20 30 50 70 100 200 300 500

CAPACITANCE (pF)

ts',STORAGE TIME (ns)

t, TIME (ns)

Q, CHARGE (nC)

REVERSE VOLTAGE (V)

IC,COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

IC,COLLECTOR CURRENT (mA)

Figure 4. Rise Times

10

20

30

50

70

100

7.0

5.0

10 20 30 50 70 100 200 300 500

IC,COLLECTOR CURRENT (mA)

10 20 30 50 70 100 200 300 500

Figure 2. Charge Data

0.2

0.3

0.5

0.7

1.0

10

0.1

2.0

3.0

5.0

7.0

25

O

C 100

O

C

VCC=30V

IC/IB=10

Ceb

QT

QA

Ccb

VCC=30V

tr @ VCC= 30V

tr @ VCC= 10V

td@ VBE(off)= 2V

td @ VBE(off)= 0V

IC/IB=10

IC/IB=20

IB1= IB2

t

s' =

t

s -1/8tf

RATING AND CHARACTERISTICS CURVES ( MMBT4403 )

10

8.0

6.0

4.0

2.0

0

300

30

10

20

hie, INPUT IMPEDANCE (OHMS)

hoe, OUTPUT ADMITTANCE (

umhos

)

hre, VOLTAGE FEEDBACK RATIO (X 10-4)

500

700

1000

200

100

70

50

1k

2k

5k

10k

20k

50k

100k

500

200

100

5.0

2.0

0.5

1.0

0.2

0.1

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k

100

500

50

20

10

5.0

2.0

1.0

NF, NOISE FIGURE (dB)hfe, CURRENT GAIN

NF,NOISE FIGURE (dB)

Figure 6.Frequency Effects

IC, COLLECTOR CURRENT (mAdc)IC, COLLECTOR CURRENT (mAdc)

Figure 8.Cuttent Gain Figure 9.Input Impedance

RS, SOURCE RESISTANCE (OHMS)

Figure 7.Source Resistance Effects

IC, COLLECTOR CURRENT (mAdc)IC, COLLECTOR CURRENT (mAdc)

Figure 11.Temperature CoefficientsFigure 10.Voltage Feedback Ratio

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

f, FREQUENCY (KHz)

4

6

8

10

2

0

0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

IC = 1.0mA, RS = 430

W

VCE = -10Vdc, TA = 25OC

Bandwidth = 1.0Hz

IC = 500

u

A, RS = 560

W

IC = 50

u

A, RS = 2.7k

W

IC = 100

u

A, RS = 1.6k

W

RS = OPTIMUM SOURCE RESISTANCE

f = 1 kHz

MMBT4403 UNIT 1

MMBT4403 UNIT 2

IC = 50

u

A

100

uA

500uA

1.0mA

MMBT4403 UNIT 1

MMBT4403 UNIT 2

MMBT4403 UNIT 1

MMBT4403 UNIT 2

MMBT4403 UNIT 1

MMBT4403 UNIT 2

RATING AND CHARACTERISTICS CURVES ( MMBT4403 )

Figure 12. DC Current Gain

Figure 13. Collector Saturation Region

Figure 14. "ON" Voltages Figure 15. Temperature Coefficients

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500

0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50

0.1 0..2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0..2 0.5 1.0 2.0 5.0 10 20 50 100 200 500

hFE, NORMALIZED CURRENT GAIN

VCE, COLLECTOR - EMITTER VOLTAGE (V)

VOLTAGE (V)

COEFFICIENT (mV/OC)

IC, COLLECTOR CURRENT (mA)

IB, BASE CURRENT (mA)

IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0

0.3

0.5

0.7

1.0

3.0

0.2

2.0

0.4

0.6

0.8

1.0

0.2

0

0.5

0

0.5

1.0

1.5

2.0

2.5

IC = 1.0 mA 10 mA 100 mA

TJ = 125OC

VCE = 1.0V

VCE = 10V

VBE(sat)@IC/IB = 10 QVC for VCE(sat)

500 mA

25OC

-55OC

TJ = 25OC

VBE(sat)@VCE = 10V

VCE(sat)@IC/IB = 10

QVS for VBE

Rectron Inc reserves the right to make changes without notice to any product

specification herein, to make corrections, modifications, enhancements or other

changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-

lity for any errors or inaccuracies. Data sheet specifications and its information

contained are intended to provide a product description only. "Typical" paramet-

ers which may be included on RECTRON data sheets and/ or specifications ca-

n and do vary in different applications and actual performance may vary over ti-

me. Rectron Inc does not assume any liability arising out of the application or

use of any product or circuit.

Rectron products are not designed, intended or authorized for use in medical,

life-saving implant or other applications intended for life-sustaining or other rela-

ted applications where a failure or malfunction of component or circuitry may di-

rectly or indirectly cause injury or threaten a life without expressed written appr-

oval of Rectron Inc. Customers using or selling Rectron components for use in

such applications do so at their own risk and shall agree to fully indemnify Rect-

ron Inc and its subsidiaries harmless against all claims, damages and expendit-

ures.

DISCLAIMER NOTICE