IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Semiconductor 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs November 1997 Features Description * 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. * rDS(ON) = 0.077 and 0.100 * Single Pulse Avalanche Energy Rated * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER PACKAGE Formerly developmental type TA17421. Symbol BRAND D IRF540 TO-220AB IRF540 IRF541 TO-220AB IRF541 IRF542 TO-220AB IRF542 IRF543 TO-220AB IRF543 RF1S540 TO-262AA RF1S540 RF1S540SM TO-263AB RF1S540SM G S NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S540SM9A. Packaging JEDEC TO-220AB JEDEC TO-262AA SOURCE DRAIN GATE DRAIN (FLANGE) SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1997 5-1 File Number 2309.3 IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg IRF540, RF1S540, RF1S540SM 100 100 28 20 110 20 150 1 230 -55 to 175 IRF541 80 80 28 20 110 20 150 1 230 -55 to 175 IRF542 100 100 25 17 100 20 150 1 230 -55 to 175 IRF543 80 80 25 17 100 20 150 1 230 -55 to 175 UNITS V V A A A V W W/oC mJ oC 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to TJ = 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP MAX UNITS IRF540, IRF542, RF1S540, RF1S540SM 100 - - V IRF541, IRF543 80 - - V VGS = VDS, ID = 250A 2 - 4 V VDS = Rated BVDSS, VGS = 0V - - 25 A VDS = 0.8 x Rated BVDSS, VGS = 0V TJ = 150oC - - 250 A 28 - - A 25 - - A - - 100 nA IRF540, IRF541, RF1S540, RF1S540SM - 0.060 0.077 IRF542, IRF543 - 0.080 0.100 8.7 13 - S - 15 23 ns - 70 110 ns - 40 60 ns - 50 75 ns - 38 59 nC - 8 - nC - 21 - nC Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) SYMBOL BVDSS VGS(TH) IDSS ID(ON) IRF540, IRF541, RF1S540, RF1S540SM TEST CONDITIONS ID = 250A, VGS = 0V (Figure 10) VDS > ID(ON) x rDS(ON) MAX, VGS = 10V (Figure 7) IRF542, IRF543 Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) IGSS rDS(ON) gfs td(ON) tr td(OFF) VGS = 20V ID = 17A, VGS = 10V (Figures 8, 9) VDS 50V, ID = 17A (Figure 12) VDD = 50V, ID 28A, RG 9.1, RL = 1.7 (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature tf Qg(TOT) Gate to Source Charge Qgs Gate to Drain "Miller" Charge Qgd VGS = 10V, ID = 28A, VDS = 0.8 x Rated BVDSS , Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature 5-2 IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Internal Drain Inductance LD TEST CONDITIONS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) Measured From the Contact Screw on Tab To Center of Die Measured From the Drain Lead, 6mm (0.25in) from Package to Center of Die Internal Source Inductance LS Measured From the Source Lead, 6mm (0.25in) From Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D MIN TYP MAX UNITS - 1450 - pF - 550 - pF - 100 - pF - 3.5 - nH - 4.5 - nH - 7.5 - nH - - 1 oC/W LD G LS S Thermal Resistance Junction to Case RJC Thermal Resistance Junction to Ambient RJA Free Air Operation - - 80 oC/W RJA RF1S540SM Mounted on FR-4 Board with Minimum Mounting Pad - - 62 oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode MIN TYP MAX UNITS - - 28 A - - 110 A - - 2.5 V D G S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge VSD TJ = 25oC, ISD = 27A, VGS = 0V (Figure 13) trr TJ = 25oC, ISD = 28A, dISD/dt = 100A/s 70 150 300 ns QRR TJ = 25oC, ISD = 28A, dISD/dt = 100A/s 0.44 1.0 1.9 C NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, starting TJ = 25oC, L = 440H, RG = 25, peak IAS = 28A. (Figures 15, 16). 