CM75MXA-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com NX-Series CIB Module (3O Converter + 3O Inverter + Brake) 75 Amperes/1200 Volts A AG D AJ AK AH E F K G J K H L K L K K L K M K AA AB C K DETAIL "A" Z AN 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 DETAIL "B" X 54 55 56 K 57 P 60 29 K28 K W 2 3 4 5 K T 6 7 8 K L P(54-56) B AL 24 K23 AF 9 10 11 12 13 14 15 16 17 18 19 20 21 22 K L K K K L K DETAIL "B" Y N (4 PLACES) L DETAIL "A" AD S 25 W 1 AE AC Tolerance Otherwise Specified (mm) Division of Dimension Tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1.2 The tolerance of size between terminals is assumed to 0.4 P1(48-49) GUP(13) GVP(18) GWP(23) U(14-15) V(19-20) W(24-25) GUN(40) GVN(33) GWN(31) TH1 (28) B(52-53) R S T (1-2) (5-6) (9-10) N(59-61) U V AM R 26 K K 61 Q 27 L L 58 59 30 K TH2 (29) NTC GB(41) N1(44-45) Es(32) Es1(39) Caution: Each (two or three) pin terminal of P/N/P1/N1/U/V/W/B/R/S/T is connected in the module, however, all three pins should be used for external wiring. Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N P Q R S T U 02/14 Rev. 4 Inches 4.79 2.44 0.51 4.49 4.330.02 3.89 3.72 0.16 0.51 0.15 0.45 0.9 0.22 Dia. 2.13 1.53 1.970.02 2.26 0.30 0.102 Dia. Millimeters 121.7 62.0 13.0 114.05 110.00.5 99.0 94.5 4.06 13.09 3.81 11.43 22.86 5.5 Dia. 54.2 39.0 50.00.5 57.5 7.75 2.6 Dia. Dimensions V W X Y Z AA AB AC AD AE AF AG AH AJ AK AL AM AN Inches 0.088 Dia. 0.46 0.16 0.59 0.27 0.81 0.67 0.12 0.14 0.03 0.15 0.05 0.025 0.29 0.05 0.49 0.12 0.17 Dia. Millimeters 2.25 Dia. 11.66 4.2 15.0 7.0 20.5 17.0 3.0 3.5 0.8 3.75 1.15 0.65 7.4 1.2 12.5 3.0 4.3 Dia. Description: CIBs are low profile and thermally efficient. Each module consists of a three-phase diode converter section, a three-phase inverter section and a brake circuit. A thermistor is included in the package for sensing the baseplate temperature. 6th Generation CSTBT chips yield low loss. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM75MXA-24S is a 1200V (VCES), 75 Ampere CIB Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 75 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75MXA-24S NX-Series CIB Module (3O Converter + 3O Inverter + Brake) 75 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25C unless otherwise specified Inverter Part IGBT/Diode Characteristics Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts Gate-Emitter Voltage (VCE = 0V) VGES 20 Volts Collector Current (DC, TC = 122C)*2,*4 IC 75 Amperes Collector Current (Pulse, Repetitive)*3 ICRM 150 Amperes Ptot 600 Watts Total Power Dissipation (TC = 25C)*2,*4 Emitter Current*2 *1 75 Amperes Emitter Current (Pulse, Repetitive)*3 IERM*1 IE 150 Amperes Maximum Junction Temperature, Instantaneous Event (Overload) Tj(max) 175 C Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts Gate-Emitter Voltage (VCE = 0V) VGES 20 Volts IC 50 Amperes ICRM 100 Amperes Ptot 425 Watts VRRM 1200 Volts Brake Part IGBT/Diode Collector Current (Pulse, Repetitive)*3 Tj(max) 175 C 110.9 71.3 0 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 Di Br CR RN 58 59 47.0 48.0 CR CR SN TN CR RP 2 24.5 0 1 CR CR SP TP 3 4 5 6 7 8 Tr Di VN WN Tr WN 17.2 30 Th 29 28 27 Di Tr WP Tr Di Tr Di WP UP UP VP VP 60 61 Di VN Tr UN 26 25 24 23 19.4 24.6 25.6 35.9 42.5 46.2 9 10 11 12 13 14 15 16 17 18 19 20 21 22 108.8 57 Di UN 99.3 31.2 32.6 Tr Br 56 90.8 55 82.4 54 72.9 15.2 18.1 64.5 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. 