5-1
Semiconductor
Features
• 25A and 28A, 80V and 100V
•r
DS(ON) = 0.077Ω and 0.100Ω
• Single Pulse Avalanche Energy Rated
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17421.
Symbol
Packaging
JEDEC TO-220AB JEDEC TO-262AA
JEDEC TO-263AB
Ordering Information
PART NUMBER PA CKAGE BRAND
IRF540 TO-220AB IRF540
IRF541 TO-220AB IRF541
IRF542 TO-220AB IRF542
IRF543 TO-220AB IRF543
RF1S540 TO-262AA RF1S540
RF1S540SM TO-263AB RF1S540SM
NO TE: When ordering, use the entire part number . Add the suffix 9A to
obtain the T O-263AB v ariant in the tape and reel, i.e., RF1S540SM9A.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
GATE
SOURCE
November 1997
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997 File Number 2309.3
IRF540, IRF541, IRF542,
IRF543, RF1S540, RF1S540SM
25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm,
N-Channel Power MOSFETs
5-2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF540, RF1S540,
RF1S540SM IRF541 IRF542 IRF543 UNITS
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS 100 80 100 80 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR 100 80 100 80 V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID28
20 28
20 25
17 25
17 A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM 110 110 100 100 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .PD150 150 150 150 W
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . .EAS 230 230 230 230 mJ
Operating and Storage Temperature . . . . . . . . . . . .TJ, TSTG -55 to 175 -55 to 175 -55 to 175 -55 to 175 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg 300
260 300
260 300
260 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to TJ = 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 10)
IRF540, IRF542,
RF1S540, RF1S540SM 100 - - V
IRF541, IRF543 80 - - V
Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA2-4V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V
TJ = 150oC- - 250 µA
On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = 10V
(Figure 7)
IRF540, IRF541,
RF1S540, RF1S540SM 28 - - A
IRF542, IRF543 25 - - A
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 17A, VGS = 10V (Figures 8, 9)
IRF540, IRF541,
RF1S540, RF1S540SM - 0.060 0.077 Ω
IRF542, IRF543 - 0.080 0.100 Ω
Forward Transconductance (Note 2) gfs VDS ≥ 50V, ID = 17A (Figure 12) 8.7 13 - S
Turn-On Delay Time td(ON) VDD = 50V,ID≈ 28A, RG≈ 9.1Ω, RL = 1.7Ω
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
-1523 ns
Rise Time tr- 70 110 ns
Turn-Off Delay Time td(OFF) -4060 ns
Fall Time tf-5075 ns
Total Gate Charge
(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 28A, VDS = 0.8 x Rated
BVDSS, Ig(REF) = 1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of Op-
erating Temperature
-3859nC
Gate to Source Charge Qgs -8 -nC
Gate to Drain “Miller” Charge Qgd -21 - nC
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
5-3
Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz
(Figure 11) - 1450 - pF
Output Capacitance COSS - 550 - pF
Reverse Transfer Capacitance CRSS - 100 - pF
Internal Drain Inductance LDMeasured From the
Contact Screw on Tab
To Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
- 3.5 - nH
Measured From the
Drain Lead, 6mm
(0.25in) from Package to
Center of Die
- 4.5 - nH
Internal Source Inductance LSMeasured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
- 7.5 - nH
Thermal Resistance Junction to Case RθJC --1
o
C/W
Thermal Resistance
Junction to Ambient RθJA Free Air Operation - - 80 oC/W
RθJA RF1S540SM Mounted on FR-4 Board with
Minimum Mounting Pad --62
o
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current ISD Modified MOSFET Sym-
bol Showing the Integral
Reverse
P-N Junction Diode
- - 28 A
Pulse Source to Drain Current
(Note 3) ISDM - - 110 A
Source to Drain Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 27A, VGS = 0V (Figure 13) - - 2.5 V
Reverse Recovery Time trr TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs 70 150 300 ns
Reverse Recovery Charge QRR TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs 0.44 1.0 1.9 µC
NOTES:
2. Pulse test: pulse width ≤300µs, duty cycle ≤2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ= 25oC, L = 440µH, RG= 25Ω, peak IAS = 28A. (Figures 15, 16).
