NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
CM75MXA-24S
102/14 Rev. 4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Description:
CIBs are low profile and thermally
efficient. Each module consists of
a three-phase diode converter sec-
tion, a three-phase inverter section
and a brake circuit. A thermistor is
included in the package for sens-
ing the baseplate temperature. 6th
Generation CSTBT chips yield low
loss.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM75MXA-24S is a 1200V (VCES),
75 Ampere CIB Power Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 75 24
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.79 121.7
B 2.44 62.0
C 0.51 13.0
D 4.49 114.05
E 4.33±0.02 110.0±0.5
F 3.89 99.0
G 3.72 94.5
H 0.16 4.06
J 0.51 13.09
K 0.15 3.81
L 0.45 11.43
M 0.9 22.86
N 0.22 Dia. 5.5 Dia.
P 2.13 54.2
Q 1.53 39.0
R 1.97±0.02 50.0±0.5
S 2.26 57.5
T 0.30 7.75
U 0.102 Dia. 2.6 Dia.
Dimensions Inches Millimeters
V 0.088 Dia. 2.25 Dia.
W 0.46 11.66
X 0.16 4.2
Y 0.59 15.0
Z 0.27 7.0
AA 0.81 20.5
AB 0.67 17.0
AC 0.12 3.0
AD 0.14 3.5
AE 0.03 0.8
AF 0.15 3.75
AG 0.05 1.15
AH 0.025 0.65
AJ 0.29 7.4
AK 0.05 1.2
AL 0.49 12.5
AM 0.12 3.0
AN 0.17 Dia. 4.3 Dia.
P1(48-49)
T
(9-10)
P(54-56)
N(59-61)
S
(5-6)
R
(1-2)
GWN(31)
Es(32)
GWP(23)
GVN(33)
GVP(18)
GUN(40)
Es1(39)
GUP(13)
U(14-15)
B(52-53)
V(19-20) W(24-25)
GB(41)
N1(44-45)
TH2
(29)
TH1
(28)
NTC
Caution: Each (two or three) pin terminal of P/N/P1/N1/U/V/W/B/R/S/T is connected in the module,
however, all three pins should be used for external wiring.
DETAIL "B"
A
AA
J
P
D
E
F
KK M
K
KK
G
K
K
L L L
H
AG
K
AH AK
AJ
Z
C
AB
R B
AL
Y
KK
L
N (4 PLACES) AC
K
KK
KKKK
T
AD
X
L
K
K
K
K
L L L L
AE
AF
V
AM
U
AN
KQ S
DETAIL "B"
DETAIL "A"
DETAIL "A"
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
53
54
55
56
57
58
59
60
61
30
29
28
27
26
25
24
23
52 51
WW
50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
Tolerance Otherwise Specified (mm)
The tolerance of size between
terminals is assumed to ±0.4
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1. 2
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
02/14 Rev. 4
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Inverter Part IGBT/Diode
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts
Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts
Collector Current (DC, TC = 122°C)*2,*4 IC 75 Amperes
Collector Current (Pulse, Repetitive)*3 ICRM 150 Amperes
Total Power Dissipation (TC = 25°C)*2,*4 Ptot 600 Watts
Emitter Current*2 IE*1 75 Amperes
Emitter Current (Pulse, Repetitive)*3 IERM*1 150 Amperes
Maximum Junction Temperature, Instantaneous Event (Overload) Tj(max) 175 °C
Brake Part IGBT/Diode
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts
Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts
Collector Current (DC, TC = 125°C)*2,*4 IC 50 Amperes
Collector Current (Pulse, Repetitive)*3 ICRM 100 Amperes
Total Power Dissipation (TC = 25°C)*2,*4 Ptot 425 Watts
Repetitive Peak Reverse Voltage (VGE = 0V) VRRM 1200 Volts
Forward Current*2 IF 50 Amperes
Forward Current (Pulse, Repetitive)*3 IFRM 100 Amperes
Maximum Junction Temperature, Instantaneous Event (Overload) Tj(max) 175 °C
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
53
54
55
56
57
58
59
60
61
30
29
28
27
26
25
24
23
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
0 0
1 7. 2
19.4
18.1
31.2
32.6
47.0
48.0
15.2
LABEL SIDE
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: Clamp Di CR*P / CR*N (* = R/S/T): Conv Di
Th: NTC Thermistor
0
24.5
18.2
0
33.9
