©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
April 2006
H11AAX-M Rev. 1.0.0
H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers
H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M
AC Input/Phototransistor Optocouplers
Features
■
Bi-polar emitter input
■
Built-in reverse polarity input protection
■
Underwriters Laboratory (UL) recognized File
#E90700, Volume 2
■
VDE approved File #102497 (ordering option ‘V’)
Applications
■
AC line monitor
■
Unknown polarity DC sensor
■
Telephone line interface
Description
The H11AAX-M series consists of two gallium-arsenide
infrared emitting diodes connected in inverse parallel
driving a single silicon phototransistor output.
Package and Schematic
1
2
6
5COLL
4 EMITTER
BASE
3
2
www.fairchildsemi.com
H11AAX-M Rev. 1.0.0
H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers
Absolute Maximum Ratings
(T
A
=25°C Unless otherwise specified)
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
*Typical values at T
A
= 25°C
Symbol Parameter Device Value Units
TOTAL DEVICE
T
STG
Storage Temperature All -40 to +150 °C
T
OPR
Operating Temperature All -40 to +100 °C
T
SOL
Lead Solder Temperature All 260 for 10 sec °C
P
D
Total Device Power Dissipation
Derate Linearly From 25°C All 250 mW
2.94 mW/°C
EMITTER
I
F
Continuous Forward Current All 60 mA
I
F
(pk) Forward Current – Peak (1µs pulse, 300 pps) All ±1.0 A
P
D
LED Power Dissipation
Derate Linearly From 25°C All 120 mW
1.41 mW/°C
DETECTOR
I
C
Continuous Collector Current All 50 mA
P
D
Detector Power Dissipation
Derate linearity from 25°C All 150 mW
1.76 mW/°C
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= ±10mA All 1.17 1.5 V
C
J
Capacitance V
F
= 0 V, f = 1.0MHz All 80 pF
DETECTOR
BV
CEO
Breakdown Voltage
Collector to Emitter I
C
= 1.0mA, I
F
= 0 All 30 100 V
BV
CBO
Collector to Base I
C
= 100µA, I
F
= 0 All 70 120 V
BV
EBO
Emitter to Base I
E
= 100µA, I
F
= 0 All 5 10 V
BV
ECO
Emitter to Collector I
E
= 100µA, I
F
= 0 All 7 10 V
I
CEO
Leakage Current
Collector to Emitter V
CE
= 10 V, I
F
= 0 H11AA1,3,4(-M) 1 50 nA
H11AA2-M 1 200
C
CE
Capacitance Collector
to Emitter V
CE
= 0, f = 1MHz All 10 pF
C
CB
Collector to Base V
CB
= 0, f = 1MHz All 80 pF
C
EB
Emitter to Base V
EB
= 0, f = 1MHz All 15 pF
3
www.fairchildsemi.com
H11AAX-M Rev. 1.0.0
H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers
Transfer Characteristics
(T
A
= 25°C Unless otherwise specified.)