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
LS
LD
G
D
S
G
D
S
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
5-4
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED PO WER DISSIPATION vs CASE
TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS
TC, CASE TEMPERATURE (oC)
25 50 75 100 125 150 175
0
POWER DISSIPATION MULTIPLIER
0
0.2
0.4
0.6
0.8
1.0
1.2
12
6
025 50 75 100 125 150
24
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
30
175
18
IRF542, IRF543
IRF540, IRF541
RF1S540, RF1S540SM
t1, RECTANGULAR PULSE DURATION (s) 10
ZθJC, TRANSIENT
10-3 10-2 10-1 1
1
10-5 10-4
10
0.01
0.1
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
PDM
t1
t2
0.1
0.02
0.2
0.5
0.01
0.05
SINGLE PULSE
THERMAL IMPEDANCE (oC/W)
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
1
10
1
ID, DRAIN CURRENT (A)
100
100
LIMITED BY rDS(ON)
AREA MAY BE
OPERATION IN THIS
TJ = MAX RATED
SINGLE PULSE
IRF540, 1, RF1S540, SM
IRF542, 3
IRF542, 3
IRF541, 3 DC
100µs
10µs
1ms
IRF540, 2
RF1S540, SM
10ms
IRF540, 1, RF1S540, SM
TC = 25oC
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
0012243648
10
20
30
40
50
60
VGS = 7V
VGS = 5V
VGS = 4V
80µs PULSE TEST
VGS = 10V
VGS = 8V
VGS = 6V
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
5-5
FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN T O SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN T O SOURCE BREAKDO WN
VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
10
01.0 2.0 3.0 5.0
20
30
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 6V
VGS = 10V
40
4.0
VGS = 4V
VGS = 7V
VGS = 5V
50
VGS = 8V
80µs PULSE TEST
0468102
0.1
1
10
ID(ON), ON-STATE DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
100
25oC
175oC
VDS ≥ 50V
80µs PULSE TEST
DUTY CYCLE = 0.5% MAX
0
0.4
0.6
0.8
25 50 75 100
rDS(ON), DRAIN TO SOURCE
ID, DRAIN CURRENT (A)
125
1.0
0
0.2 VGS = 10V
VGS = 20V
80µs PULSE DURATION
ON RESISTANCE (Ω)
NORMALIZED DRAIN TO SOURCE
3.0
1.8
1.2
0.6
0.0
-60 -40 -20 0 20 40 60
TJ, JUNCTION TEMPERATURE (oC)
100 120 140 160 180
2.4
80
VGS = 10V, ID = 28A
ON RESISTANCE
1.25
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60
TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
100 120 140 160 180
1.15
80
ID = 250µA3000
600
0110 100
C, CAPACITANCE (pF)
1800
VDS, DRAIN TO SOURCE VOLTAGE (V)
2400
1200
CISS
COSS
CRSS
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
VGS = 0V, f = 1MHz
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
5-6
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
25oC
ID, DRAIN CURRENT (A)
gfs, TRANSCONDUCTANCE (S)
0010203040
4
8
12
16
20
50
175oC
VDS ≥50V, 80µs PULSE TEST
01.2 1.8 2.4 3.00.6
1
10
100
ISD, SOURCE TO DRAIN CURRENT (A)
VSD, SOURCE TO DRAIN VOLTAGE (V)
1000
25oC
175oC
Qg, TOTAL GATE CHARGE (nC)
VGS, GATE TO SOURCE VOLTAGE (V)
0012243648
4
8
12
16
20
60
ID = 28A
VDS = 50V
VDS = 80V
VDS = 20V
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
5-7
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS
tP
VGS
0.01Ω
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
0
VGS
RL
RG
DUT
+
-VDD
tON
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
0
0
0.3µF
12V
BATTERY 50kΩ
VDS
S
DUT
D
G
Ig(REF)
0
(ISOLATED
VDS
0.2µF
CURRENT
REGULATOR
ID CURRENT
SAMPLING
IG CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
SAME TYPE
AS DUT
Qg(TOT)
Qgd
Qgs
VDS
0
VGS
VDD
IG(REF)
0
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