26.0
71.3
83.5
93.3
102.9
46.8
36.4
64.5
72.9
82.4
90.8
99.3
108.8
25.6
24.6
35.9
42.5
46.2
110.9
Tr
Br Di
Br
Di
UN Di
VN
Di
WN
Tr
UN Tr
VN
Tr
WN
Tr
WP
Th
CR
RN CR
SN CR
TN
CR
RP CR
SP CR
TP
Di
WP
Di
VP
Tr
VP
Di
UP
Tr
UP
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
02/14 Rev. 4
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Converter Part Diode
Characteristics Symbol Rating Units
Repetitive Peak Reverse Voltage (VGE = 0V) VRRM 1600 Volts
Recommended AC Input Voltage (RMS) Ea 440 Volts
DC Output Current (3-Phase Full Wave Rectifying, TC = 125°C)*4 IO 75 Amperes
Surge Forward Current (Sine Half Wave 1 Cycle Peak Value, f = 60Hz, Non-repetative) IFSM 750 Amperes
Current Square Time (Value for One Cycle of Surge Current) I2t 2340 A2s
Maximum Junction Temperature, Instantaneous Event (Overload) Tj(max) 150 °C
Module
Characteristics Symbol Rating Units
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) VISO 2500 Volts
Maximum Case Temperature*4 TC(max) 125 °C
Operating Junction Temperature, Continuous Operation (Under Switching) Tj(op) -40 ~ +150 °C
Storage Temperature Tstg -40 ~ +125 °C
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
53
54
55
56
57
58
59
60
61
30
29
28
27
26
25
24
23
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
0 0
1 7. 2
19.4
18.1
31.2
32.6
47.0
48.0
15.2
LABEL SIDE
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: Clamp Di CR*P / CR*N (* = R/S/T): Conv Di
Th: NTC Thermistor
0
24.5
18.2
0
33.9
26.0
71.3
83.5
93.3
102.9
46.8
36.4
64.5
72.9
82.4
90.8
99.3
108.8
25.6
24.6
35.9
42.5
46.2
110.9
Tr
Br Di
Br
Di
UN Di
VN
Di
WN
Tr
UN Tr
VN
Tr
WN
Tr
WP
Th
CR
RN CR
SN CR
TN
CR
RP CR
SP CR
TP
Di
WP
Di
VP
Tr
VP
Di
UP
Tr
UP
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
02/14 Rev. 4
Electrical Characteristics, Tj = 25°C unless otherwise specied
Inverter Part IGBT/Diode
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 7.5mA, VCE = 10V 5.4 6.0 6.6 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 75A, VGE = 15V, Tj = 25°C*6 — 1.80 2.25 Volts
(Terminal) IC = 75A, VGE = 15V, Tj = 125°C*6 — 2.00 — Volts
IC = 75A, VGE = 15V, Tj = 150°C*6 — 2.05 — Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 75A, VGE = 15V, Tj = 25°C*6 — 1.70 2.15 Volts
(Chip) IC = 75A, VGE = 15V, Tj = 125°C*6 — 1.90 — Volts
IC = 75A, VGE = 15V, Tj = 150°C*6 — 1.95 — Volts
Input Capacitance Cies — — 7.5 nF
Output Capacitance Coes VCE = 10V, VGE = 0V — — 1.5 nF
Reverse Transfer Capacitance Cres — — 0.13 nF
Gate Charge QG VCC = 600V, IC = 75A, VGE = 15V — 175 — nC
Turn-on Delay Time td(on) — — 300 ns
Rise Time tr VCC = 600V, IC = 75A, VGE = ±15V, — — 200 ns
Turn-off Delay Time td(off) RG = 8.2Ω, Inductive Load — — 600 ns
Fall Time tf — — 300 ns
Emitter-Collector Voltage VEC*1 IE = 75A, VGE = 0V, Tj = 25°C*6 — 1.80 2.25 Volts
(Terminal) IE = 75A, VGE = 0V, Tj = 125°C*6 — 1.80 — Volts
IE = 75A, VGE = 0V, Tj = 150°C*6 — 1.80 — Volts
Emitter-Collector Voltage VEC*1 IE = 75A, VGE = 0V, Tj = 25°C*6 — 1.70 2.15 Volts
(Chip) IE = 75A, VGE = 0V, Tj = 125°C*6 — 1.70 — Volts
IE = 75A, VGE = 0V, Tj = 150°C*6 — 1.70 — Volts
Reverse Recovery Time trr*1 VCC = 600V, IE = 75A, VGE = ±15V — — 300 ns
Reverse Recovery Charge Qrr*1 RG = 8.2Ω, Inductive Load — 4.0 — µC
Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 75A, — 7.3 — mJ
Turn-off Switching Energy per Pulse Eoff VGE = ±15V, RG = 8.2Ω, — 8.0 — mJ
Reverse Recovery Energy per Pulse Err*1 Tj = 150°C, Inductive Load — 6.9 — mJ
Internal Lead Resistance RCC' + EE' Main Terminals-Chip, — — 4.0 mΩ
