MJE13005 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data





 

 

  !  

These devices are designed for high–voltage, high–speed power switching

inductive circuits where fall time is critical. They are particularly suited for 115 and

220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor

Controls, Solenoid/Relay drivers and Deflection circuits.

SPECIFICATION FEATURES:

•VCEO(sus) 400 V

•Reverse Bias SOA with Inductive Loads @ TC = 100

•Inductive Switching Matrix 2 to 4 Amp, 25 and 100

...tc @ 3A, 100

C is 180 ns (Typ)

•700 V Blocking Capability

•SOA and Switching Applications Information.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Value

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎÎÎÎÎ

400

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎÎ

VCEV

ÎÎÎÎÎÎÎÎ

700

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Base Voltage

ÎÎÎÎÎÎÎ

VEBO

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak (1)

ÎÎÎÎÎÎÎ

ICM

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

— Peak (1)

ÎÎÎÎÎÎÎ

IBM

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Current — Continuous

— Peak (1)

ÎÎÎÎÎÎÎ

IEM

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TA = 25

Derate above 25

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Watts

mW/

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

600

ÎÎÎÎ

Watts

mW/

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎÎÎ

62.5

ÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎÎÎ

1.67

ÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

275

ÎÎÎÎ

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

Designer’s Data for “W orst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJE13005/D

 Motorola, Inc. 1995



4 AMPERE

NPN SILICON

POWER TRANSISTOR

400 VOLTS

75 WATTS

*Motorola Preferred Device



CASE 221A–06

TO–220AB

REV 3

MJE13005

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

(IC = 10 mA, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

400

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100

ÎÎÎÎ

ICEV

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 9 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with base forward biased

ÎÎÎÎ

IS/b

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

See Figure 11

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Clamped Inductive SOA with Base Reverse Biased

ÎÎÎÎ

RBSOA

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

See Figure 12

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 1 Adc, VCE = 5 Vdc)

(IC = 2 Adc, VCE = 5 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.2 Adc)

(IC = 2 Adc, IB = 0.5 Adc)

(IC = 4 Adc, IB = 1 Adc)

(IC = 2 Adc, IB = 0.5 Adc, TC = 100

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

0.5

0.6

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.2 Adc)

(IC = 2 Adc, IB = 0.5 Adc)

(IC = 2 Adc, IB = 0.5 Adc, TC = 100

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.2

1.6

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product

(IC = 500 mAdc, VCE = 10 Vdc, f = 1 MHz)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Resistive Load (Table 2)

ÎÎÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 125 Vdc, IC = 2 A,

IB1 = IB2 = 0.4 A, tp = 25 µs,

Duty Cycle

1%)

ÎÎÎÎ

—

ÎÎÎÎ

0.025

ÎÎÎÎ

0.1

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 125 Vdc, IC = 2 A,

IB1 = IB2 = 0.4 A, tp = 25 µs,

Duty Cycle

1%)

ÎÎÎÎ

—

ÎÎÎÎ

0.3

ÎÎÎÎ

0.7

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

IB1 = IB2 = 0.4 A, tp = 25 µs,

Duty Cycle

1%)

ÎÎÎÎ

—

ÎÎÎÎ

1.7

ÎÎÎÎ

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

1%)

ÎÎÎÎ

—

ÎÎÎÎ

0.4

ÎÎÎÎ

0.9

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Inductive Load, Clamped (Table 2, Figure 13)

ÎÎÎÎÎÎÎÎ

Voltage Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 2 A, Vclamp = 300 Vdc,

IB1 = 0.4 A, VBE(off) = 5 Vdc, TC = 100

ÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎÎ

0.9

ÎÎÎÎ

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 2 A, Vclamp = 300 Vdc,

IB1 = 0.4 A, VBE(off) = 5 Vdc, TC = 100

ÎÎÎÎ

—

ÎÎÎÎ

0.32

ÎÎÎÎ

0.9

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

IB1 = 0.4 A, VBE(off) = 5 Vdc, TC = 100

ÎÎÎÎ

tfi

ÎÎÎÎ

—

ÎÎÎÎ

0.16

ÎÎÎÎ

—

ÎÎÎ

µs

*Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.

