V
RRM
= 50 V - 600 V
I
F
=60 A
Features
• High Surge Capability DO-5 Package
• Types up to 600 V V
RRM
Parameter Symbol 1N2133A (R) 1N2135A (R) Unit
Re
p
etitive
p
eak reverse volta
g
eV
RRM
300 400 V
1N2133A thru 1N2138AR
1N2138A (R)
500
1N2137A (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Silicon Standard
Recover
y
Diode
Conditions
600
pp g
RMS reverse voltage V
RMS
210 280 V
DC blocking voltage V
DC
50 100 V
Continuous forward current I
F
60 60 A
Operating temperature T
j
-65 to 200 -65 to 200 °C
Storage temperature T
stg
-65 to 200 -65 to 200 °C
Parameter Symbol 1N2133A (R) 1N2135A (R) Unit
Diode forward voltage 1.1 1.1
10 10 μA
15 15 mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
0.65 0.65 °C/W
15
A1050
Reverse current I
R
V
F
1050
V
R
= 50 V, T
j
= 25 °C
I
F
= 60 A, T
j
= 25 °C
T
C
≤ 150 °C
Conditions
350
1050 1050
-65 to 200
60 60
-65 to 200
1N2138A (R)
10 10
1N2137A (R)
0.65
V
R
= 50 V, T
j
= 150 °C
0.65
1.1 1.1
15
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
-65 to 200 -65 to 200
T
C
= 25 °C, t
p
= 8.3 ms
420
200150
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
www.genesicsemi.com 1
1N2133A thru 1N2138AR
www.genesicsemi.com 2
