Semiconductor Components Industries, LLC, 2000
October, 2000 – Rev. 3 1Publication Order Number:
MBRS130LT3/D
MBRS130LT3
Preferred Device
Schottky Power Rectifier
Surface Mount Power Package
...Employs the Schottky Barrier principle in a large area
metal–to–silicon power diode. State–of–the–art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification,
or as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the
system.
Very Low Forward Voltage Drop (0.395 Volts Max @
1.0 A, TJ = 25°C)
Small Compact Surface Mountable Package with J–Bend Leads
Highly Stable Oxide Passivated Junction
Guardring for Stress Protection
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 95 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in 12 mm Tape and Reel, 2500 units per reel
Cathode Polarity Band
Marking: 1BL3
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30 V
Average Rectified Forward Current
TL = 120°C
TL = 110°C
IF(AV) 1.0
2.0
A
Non–Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
IFSM 40 A
Operating Junction Temperature TJ–65 to +125 °C
Device Package Shipping
ORDERING INFORMATION
SMB
CASE 403A
PLASTIC
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MBRS130LT3 SMB 2500/Tape & Reel
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
30 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
1BL3
1BL3 = Device Code
MBRS130LT3
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2
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance — Junction to Lead
(TL = 25°C) RθJL 12 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1.)
(iF = 1.0 A, TJ = 25°C)
(iF = 2.0 A, TJ = 25°C)
VF0.395
0.445
Volts
Maximum Instantaneous Reverse Current (Note 1.)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
IR1.0
10
mA
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%.
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
10
5.0
2.0
1.0
0.5
0.2
0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
TJ = 100°C
25°C
IR, REVERSE LEAKAGE CURRENT (mA)
100
10
1.0
0.1
0.01
0.001 0 3 6 9 12 15 18 21 24 27 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Leakage Current
TJ = 100°C
25°C
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
8
7
6
5
4
3
2
1
050 60 70 80 90 100 110 120 130
TC, CASE TEMPERATURE (°C)
Figure 3. Current Derating (Case)
SQUARE
WAVE
DC
TJ = 100°C
PF(AV), AVERAGE POWER DISSIPATION (WATTS)
8
7
6
5
4
3
2
1
001 2 34 5 67 8
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Typical Power Dissipation
20
10 5
DC
IPK
IAV
=
SQUARE
WAVE
RATED VOLTAGE APPLIED
RθJC = 12°C/W
TJ = 100°C
MBRS130LT3
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3
C, CAPACITANCE (pF)
400
350
300
250
200
150
100
50
00 4 8 12162024 2832
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
NOTE: TYPICAL CAPACITANCE
AT 0 V = 290 pF
PACKAGE DIMENSIONS
SMB
PLASTIC PACKAGE
CASE 403A–03
ISSUE D
A
S
DB
J
P
K
C
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.160 0.180 4.06 4.57
B0.130 0.150 3.30 3.81
C0.075 0.095 1.90 2.41
D0.077 0.083 1.96 2.11
H0.0020 0.0060 0.051 0.152
J0.006 0.012 0.15 0.30
K0.030 0.050 0.76 1.27
P0.020 REF 0.51 REF
S0.205 0.220 5.21 5.59
MBRS130LT3
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4
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MBRS130LT3/D
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