0 Maximum Junction Temperature, Instantaneous Event (Overload) 93.3 Amperes Amperes 102.9 50 100 83.5 IF IFRM Forward Current (Pulse, Repetitive)*3 18.2 Forward Current*2 33.9 Repetitive Peak Reverse Voltage (VGE = 0V) 46.8 Total Power Dissipation (TC = 25C)*2,*4 36.4 Collector Current (DC, TC = 125C)*2,*4 26.0 Characteristics LABEL SIDE Each mark points to the center position of each chip. Tr*P / Tr*N / TrBr (* = U/V/W): IGBT DiBr: Clamp Di Th: NTC Thermistor 2 Di*P / Di*N (* = U/V/W): FWDi CR*P / CR*N (* = R/S/T): Conv Di 02/14 Rev. 4 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75MXA-24S NX-Series CIB Module (3O Converter + 3O Inverter + Brake) 75 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25C unless otherwise specified Converter Part Diode Characteristics Symbol Rating Units Repetitive Peak Reverse Voltage (VGE = 0V) VRRM 1600 Volts Recommended AC Input Voltage (RMS) Ea 440 Volts DC Output Current (3-Phase Full Wave Rectifying, TC = 125C)*4 IO 75 Amperes IFSM 750 Amperes I2t 2340 A2s Tj(max) 150 C Symbol Rating Units Surge Forward Current (Sine Half Wave 1 Cycle Peak Value, f = 60Hz, Non-repetative) Current Square Time (Value for One Cycle of Surge Current) Maximum Junction Temperature, Instantaneous Event (Overload) Module Characteristics Tj(op) -40 ~ +150 C Storage Temperature Tstg -40 ~ +125 C 110.9 71.3 0 *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. 93.3 Operating Junction Temperature, Continuous Operation (Under Switching) 102.9 C 83.5 Volts 125 33.9 2500 26.0 VISO TC(max) Maximum Case Temperature*4 18.2 Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) 0 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 Di Br 59 47.0 48.0 CR CR SN TN 3 4 5 6 7 8 17.2 30 Th 29 28 27 26 25 24 23 19.4 24.6 25.6 35.9 42.5 46.2 9 10 11 12 13 14 15 16 17 18 19 20 21 22 46.8 2 24.5 0 1 CR CR SP TP 36.4 CR RP Tr WN Di Tr WP Tr Di Tr Di WP UP UP VP VP 60 61 Tr Di VN WN 108.8 CR RN 58 Di VN Tr UN 99.3 57 Di UN 90.8 31.2 32.6 Tr Br 56 82.4 55 72.9 54 64.5 15.2 18.1 LABEL SIDE Each mark points to the center position of each chip. Tr*P / Tr*N / TrBr (* = U/V/W): IGBT DiBr: Clamp Di Th: NTC Thermistor 02/14 Rev. 4 Di*P / Di*N (* = U/V/W): FWDi CR*P / CR*N (* = R/S/T): Conv Di 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75MXA-24S NX-Series CIB Module (3O Converter + 3O Inverter + Brake) 75 Amperes/1200 Volts Electrical Characteristics, Tj = 25C unless otherwise specified Inverter Part IGBT/Diode Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V -- -- 1.0 mA Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V -- -- 0.5 