MJE13005

Motorola Bipolar Power Transistor Device Data

C, CAPACITANCE (pF) VCE(sat), COLLECTOR–EMITTER SATURATION

VOLTAGE (VOLTS)

VBE, BASE–EMITTER VOLTAGE (VOLTS)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)

1.1

1.3

0.7

0.3

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.1 0.4 2 4

Figure 2. Collector Saturation Region

0.03 IB, BASE CURRENT (AMP)

0.30.05

1.2

0.4

100

hFE, DC CURRENT GAIN

0.1 0.2 0.5 3

Figure 3. Base–Emitter Voltage Figure 4. Collector–Emitter Saturation Voltage

Figure 5. Collector Cutoff Region

0.8

0.1

VBE, BASE–EMITTER VOLTAGE (VOLTS)

TJ = 25

0.2 1

Figure 6. Capacitance

2 k

VR, REVERSE VOLTAGE (VOLTS)

Cib

Cob

0.3

, COLLECTOR CURRENT ( A)

–0.4 –0.2

300

1.6

0.5

IC = 1 A

TJ = –55

0.04 0.6

0.06 0.1 10.04 0.40.2 0.6

300

200

100

10050510.5

150

IC/IB = 4

+0.6

2 A

0.7 1 2

0.9 0.35

0.55

0.25

0.05

0.45

0.06

VCE = 2 V

VCE = 5 V

TJ = 150

–55

0.15

+0.4+0.2

100

1 k

10 k

500

700

1 k

10 30

REVERSE FORWARD

VCE = 250 V

VBE(sat) @ IC/IB = 4

VBE(on) @ VCE = 2 V

3 A 4 A

0.06 0.1 10.04 0.40.2 0.6 2 4

TJ = –55

150

TJ = 150

125

100

MJE13005

4 Motorola Bipolar Power Transistor Device Data

trv

TIME

VCE 90% IB1

tsv

ICPK Vclamp

90% Vclamp 90% IC

10% Vclamp 10%

ICPK 2% IC

tfi tti

Figure 7. Inductive Switching Measurements

Table 1. Typical Inductive Switching Performance

ÎÎÎÎ

AMP

ÎÎÎ

tsv

ÎÎÎ

trv

ÎÎÎ

tfi

ÎÎÎÎ

tti

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎ

600

900

ÎÎÎ

110

ÎÎÎ

100

240

ÎÎÎÎ

130

ÎÎÎ

180

320

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎ

650

950

ÎÎÎ

100

ÎÎÎ

140

330

ÎÎÎÎ

100

ÎÎÎ

200

350

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎ

550

850

ÎÎÎ

110

ÎÎÎ

160

350

ÎÎÎÎ

100

160

ÎÎÎ

220

390

NOTE: All Data recorded in the inductive Switching Circuit In Table 2.

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times

have been defined and apply to both current and voltage

waveforms since they are in phase. However, for inductive

loads which are common to SWITCHMODE power supplies

and hammer drivers, current and voltage waveforms are not

in phase. Therefore, separate measurements must be made

on each waveform to determine the total switching time. For

this reason, the following new terms have been defined.

tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp

trv = Voltage Rise Time, 10–90% Vclamp

tfi = Current Fall Time, 90–10% IC

tti = Current Tail, 10–2% IC

tc = Crossover Time, 10% Vclamp to 10% IC

An enlarged portion of the inductive switching waveforms is

shown in Figure 7 to aid in the visual identity of these terms.

For the designer, there is minimal switching loss during

storage time and the predominant switching power losses

occur during the crossover interval and can be obtained us-

ing the standard equation from AN–222:

PSWT = 1/2 VCCIC(tc)f

In general, trv + tfi

]

tc. However, at lower test currents this

relationship may not be valid.