Per Switch,TC = 25°C*4
Internal Gate Resistance rg Per Switch — 0 — Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
53
54
55
56
57
58
59
60
61
30
29
28
27
26
25
24
23
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
0 0
1 7. 2
19.4
18.1
31.2
32.6
47.0
48.0
15.2
LABEL SIDE
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: Clamp Di CR*P / CR*N (* = R/S/T): Conv Di
Th: NTC Thermistor
0
24.5
18.2
0
33.9
26.0
71.3
83.5
93.3
102.9
46.8
36.4
64.5
72.9
82.4
90.8
99.3
108.8
25.6
24.6
35.9
42.5
46.2
110.9
Tr
Br Di
Br
Di
UN Di
VN
Di
WN
Tr
UN Tr
VN
Tr
WN
Tr
WP
Th
CR
RN CR
SN CR
TN
CR
RP CR
SP CR
TP
Di
WP
Di
VP
Tr
VP
Di
UP
Tr
UP
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
02/14 Rev. 4
Electrical Characteristics, Tj = 25°C unless otherwise specied
Brake Part IGBT/Diode
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 10V 5.4 6.0 6.6 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V, Tj = 25°C*6 — 1.80 2.25 Volts
(Terminal) IC = 50A, VGE = 15V, Tj = 125°C*6 — 2.00 — Volts
IC = 50A, VGE = 15V, Tj = 150°C*6 — 2.05 — Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V, Tj = 25°C*6 — 1.70 2.15 Volts
(Chip) IC = 50A, VGE = 15V, Tj = 125°C*6 — 1.90 — Volts
IC = 50A, VGE = 15V, Tj = 150°C*6 — 1.95 — Volts
Input Capacitance Cies — — 5.0 nF
Output Capacitance Coes VCE = 10V, VGE = 0V — — 1.0 nF
Reverse Transfer Capacitance Cres — — 0.08 nF
Gate Charge QG VCC = 600V, IC = 50A, VGE = 15V — 117 — nC
Turn-on Delay Time td(on) — — 300 ns
Rise Time tr VCC = 600V, IC = 50A, VGE = ±15V, — — 200 ns
Turn-off Delay Time td(off) RG = 13Ω, Inductive Load — — 600 ns
Fall Time tf — — 300 ns
Reverse Current IRRM VR = VRRM, VGE = 0V — — 1.0 mA
Forward Voltage VF IF = 50A, VGE = 0V, Tj = 25°C*6 — 1.80 2.25 Volts
(Terminal) IF = 50A, VGE = 0V, Tj = 125°C*6 — 1.80 — Volts
IF = 50A, VGE = 0V, Tj = 150°C*6 — 1.80 — Volts
Forward Voltage VF IF = 50A, VGE = 0V, Tj = 25°C*6 — 1.70 2.15 Volts
(Chip) IF = 50A, VGE = 0V, Tj = 125°C*6 — 1.70 — Volts
IF = 50A, VGE = 0V, Tj = 150°C*6 — 1.70 — Volts
Reverse Recovery Time trr VCC = 600V, IF = 50A, VGE = ±15V — — 300 ns
Reverse Recovery Charge Qrr RG = 13Ω, Inductive Load — 2.7 — µC
Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IF = 50A, — 5.5 — mJ
Turn-off Switching Energy per Pulse Eoff VGE = ±15V, RG = 13Ω, — 5.3 — mJ
Reverse Recovery Energy per Pulse Err Tj = 150°C, Inductive Load — 4.5 — mJ
Internal Gate Resistance rg — 0 — Ω
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
6
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
02/14 Rev. 4
Electrical Characteristics, Tj = 25°C unless otherwise specied (continued)
Converter Part Diode
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Repetitive Peak Reverse Current IRRM VR = VRRM, Tj = 150°C — — 20 mA
Forward Voltage VF IF = 75A*6 — 1.2 1.6 Volts
(Terminal)
NTC Thermistor Part
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Zero Power Resistance R25 TC = 25°C*4 4.85 5.00 5.15 kΩ
Deviation of Resistance ∆R/R TC = 100°C*4, R100 = 493Ω -7.3 — +7.8 %
B Constant B(25/50) Approximate by Equation*7 — 3375 — K
Power Dissipation P25 TC = 25°C*4 — — 10 mW
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case*4 Rth(j-c)Q Per Inverter IGBT — — 0.25 K/W
Thermal Resistance, Junction to Case*4 Rth(j-c)D Per Inverter Diode — — 0.40 K/W
Thermal Resistance, Junction to Case*4 Rth(j-c)Q Per Brake IGBT — — 0.35 K/W
Thermal Resistance, Junction to Case*4 Rth(j-c)D Per Brake Diode — — 0.63 K/W
Thermal Resistance, Junction to Case*4 Rth(j-c)D Per Converter Diode — — 0.24 K/W