5-3 IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Unless Otherwise Specified 1.2 30 1.0 24 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 IRF540, IRF541 RF1S540, RF1S540SM 18 IRF542, IRF543 12 6 0.2 0 0 25 0 125 50 75 100 TC , CASE TEMPERATURE (oC) 25 175 150 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZJC, TRANSIENT THERMAL IMPEDANCE (oC/W) 10 1 0.5 PDM 0.2 0.1 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 0.05 0.02 0.01 0.01 10-5 SINGLE PULSE 10-4 10-3 10-2 10-1 1 10 t1, RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE TC = 25oC IRF540, 1, RF1S540, SM 100 50 ID, DRAIN CURRENT (A) IRF542, 3 100s IRF540, 1, RF1S540, SM IRF542, 3 1ms 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) TJ = MAX RATED SINGLE PULSE 1 1 10ms IRF541, 3 DC IRF540, 2 RF1S540, SM ID, DRAIN CURRENT (A) 80s PULSE TEST 10s VGS = 10V VGS = 8V 40 30 VGS = 7V VGS = 6V 20 VGS = 5V 10 VGS = 4V 0 0 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 12 24 36 48 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. OUTPUT CHARACTERISTICS 5-4 60 IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Typical Performance Curves 100 80s PULSE TEST ID(ON), ON-STATE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 50 Unless Otherwise Specified (Continued) VGS = 8V 40 VGS = 7V VGS = 10V 30 VGS = 6V 20 VGS = 5V 10 VGS = 4V 0 0 2.0 1.0 3.0 4.0 5.0 10 175oC 0.1 2 0 FIGURE 6. SATURATION CHARACTERISTICS 10 3.0 80s PULSE DURATION NORMALIZED DRAIN TO SOURCE ON RESISTANCE ON RESISTANCE () rDS(ON), DRAIN TO SOURCE 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 7. TRANSFER CHARACTERISTICS 0.8 0.6 0.4 VGS = 10V 0.2 VGS = 10V, ID = 28A 2.4 1.8 1.2 0.6 VGS = 20V 0 0 25 75 50 100 0.0 -60 -40 -20 125 FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 1.25 0 20 40 60 80 100 120 140 160 180 TJ , JUNCTION TEMPERATURE (oC) ID, DRAIN CURRENT (A) FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 3000 ID = 250A 1.15 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 2400 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 25oC 1 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.0 VDS 50V 80s PULSE TEST DUTY CYCLE = 0.5% MAX 1.05 0.95 0.85 1800 CISS 1200 COSS 600 CRSS 0.75 -60 -40 -20 0 20 40 60 0 80 100 120 140 160 180 1 TJ , JUNCTION TEMPERATURE (oC) 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 5-5 IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Typical Performance Curves 1000 VDS 50V, 80s PULSE TEST ISD, SOURCE TO DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE (S) 20 Unless Otherwise Specified (Continued) 16 25oC 12 175oC 8 4 0 0 10 20 30 175oC 25oC 10 1 50 40 100 0.6 1.2 1.8 2.4 VSD, SOURCE TO DRAIN VOLTAGE (V) 0 ID , DRAIN CURRENT (A) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT VGS, GATE TO SOURCE VOLTAGE (V) 20 FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE ID = 28A VDS = 50V 16 VDS = 20V 12 VDS = 80V 8 4 0 0 12 24 36 48 60 Qg , TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 5-6 3.0 IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Test Circuits and Waveforms VDS BVDSS tP L VARY tP TO OBTAIN IAS + RG REQUIRED PEAK IAS VDS VDD VDD - VGS DUT tP 0V IAS 0 0.01 tAV FIGURE 16. UNCLAMPED ENERGY WAVEFORMS FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT tON tOFF td(ON) td(OFF) tf tr VDS RL 90% 90% + RG - VDD 10% 0 10% 90% DUT VGS VGS 0 12V BATTERY 0.2F FIGURE 18. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) VDD Qg(TOT) SAME TYPE AS DUT 50k Qgd D VDS DUT G Ig(REF) 0 S IG CURRENT SAMPLING RESISTOR VGS Qgs 0.3F 0 50% PULSE WIDTH 10% FIGURE 17. SWITCHING TIME TEST CIRCUIT CURRENT REGULATOR 50% IG(REF) VDS ID CURRENT SAMPLING RESISTOR 0 FIGURE 20. GATE CHARGE WAVEFORMS FIGURE 19. GATE CHARGE TEST CIRCUIT 5-7