2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V(BR)DSS RDS(ON) max ID max TA = 25C 60V 6 @ VGS = 5V 200mA * * * * * * * * N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Gate, 1.2kV HBM Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 1 and 2) Qualified to AEC-Q101 Standards for High Reliability * Description and Applications Mechanical Data * * This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. * * Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Copper leadframe). Terminal Connections: See Diagram Weight: 0.008 grams (approximate) * * * Motor control Power Management Functions * * Drain SOT23 D Gate Top View ESD PROTECTED TO 1.2kV S G Gate Protection Diode Source Top View Pin-Out Equivalent Circuit Ordering Information (Note 3) Part Number 2N7002A-7 2N7002A-13 Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb203 Fire Retardants. 3. For packaging details, go to our website at http://www.diodes.com. CMN1 Chengdu A/T Site Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 2N7002A Document number: DS31360 Rev. 8 - 2 Mar 3 KMN1 YM Marking Information YM NEW PRODUCT Product Summary K = SAT (Shanghai Assembly/ Test site) C = CAT (Chengdu Assembly/ Test site) MN1= Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) Shanghai A/T Site 2010 X Apr 4 2011 Y May 5 Jun 6 1 of 5 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D March 2012 (c) Diodes Incorporated 2N7002A Maximum Ratings @TA = 25C unless otherwise specified Characteristic NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = 10V Steady State Continuous Drain Current (Note 5) VGS = 10V Steady State Symbol VDSS VGSS Value 60 20 Units V V ID 180 130 115 mA ID 220 160 140 mA IS IDM 0.5 800 A mA Value 370 540 348 241 91 -55 to 150 Units TA = 25C TA = 85C TA = 100C TA = 25C TA = 85C TA = 100C Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10s pulse, duty cycle = 1%) Thermal Characteristics @TA = 25C unless otherwise specified Characteristic Symbol (Note 4) (Note 5) (Note 4) (Note 5) (Note 5) Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Temperature Range PD RJA RJC TJ, TSTG mW C/W C Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS (Note 7) Turn-On Delay Time Turn-Off Delay Time Notes: @ TC = 25C @ TC = 125C @ TJ = 25C @ TJ = 125C Symbol Min Typ Max Unit BVDSS 60 70 V VGS = 0V, ID = 10A IDSS A VDS = 60V, VGS = 0V IGSS 1.0 500 10 A VGS = 20V, VDS = 0V VGS(th) 1.2 3.5 3.0 2.0 V 6 5 VDS = VGS, ID = 250A VGS = 5.0V, ID = 0.115A VGS = 10V, ID = 0.115A VDS = 10V, ID = 0.115A RDS (ON) gFS 80 mS Ciss Coss Crss RG 23 3.4 1.4 260 400 pF pF pF tD(ON) tD(OFF) 10 33 ns ns Test Condition VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDD = 30V, ID = 0.115A, RL = 150, VGEN = 10V, RGEN = 25 4. Device mounted on FR-4 PCB, with minimum recommended pad layout 5. Device mounted on 1" x 1" FR-4 PCB with high coverage 2oz. Copper, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2N7002A Document number: DS31360 Rev. 8 - 2 2 of 5 www.diodes.com March 2012 (c) Diodes Incorporated 2N7002A 0.6 1 VDS = 5V Pulsed ID, DRAIN CURRENT (A) 0.5 NEW PRODUCT 0.4 0.3 0.2 0.1 TA = 150C 0.1 T A = 85C TA = 25C T A = -55C 0 0.01 1 2 3 4 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 5 2.5 9 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 8 2.0 7 6 1.5 5 1.0 VGS = 5V 4 3 VGS = 10V 0.5 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 On-Resistance vs. Drain Current & Gate Voltage 100 1.9 1.8 ID = 250A CT, CAPACITANCE (pF) VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.0 1.7 1.6 1.5 1.4 1.3 Ciss 10 Coss 1.2 1.1 1 1.0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 Gate Threshold Variation vs. Ambient Temperature 2N7002A Document number: DS31360 Rev. 8 - 2 3 of 5 www.diodes.com Crss 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance 40 March 2012 (c) Diodes Incorporated 2N7002A IS, SOURCE CURRENT (A) NEW PRODUCT 1 0.1 TA = 150C T A = 125C 0.01 TA = 85C 0.001 TA = 25C TA = -55C 0.0001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage Package Outline Dimensions A B C H K M K1 D J F L G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm Suggested Pad Layout Y Z C X 2N7002A Document number: DS31360 Rev. 8 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 4 of 5 www.diodes.com March 2012 (c) Diodes Incorporated 2N7002A NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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