Contact Thermal Resistance, Rth(c-f) Thermal Grease Applied, — 15 — K/kW
Case to Heatsink*4 Per 1 Module*8
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*7 B(25/50) = In( R25)/( 1 – 1 )
R50 T25 T50
R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*8 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
53
54
55
56
57
58
59
60
61
30
29
28
27
26
25
24
23
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
0 0
1 7. 2
19.4
18.1
31.2
32.6
47.0
48.0
15.2
LABEL SIDE
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: Clamp Di CR*P / CR*N (* = R/S/T): Conv Di
Th: NTC Thermistor
0
24.5
18.2
0
33.9
26.0
71.3
83.5
93.3
102.9
46.8
36.4
64.5
72.9
82.4
90.8
99.3
108.8
25.6
24.6
35.9
42.5
46.2
110.9
Tr
Br Di
Br
Di
UN Di
VN
Di
WN
Tr
UN Tr
VN
Tr
WN
Tr
WP
Th
CR
RN CR
SN CR
TN
CR
RP CR
SP CR
TP
Di
WP
Di
VP
Tr
VP
Di
UP
Tr
UP
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
7
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
02/14 Rev. 4
MechanicalCharacteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Mounting Torque Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb
Creepage Distance ds Terminal to Terminal 6.47 — — mm
Terminal to Baseplate 14.27 — — mm
Clearance da Terminal to Terminal 6.47 — — mm
Terminal to Baseplate 12.33 — — mm
Weight m 300 g
Flatness of Baseplate ec On Centerline X, Y*5 ±0 — ±100 µm
Recommended Operating Conditions, Ta = 25°C
DC Supply Voltage VCC Applied Across P-N/P1-N1 Terminals — 600 850 Volts
Gate-Emitter Drive Voltage VGE(on) Applied Across GB-Es/ 13.5 15.0 16.5 Volts
G*P-*/G*N-Es (* = U, V, W) Terminals
External Gate Resistance RG Per Switch Inverter IGBT 8.2 — 82 Ω
Per Switch Brake IGBT 13 — 130 Ω
*5 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
– : CONCAVE
+ : CONVEX
– : CONCAVE
X
Y
+ : CONVEX
MOUNTING
SIDE
MOUNTING SIDE
MOUNTING SIDE
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
8
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
02/14 Rev. 4
0.5 1.0 2.01.5 3.02.5
101
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(INVERTER PART - TYPICAL)
102
103
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
10
6 8 10 1412 16 18 20
8
6
4
2
0
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
0 2 4 6 8 10
0
150
25
50
75
100
125
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
3.5
3.0
0
2.0
2.5
1.0
1.5
0.5
15075 100 12525 50
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
Tj = 25°C
IC = 150A
IC = 75A
IC = 30A
VGE = 20V
10
11
12
13.5
9
Tj = 25°C
0
15
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
(Chip)(Chip)
(Chip)(Chip)
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
9
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
02/14 Rev. 4
CAPACITANCE, Cies, Coes, Cres, (nF)
SWITCHING TIME, (ns)
SWITCHING TIME, (ns)
SWITCHING TIME, (ns)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE VS. VCE
(INVERTER PART - TYPICAL)
100102
102
101
100
10-1
10-2
101
10-1
COLLECTOR CURRENT, IC, (AMPERES)
103
100101
102
100
101
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
102
COLLECTOR CURRENT, IC, (AMPERES)
103
100101
102
100
101
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
102
EXTERNAL GATE RESISTANCE, RG, (Ω)
103
100101
102
101
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
102
VGE = 0V
Cies
Coes
Cres
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
RG = 8.2Ω
Tj = 150°C
Inductive Load
tf
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
RG = 8.2Ω
Tj = 125°C
Inductive Load
tf
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