A Gate-Emitter Threshold Voltage VGE(th) IC = 7.5mA, VCE = 10V 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 75A, VGE = 15V, Tj = 25C*6 -- 1.80 2.25 Volts (Terminal) IC = 75A, VGE = 15V, Tj = 125C*6 -- 2.00 -- Volts IC = 75A, VGE = 15V, Tj = 150C*6 -- 2.05 -- Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 75A, VGE = 15V, Tj = 25C*6 -- 1.70 2.15 Volts (Chip) IC = 75A, VGE = 15V, Tj = 125C*6 -- 1.90 -- Volts 150C*6 -- 1.95 -- Volts -- -- 7.5 nF -- -- 1.5 nF -- -- 0.13 nF -- 175 -- nC -- -- 300 ns IC = 75A, VGE = 15V, Tj = Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Emitter-Collector Voltage Emitter-Collector Voltage QG VCE = 10V, VGE = 0V VCC = 600V, IC = 75A, VGE = 15V td(on) tr VCC = 600V, IC = 75A, VGE = 15V, -- -- 200 ns td(off) RG = 8.2, Inductive Load -- -- 600 ns -- -- 300 ns VEC*1 tf IE = 75A, VGE = 0V, Tj = 25C*6 -- 1.80 2.25 Volts (Terminal) IE = 75A, VGE = 0V, Tj = 125C*6 -- 1.80 -- Volts IE = 75A, VGE = 0V, Tj = 150C*6 -- 1.80 -- Volts VEC IE = 75A, VGE = 0V, Tj = 25C*6 -- 1.70 2.15 Volts (Chip) IE = 75A, VGE = 0V, Tj = 125C*6 -- 1.70 -- Volts *1 IE = 75A, VGE = 0V, Tj = 150C*6 -- 1.70 -- Volts VCC = 600V, IE = 75A, VGE = 15V -- -- 300 ns Reverse Recovery Charge *1 Qrr RG = 8.2, Inductive Load -- 4.0 -- C Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 75A, -- 7.3 -- mJ Reverse Recovery Time trr*1 Turn-off Switching Energy per Pulse Eoff VGE = 15V, RG = 8.2, -- 8.0 -- mJ Reverse Recovery Energy per Pulse Err*1 Tj = 150C, Inductive Load -- 6.9 -- mJ Main Terminals-Chip, -- -- 4.0 m -- 0 -- Internal Lead Resistance RCC' + EE' 110.9 93.3 102.9 71.3 33.9 26.0 Per Switch 18.2 0 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 CR RN 58 59 Tr UN CR CR SN TN 2 24.5 0 1 CR CR SP TP 3 4 5 6 7 8 Th 29 28 27 26 25 24 23 19.4 24.6 25.6 35.9 42.5 46.2 9 10 11 12 13 14 15 16 17 18 19 20 21 22 46.8 CR RP 17.2 30 Di Tr WP Tr Di Tr Di WP UP UP VP VP 60 61 Tr Di VN WN Tr WN 108.8 57 Di VN 99.3 56 47.0 48.0 Di UN Di Br 90.8 31.2 32.6 Tr Br 82.4 55 72.9 54 64.5 15.2 18.1 36.4 rg *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Pulse width and repetition rate should be such as to cause negligible temperature rise. 0 Internal Gate Resistance 83.5 Per Switch,TC = 25C*4 LABEL SIDE Each mark points to the center position of each chip. Tr*P / Tr*N / TrBr (* = U/V/W): IGBT DiBr: Clamp Di Th: NTC Thermistor 4 Di*P / Di*N (* = U/V/W): FWDi CR*P / CR*N (* = R/S/T): Conv Di 02/14 Rev. 4 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75MXA-24S NX-Series CIB Module (3O Converter + 3O Inverter + Brake) 75 Amperes/1200 Volts Electrical Characteristics, Tj = 25C unless otherwise specified Brake Part IGBT/Diode Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V -- -- 1.0 mA Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V -- -- 0.5 A Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 10V 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V, Tj = 25C*6 -- 1.80 2.25 Volts (Terminal) IC = 50A, VGE = 15V, Tj = 125C*6 -- 2.00 -- Volts IC = 