Isolation Characteristics
*Typical values at T
A
= 25°C
Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units
CTR
CE
Current Transf er Ratio ,
Collector to Emitter I
F
= ±10mA, V
CE
= 10V H11AA4-M 100 %
H11AA3-M 50
H11AA1-M 20
H11AA2-M 10
Current Transf er Ratio ,
Symmetry I
F
= ±10mA, V
CE
= 10V
(Figure 11) All .33 3.0
V
CE(SAT)
Saturation Voltage,
Collector to Emitter I
F
= ±10mA, I
CE
= 0.5mA All .40 V
Symbol Characteristic Test Conditions Min. Typ.* Max. Units
C
I-O
Package Capacitance
Input/Output V
I-O
= 0, f = 1MHz 0.7 pF
V
ISO
Isolation Voltage f = 60 Hz, t = 1 sec. 7500 Vac(pk)
R
ISO
Isolation Resistance V
I-O
= 500 VDC 10
11
Ω
4
www.fairchildsemi.com
H11AAX-M Rev. 1.0.0
H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers
Typical Performance Characteristics
Fig. 2 Normalized CTR vs. Forward Current
IF - FORWARD CURRENT (mA)
NORMALIZED CTR
Fig. 3 Normalized CTR vs. Ambient Temperature
NORMALIZED CTR
TA - AMBIENT TEMPERATURE (°C)
Fig. 5 CTR vs. RBE (Saturated)
RBE- BASE RESISTANCE (k Ω)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
Fig. 4 CTR vs. RBE (Unsaturated)
RBE - BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
IC - COLLECTOR CURRENT (mA)
VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V)
Fig. 1 Inp ut Volta ge vs. Inpu t Current
VF - INPUT VOLTAGE (V)
I
F
- I NP UT C URRENT (mA)
0.01 0.1 1 10
0.001
0.01
0.1
1
10
100
TA = 25°C
IF = 2.5mA
IF = 20mA
IF = 10mA
IF = 5mA
-2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0
-100
-80
-60
-40
-20
0
20
40
60
80
100 TA = 25°C
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0 VCE = 5V
TA = 25°C
IF = 10mA
IF = 5mA
IF = 20mA
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0 VCE = 0.3V
TA = 25°C
IF = 10mA
IF = 5mA
IF = 20mA
-60 -40 -20 0 20 40 60 80 100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IF = 10mA
VCE = 5V
Normalized to IF = 10mA, TA = 25°C
IF = 5mA
IF = 20mA
05101520
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4TA = 25°C
VCE = 5V Normalized to IF = 10mA
5
www.fairchildsemi.com
H11AAX-M Rev. 1.0.0
H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers
Typical Performance Characteristics
(Continued)
NORMALIZED t
on
- (t
on(R
BE
)
/ t
on(open)
)
Fig. 8 Normalized ton vs. RBE
RBE- BASE RESISTANCE (k Ω)
Fig. 7 Switching Speed vs. Load Resistor
R-LOAD RESISTOR (kΩ)
SWITCHING SPEED - (µs)
NORMALIZED t
off
- (t
off(R
BE
)
/ t
off(open)
)
Fig. 9 Normalized toff vs. RBE
RBE- BASE RESISTANCE (kΩ)
Fig. 10 Dark Current vs. Ambient Temperature
TA - AMBIENT TEMPERATURE
(°C)
ICEO - COLLECTOR -EMITTER DARK CURRENT (nA)
VCE - COLLECTOR TO EMITTER VOLTAGE (V)
.01 .05 .1 .5 51 10
NORMALIZED OUTPUT CURRENT
.01
.005
.05
.1
.5
1
5
10 Fig. 11 Output Symmetry Characteristics
IF =
I
- 10mA
I
IF =
I
10mA
I
NORMALIZED TO:
VCE = 10 V
IF = 10 mA
THE MAXIMUM PEAK
OUTPUT CURRENT
WILL BE NO MORE
THAN THREE TIMES
THE MINIMUM PEAK
OUTPUT CURRENT AT
IF = ±10 mA
10 100 1000 10000 100000
0
1
2
3
4
5
6
7
VCC = 10V
IC = 2mA
RL = 100Ω
TA = 25°C
10 100 1000 10000 100000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VCC = 10V
IC = 2mA
RL = 100Ω
TA = 25°C
0.1 1 10 100
0.1
1
10
100
1000 IF = 10mA
VCC = 10V
TA = 25°C
Toff
Ton
Tr
Tf
020406080100
0.1
1
10
100
1000
10000
VCE = 10V
VCE = 30V
6
www.fairchildsemi.com
H11AAX-M Rev. 1.0.0
H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers
Mechanical Dimensions
Package Dimensions (Through Hole) Package Dimensions (Surface Mount)
Package Dimensions (0.4" Lead Spacing) Recommended Pad Layout for
Surface MountLeadform
Note:
All dimensions are in inches (millimeters).
