
MJE13005
NPN Silicon
Plastic-Encapsulate
Transistor
Features
• Capable of 1.5Watts of Power Dissipation.
• Collector-current 4.0A
• Collector-base Voltage 700V
• Operating and storage junction temperature range: -55OC to +150OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(I
C=10mAdc, IB=0)
400 Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(I
C=1000uAdc, IE=0)
700 Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(I
E=1000uAdc, IC=0)
9.0 Vdc
I
CBO Collector Cutoff Current
(VCB=700Vdc, IE=0)
1000 uAdc
I
CEO Collector Cutoff Current
(VCE=400Vdc,IB=0)
100 uAdc
IEBO Emitter Cutoff Current
(VEB=9.0Vdc, IC=0)
1000 uAdc
ON CHARACTERISTICS
hFE DC Current Gain
(I
C=1000mAdc, VCE=5.0Vdc 10 40
VCE(sat) Collector-Emitter Saturation Voltage
(I
C=2000mAdc, IB=500mAdc) 0.6 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(I
C=2000mAdc, IB=500mAdc) 1.6 Vdc
SMALL-SIGNAL CHARACTERISTICS
fTTrans istor Frequency
(I
C=500mAdc, VCE=10Vdc, f=1.0MHz) 5.0 MHz
tFFall Time 0.9 uS
tSStorage Time
VCC=120V,IC
=2.0A
IB1=I
B2=0.4A 4.0 uS
INCHES MM
A .560 .625 14.22 15.88
B .380 .420 9.65 10.67
C .100 .135 2.54 3.43
D .230 .270 5.84 6.86
E .380 .420 9.65 10.67
F ------ .250 ------ 6.35
G .500 .580 12.70 14.73
H .090 .110 2.29 2.79
I .020 .045 0.51 1.14
J .012 .025 0.30 0.64
K .139 .161 3.53 4.09
L .140 .190 3.56 4.83
M .045 .055 1.14 1.40
N .080 .115 2.03 2.92
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
TO-220
PIN
PIN 1. BASE
PIN 2. COLLECTOR
12 3
PIN 3. EMITTER
Revision: 3 2007/09/19
omponents
20736 Marilla Street Chatsworth
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MCC TM
Micro Commercial Components
www.mccsemi.com
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x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
xMarking:3DD13005