As is common with most switching transistors, resistive

switching is specified at 25°C and has become a benchmark

for designers. However, for designers of high frequency con-

verter circuits, the user oriented specifications which make

this a “SWITCHMODE” transistor are the inductive switching

speeds (tc and tsv) which are guaranteed at 100

t, TIME ( s)

Figure 8. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

td @ VBE(off) = 5 V

0.02

0.01

0.5

0.2

IC, COLLECTOR CURRENT (AMP)

0.4 41 20.04

VCC = 125 V

IC/IB = 5

TJ = 25

0.2

0.05

0.1

Figure 9. Turn–Off Time

0.2

0.1

0.5 41 20.04

VCC = 125 V

IC/IB = 5

TJ = 25

0.2

0.3

0.5

0.1

RESISTIVE SWITCHING PERFORMANCE

MJE13005

Motorola Bipolar Power Transistor Device Data

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE

SWITCHING

OUTPUT WAVEFORMS

TEST CIRCUITS

CIRCUIT

VALUES

TEST WAVEFORMS

NOTE

PW and VCC Adjusted for Desired IC

RB Adjusted for Desired IB1

5 V

DUTY CYCLE

≤

10%

tr, tf

≤

10 ns 68 1 k

0.001

0.02

1N4933

270

+5 V

1 k 2N2905

1/2 W 100

–VBE(off)

MJE200

T.U.T.

1N4933

1N4933 33

2N2222

1 k

MJE210

VCC

+5 V

MR826*

Vclamp

*SELECTED FOR

≥

1 kV

VCE

5.1 k

+125 V

SCOPE

–4.0 V

RBTUT

t1 ADJUSTED TO

OBTAIN IC

≈

Lcoil (ICpk)

VCC

≈

Lcoil (ICpk)

Vclamp

+10 V 25

–8 V

Coil Data:

Ferroxcube Core #6656

Full Bobbin (~16 Turns) #16

GAP for 200 µH/20 A

Lcoil = 200 µHVCC = 20 V

Vclamp = 300 Vdc

VCC = 125 V

RC = 62

Ω

D1 = 1N5820 or Equiv.

RB = 22

Ω

Test Equipment

Scope–Tektronics

475 or Equivalent

tr, tf < 10 ns

Duty Cycle = 1.0%

RB and RC adjusted

for desired IB and IC

VCE

TIME

IC(pk)

VCE or

Vclamp

t2t

tf CLAMPED

tf UNCLAMPED

≈

Table 2. Test Conditions for Dynamic Performance

t, TIME (ms)

0.01

0.7

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE

0.05 1 2 5 10 20 50 100 200 500

JC(t) = r(t) R

JC = 1.67

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) Z

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.01

SINGLE PULSE

0.1 0.50.2

(NORMALIZED)

1 k

0.5

0.3

0.07

0.03

0.02

Figure 10. Typical Thermal Response [ZθJC(t)]

0.1

0.02

MJE13005

6 Motorola Bipolar Power Transistor Device Data

The Safe Operating Area Figures 1 1 and 12 are specified ratings

for these devices under the test conditions shown.

IC(pk), COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

5 ms 500

1 ms

7VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.02

10 400

0.5

0.1

0.05

30 50 70 100

Figure 11. Forward Bias Safe Operating Area

Figure 12. Reverse Bias Switching

Safe Operating Area

0.2

0.01 300 500

MJE13005

5 20

0800

100 300

≤

100

IB1 = 2.0 A

500 700

VBE(off) = 9 V

VCE, COLLECTOR–EMITTER CLAMP VOLTAGE (VOLTS)

200 400 600

5 V

MJE13005 3 V

200

1.5 V

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 11 is based on TC = 25

C; TJ(pk) is

variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated

when TC ≥ 25

C. Second breakdown limitations do not der-

ate the same as thermal limitations. Allowable current at the

voltages shown on Figure 11 may be found at any case tem-

perature by using the appropriate curve on Figure 13.

TJ(pk) may be calculated from the data in Figure 10. At

high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases, with

the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping,

RC snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage–current conditions during re-

verse biased turn–off. This rating is verified under clamped

conditions so that the device is never subjected to an ava-

lanche mode. Figure 12 gives the complete RBSOA charac-

teristics.

Figure 13. Forward Bias Power Derating

TC, CASE TEMPERATURE (

040 120 160

0.6

POWER DERATING FACTOR

SECOND BREAKDOWN

DERATING

0.8

0.4

0.2

60 100 14080

THERMAL

DERATING

MJE13005

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

1 2 3

SEATING

PLANE

–T–

MJE13005

8 Motorola Bipolar Power Transistor Device Data

How to reach us:

USA/EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer .

MJE13005/D

*MJE13005/D*

◊