0.350 (8.89)
0.320 (8.13)
0.260 (6.60)
0.240 (6.10)
0.320 (8.13)
0.070 (1.77)
0.040 (1.02) 0.014 (0.36)
0.010 (0.25)
0.200 (5.08)
0.115 (2.93)
0.100 (2.54)
0.015 (0.38)
0.020 (0.50)
0.016 (0.41) 0.100 (2.54) 15°
0.012 (0.30)
0.350 (8.89)
0.320 (8.13)
0.260 (6.60)
0.240 (6.10)
0.390 (9.90)
0.332 (8.43)
0.070 (1.77)
0.040 (1.02) 0.014 (0.36)
0.010 (0.25)
0.320 (8.13)
0.035 (0.88)
0.006 (0.16)
0.012 (0.30)
0.008 (0.20)
0.200 (5.08)
0.115 (2.93)
0.025 (0.63)
0.020 (0.51)
0.020 (0.50)
0.016 (0.41)
0.100 [2.54]
0.350 (8.89)
0.320 (8.13)
0.260 (6.60)
0.240 (6.10)
0.070 (1.77)
0.040 (1.02) 0.014 (0.36)
0.010 (0.25)
0.200 (5.08)
0.115 (2.93)
0.020 (0.50)
0.016 (0.41)
0.100 [2.54]
0.100 (2.54)
0.015 (0.38)
0.012 (0.30)
0.008 (0.21)
0.425 (10.80)
0.400 (10.16)
0.070
(
1.78
)
0.060
(
1.52
)
0.030
(
0.76
)
0.100
(
2.54
)
0.305
(
7.75
)
0.425
(
10.79
)
7
www.fairchildsemi.com
H11AAX-M Rev. 1.0.0
H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers
Ordering Information
Marking Information
Option/Order Entry Identifier Description
S Surface Mount Lead Bend
SR2 Surface Mount; Tape and Reel
T 0.4" Lead Spacing
V VDE 0884
TV VDE 0884, 0.4" Lead Spacing
SV VDE 0884, Surface Mount
SR2V VDE 0884, Surface Mount, Tape & Reel
H11AA1
V X YY Q
1
2
6
43 5
*Note – P arts that do not hav e the ‘V’ option (see definition 3 abov e) that
are marked with date code ‘325’ or earlier are marked in portrait format.
Definitions
1Fairchild logo
2Device number
3VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4 One digit year code, e.g., ‘3’
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
8
www.fairchildsemi.com
H11AAX-M Rev. 1.0.0
H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers
Carrier T ape Specifications
Reflow Profile (White Package, -M Suffix)
4.0 ± 0.1
Ø1.5 MIN
User Direction of Feed
2.0 ± 0.05
1.75 ± 0.10
11.5 ± 1.0
24.0 ± 0.3
12.0 ± 0.1
0.30 ± 0.05
21.0 ± 0.1
4.5 ± 0.20
0.1 MAX 10.1 ± 0.20
9.1 ± 0.20
Ø1.5 ± 0.1/-0
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
°C
Time (s)
0 60 180120 270
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
360
1.822°C/Sec Ramp up rate
33 Sec
Rev. I20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECI FICATIONS DO NOT EXPAND THE TERM S OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life sup port devices or systems a re devices or syst ems which,
(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) wh ose failure to pe rform when pr operly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definiti on of Terms
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FAST®
FASTr™
FPS™
FRFET™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Serie s™
RapidConfigure™
RapidConnect™
μSerDes™
ScalarPump™
SILENT SW I TCHER®
SMART ST ART ™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UniFET™
UltraFET®
VCX™
Wire™
Across the board. Around the world.™
The Power Franchise ®
Programmable Active Droop™
Datashee t Identification Product Sta tus Defi nition
Advance Information Formative or In Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