IC = 75A
Tj = 125°C
Inductive Load tf
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
10
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
02/14 Rev. 4
GATE CHARGE, QG, (nC)
GATE CHARGE VS. VGE
(INVERTER PART)
20
0
16
12
8
4
0
50 250150 200100
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(INVERTER PART - TYPICAL)
103
101
102
101
102
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(INVERTER PART - TYPICAL)
103
100101
102
101
102
EXTERNAL GATE RESISTANCE, RG, (Ω)
103
100101
102
101
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
102
SWITCHING TIME, (ns)
GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY, Irr (A), trr (ns)
REVERSE RECOVERY, Irr (A), trr (ns)
IC = 75A
VCC = 600V
100
VCC = 600V
VGE = ±15V
RG = 8.2Ω
Tj = 125°C
Inductive Load
Irr
trr
VCC = 600V
VGE = ±15V
RG = 8.2Ω
Tj = 150°C
Inductive Load
Irr
trr
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
IC = 75A
Tj = 150°C
Inductive Load
tf
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
11
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
02/14 Rev. 4
EXTERNAL GATE RESISTANCE, RG, (Ω)
102
100101
101
100
102
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(INVERTER PART - TYPICAL)
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
100101102
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(INVERTER PART - TYPICAL)
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
100101102
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(INVERTER PART - TYPICAL)
EXTERNAL GATE RESISTANCE, RG, (Ω)
102
100101
101
100
102
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(INVERTER PART - TYPICAL)
REVERSE RECOVERY ENERGY, Err, (mJ)
101
100
10-1
102
101
100
REVERSE RECOVERY ENERGY, Err, (mJ)
101
100
10-1
102
101
100
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECOVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ)
SWITCHING ENERGY, Eon, Eoff, (mJ)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECOVERY ENERGY, Err, (mJ)
VCC = 600V
VGE = ±15V
RG = 8.2Ω
Tj = 125°C
Inductive Load,
Per Pulse
Eon
Eoff
Err
VCC = 600V
VGE = ±15V
RG = 8.2Ω
Tj = 150°C
Inductive Load,
Per Pulse
Eon
Eoff
Err
VCC = 600V
VGE = ±15V
IC = 75A
Tj = 125°C
Inductive Load,
Per Pulse
Eon
Eoff
Err
VCC = 600V
VGE = ±15V
IC = 75A
Tj = 150°C
Inductive Load,
Per Pulse
Eon
Eoff
Err
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
12
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
02/14 Rev. 4
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(BRAKE PART - TYPICAL)
3.5
3.0
0
2.0
2.5
0.5
1.5
1.0
1007525 50
0.5 1.5 2.01.0 2.5
100
101
FORWARD CURRENT IF, (AMPERES)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(BRAKE PART - TYPICAL)
102
COLLECTOR CURRENT, IC, (AMPERES)
103
100101
102
100
101
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(BRAKE PART - TYPICAL)
102
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(INVERTER PART - MAXIMUM)
100
10-1
10-2
10-5 10-3
10-4 10-2 10-1 100101
Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
FORWARD VOLTAGE, VF, (VOLTS)
SWITCHING TIME, (ns)
0
Tj = 25°C
Tj = 125°C
Tj = 150°C
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
RG = 13Ω
Tj = 125°C
Inductive Load
tf
Tj = 25°C
Tj = 125°C
Tj = 150°C
10-3
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.25 K/W
(IGBT)
Rth(j-c) =
0.40 K/W
(FWDi) (Chip)
(Chip)
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
13
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
02/14 Rev. 4
EXTERNAL GATE RESISTANCE, RG, (Ω)
103
101102
102
101
SWITCHING TIME VS.
