NTE2389
MOSFET
N−Ch, Enhancement Mode
High Speed Switch
TO220 Type Package
Absolute Maximum Ratings: (TA = +25mC unless otherwise specified)
Drain−Source Voltage, VDS 60V..........................................................
Drain−Gate Voltage (RGS = 20kW), VDGR 60V..............................................
Drain Current, ID
Continuous 35A..................................................................
Pulsed 152A.....................................................................
Gate−Source Voltage, VGS W30V.........................................................
Maximum Power Dissipation, PD125W...................................................
Operating Junction Temperature, TJ+175mC...............................................
Storage Temperature Range, Tstg −55m to +175mC..........................................
Maximum Thermal Resistance, Junction−to−Case, RthJC 1.2mC/W............................
Typical Thermal Resistance, Junction−to−Ambient, RthJA 60mC/W............................
Electrical Characteristics: (TA = +25mC unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Static Ratings
Drain−Source Breakdown Voltage BVDSS ID = 0.25mA, VGS = 0 60 − − V
Gate Threshold Voltage VGS(th) ID = 1mA, VDS = VGS 2.1 3.0 4.0 V
Zero Gate Voltage Drain Current IDSS VDS = 60V,
VGS = 0
TJ = +25mC−1 10 mA
TJ = +125mC−0.1 1.0 mA
Gate−Source Leakage Current IGSS VGS = W30V, VDS = 0 −10 100 nA
Drain−Source On−State Resistance RDS(on) ID = 20A, VGS = 10V −40 45 mW
Dynamic Ratings
Forward Transconductance gfs ID = 20A, VDS = 25V 8 13.5 −mhos
Input Capacitance Ciss VDS = 25V, VGS = 0, f = 1MHz −1650 2000 pF
Output Capacitance Coss −560 750 pF
Reverse Transfer Capacitance Crss −300 400 pF
Rev. 10−13
Electrical Characteristics (Cont’d): (TA = +25mC unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Dynamic Ratings (Cont’d)
Turn−On Time td (on) VCC = 30V, VGS = 10V,
ID = 3A, RGS = 50W
−25 40 ns
tr−60 90 ns
Turn−Off Time td (off) −125 160 ns
tf−100 130 ns
Internal Drain Inductance LdMeasured from contact screw
on tab to center of die
−3.5 −nH
Measured from drain lead 6mm
from package to center of die
−4.5 −nH
Internal Source Inductance LsMeasured from source lead
6mm from package to source
bond pad
−7.5 −nH
Reverse Diode
Continuous Reverse Drain Current IDR − − 41 A
Pulsed Reverse Drain Current IDRM − − 164 A
Diode Forward On−Voltage VSD IF = 41A, VGS = 0 −1.4 2.0 V
Reverse Recovery Time trr IF = 41A, VGS = 0, VR = 30V
−diF/dt = 100A/ms
−60 −ns
Reverse Recovery Charge Qrr −0.3 −mC
.420 (10.67)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.250 (6.35)
Max
.147 (3.75)
Dia Max
.070 (1.78) Max
.100 (2.54)
Gate
Drain/Tab
Source
.110 (2.79)
G
S
D