50A, VGE = 15V, Tj = 150C*6 -- 2.05 -- Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V, Tj = 25C*6 -- 1.70 2.15 Volts (Chip) IC = 50A, VGE = 15V, Tj = 125C*6 -- 1.90 -- Volts 150C*6 -- 1.95 -- Volts -- -- 5.0 nF -- -- 1.0 nF -- -- 0.08 nF -- 117 -- nC -- -- 300 ns IC = 50A, VGE = 15V, Tj = Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time QG VCE = 10V, VGE = 0V VCC = 600V, IC = 50A, VGE = 15V td(on) tr VCC = 600V, IC = 50A, VGE = 15V, -- -- 200 ns td(off) RG = 13, Inductive Load -- -- 600 ns -- -- 300 ns Reverse Current IRRM tf VR = VRRM, VGE = 0V -- -- 1.0 mA Forward Voltage VF IF = 50A, VGE = 0V, Tj = 25C*6 -- 1.80 2.25 Volts (Terminal) IF = 50A, VGE = 0V, Tj = 125C*6 -- 1.80 -- Volts 150C*6 -- 1.80 -- Volts VF IF = 50A, VGE = 0V, Tj = 25C*6 -- 1.70 2.15 Volts (Chip) IF = 50A, VGE = 0V, Tj = 125C*6 -- 1.70 -- Volts IF = 50A, VGE = 0V, Tj = 150C*6 -- 1.70 -- Volts IF = 50A, VGE = 0V, Tj = Forward Voltage Reverse Recovery Time trr VCC = 600V, IF = 50A, VGE = 15V -- -- 300 ns Reverse Recovery Charge Qrr RG = 13, Inductive Load -- 2.7 -- C Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IF = 50A, -- 5.5 -- mJ Turn-off Switching Energy per Pulse Eoff VGE = 15V, RG = 13, -- 5.3 -- mJ Reverse Recovery Energy per Pulse Err Tj = 150C, Inductive Load -- 4.5 -- mJ Internal Gate Resistance rg -- 0 -- *6 Pulse width and repetition rate should be such as to cause negligible temperature rise. 02/14 Rev. 4 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75MXA-24S NX-Series CIB Module (3O Converter + 3O Inverter + Brake) 75 Amperes/1200 Volts Electrical Characteristics, Tj = 25C unless otherwise specified (continued) Converter Part Diode Characteristics Repetitive Peak Reverse Current Forward Voltage Symbol Test Conditions Min. Typ. Max. Units IRRM VR = VRRM, Tj = 150C -- -- 20 mA VF IF = 75A*6 -- 1.2 1.6 Volts Test Conditions Min. Typ. Max. Units 4.85 5.00 5.15 k -7.3 -- +7.8 % (Terminal) NTC Thermistor Part Characteristics Symbol Zero Power Resistance R25 Deviation of Resistance R/R B Constant B(25/50) TC = 25C*4 TC = 100C*4, R100 = 493 -- 3375 -- K P25 TC = 25C*4 -- -- 10 mW Thermal Resistance, Junction to Case*4 Rth(j-c)Q Per Inverter IGBT -- -- 0.25 K/W Thermal Resistance, Junction to Case*4 Rth(j-c)D Per Inverter Diode -- -- 0.40 K/W Thermal Resistance, Junction to Case*4 Rth(j-c)Q Per Brake IGBT -- -- 0.35 K/W Thermal Resistance, Junction to Case*4 Rth(j-c)D Per Brake Diode -- -- 0.63 K/W Case*4 Rth(j-c)D Per Converter Diode -- -- 0.24 K/W Rth(c-f) Thermal Grease Applied, -- 15 -- K/kW Power Dissipation Approximate by Equation*7 Thermal Resistance Characteristics 110.9 93.3 102.9 83.5 71.3 33.9 26.0 0 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 Di Br 58 59 47.0 48.0 CR CR SN TN CR RP 2 24.5 0 1 CR CR SP TP 3 4 5 6 7 8 Tr WN 17.2 30 Th 29 28 27 Di Tr WP Tr Di Tr Di WP UP UP VP VP 60 61 Tr Di VN WN 26 25 24 23 19.4 24.6 25.6 35.9 42.5 46.2 9 10 11 12 13 14 15 16 17 18 19 20 21 22 108.8 CR RN Di VN Tr UN 99.3 57 Di UN 90.8 Tr Br 56 82.4 55 72.9 54 