GATE RESISTANCE
(BRAKE - TYPICAL)
103
EXTERNAL GATE RESISTANCE, RG, (Ω)
103
101102
102
101
SWITCHING TIME VS.
GATE RESISTANCE
(BRAKE - TYPICAL)
103
COLLECTOR CURRENT, IC, (AMPERES)
FORWARD CURRENT, IF, (AMPERES)
101
100101
100
10-1
102
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(BRAKE PART - TYPICAL)
COLLECTOR CURRENT, IC, (AMPERES)
103
100101
102
100
101
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(BRAKE PART - TYPICAL)
102
SWITCHING TIME, (ns) SWITCHING TIME, (ns)
SWITCHING TIME, (ns)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECOVERY ENERGY, Err, (mJ)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
IC = 50A
Tj = 150°C
Inductive Load
tf
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
IC = 50A
Tj = 125°C
Inductive Load
tf
VCC = 600V
VGE = ±15V
RG = 13Ω
Tj = 125°C
Inductive Load,
Per Pulse
Eon
Eoff
Err
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
RG = 13Ω
Tj = 150°C
Inductive Load
tf
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
14
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
02/14 Rev. 4
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(BRAKE PART - TYPICAL)
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(BRAKE PART - TYPICAL)
EXTERNAL GATE RESISTANCE, RG, (Ω)
102
101102
101
100
103
EXTERNAL GATE RESISTANCE, RG, (Ω)
102
101102
101
100
103
COLLECTOR CURRENT, IC, (AMPERES)
FORWARD CURRENT, IF, (AMPERES)
100101102
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(BRAKE PART - TYPICAL)
101
100
10-1
FORWARD CURRENT, IF, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(BRAKE PART - TYPICAL)
103
100101
102
101
102
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECOVERY ENERGY, Err, (mJ)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECOVERY ENERGY, Err, (mJ)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECOVERY ENERGY, Err, (mJ)
REVERSE RECOVERY, Irr (A), trr (ns)
VCC = 600V
VGE = ±15V
IC/IF = 50A
Tj = 125°C
Inductive Load,
Per Pulse
Eon
Eoff
Err
VCC = 600V
VGE = ±15V
RG = 13Ω
Tj = 125°C
Inductive Load
Irr
trr
VCC = 600V
VGE = ±15V
RG = 13Ω
Tj = 150°C
Inductive Load,
Per Pulse
Eon
Eoff
Err
VCC = 600V
VGE = ±15V
IC/IF = 50A
Tj = 125°C
Inductive Load,
Per Pulse
Eon
Eoff
Err
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
15
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
02/14 Rev. 4
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
REVERSE RECOVERY, Irr (A), trr (ns)
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(BRAKE PART - MAXIMUM)
100
10-1
10-2
10-3
10-5 10-3
10-4 10-2 10-1 100101
FORWARD CURRENT, IF, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(BRAKE PART - TYPICAL)
103
100101
102
101
102
Zth = Rth • (NORMALIZED VALUE)
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.35 K/W
(IGBT)
Rth(j-c) =
0.63 K/W
(FWDi)
VCC = 600V
VGE = ±15V
RG = 13Ω
Tj = 150°C
Inductive Load
Irr
trr
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(CONVERTER PART - MAXIMUM)
100
10-1
10-2
10-3
10-5 10-3
10-4 10-2 10-1 100101
Zth = Rth • (NORMALIZED VALUE)
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.24 K/W
0.4 0.6 1.0 1.20.8 1.61.4
100
101
FORWARD VOLTAGE, VF, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(CONVERTER PART - TYPICAL)
102
FORWARD CURRENT IF, (AMPERES)
Tj = 25°C
Tj = 125°C
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
16
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
02/14 Rev. 4
RESISTANCE, R (kΩ)
TEMPERATURE, T (°C)
TEMPERATURE CHARACTERISTICS
(NTC THERMISTOR PART - TYPICAL)
102
-50 25 50 100750-25
101
100
10-1
125