31.2 32.6 64.5 15.2 18.1 46.8 *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Pulse width and repetition rate should be such as to cause negligible temperature rise. R25 1 1 *7 B(25/50) = In( )/( - ) R50 T25 T50 R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [C] + 273.15 = 298.15 [K] R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [C] + 273.15 = 323.15 [K] *8 Typical value is measured by using thermally conductive grease of = 0.9 [W/(m * K)]. Per 1 Module*8 36.4 Case to Heatsink*4 18.2 Contact Thermal Resistance, 0 Thermal Resistance, Junction to LABEL SIDE Each mark points to the center position of each chip. Tr*P / Tr*N / TrBr (* = U/V/W): IGBT DiBr: Clamp Di Th: NTC Thermistor 6 Di*P / Di*N (* = U/V/W): FWDi CR*P / CR*N (* = R/S/T): Conv Di 02/14 Rev. 4 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75MXA-24S NX-Series CIB Module (3O Converter + 3O Inverter + Brake) 75 Amperes/1200 Volts MechanicalCharacteristics, Tj = 25C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Mounting Torque Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb Creepage Distance ds Terminal to Terminal 6.47 -- -- mm Terminal to Baseplate 14.27 -- -- mm Clearance da Weight m Flatness of Baseplate ec Terminal to Terminal 6.47 -- -- mm Terminal to Baseplate 12.33 -- -- mm On Centerline X, Y*5 0 -- 100 m Applied Across P-N/P1-N1 Terminals -- 600 850 Volts Applied Across GB-Es/ 13.5 15.0 16.5 Volts Per Switch Inverter IGBT 8.2 -- 82 Per Switch Brake IGBT 13 -- 130 300 g Recommended Operating Conditions, Ta = 25C DC Supply Voltage VCC Gate-Emitter Drive Voltage VGE(on) G*P-*/G*N-Es (* = U, V, W) Terminals External Gate Resistance RG - : CONCAVE + : CONVEX *5 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. MOUNTING SIDE MOUNTING SIDE 02/14 Rev. 4 Y MOUNTING SIDE X - : CONCAVE + : CONVEX 7 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75MXA-24S NX-Series CIB Module (3O Converter + 3O Inverter + Brake) 75 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) OUTPUT CHARACTERISTICS (INVERTER PART - TYPICAL) 125 15 Tj = 25C 12 100 11 75 50 10 25 9 0 (Chip) 0 2 4 6 8 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 3.0 2.5 2.0 1.5 1.0 0.5 0 10 Tj = 25C Tj = 125C Tj = 150C (Chip) 25 0 50 75 100 125 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (INVERTER PART - TYPICAL) Tj = 25C 8 IC = 150A 6 IC = 75A 4 IC = 30A 2 0 150 103 10 (Chip) 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 8 3.5 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V 13.5 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 150 20 Tj = 25C Tj = 125C Tj = 150C 102 101 0.5 (Chip) 1.0 1.5 2.0 2.5 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 02/14 Rev. 4 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75MXA-24S NX-Series CIB Module (3O Converter + 3O Inverter + Brake) 75 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) CAPACITANCE VS. VCE (INVERTER PART - TYPICAL) 103 VGE = 0V 101 100 Coes 10-1 Cres 10-2 10-1 tf 100 101 102 td(on) 101 100 100 102 101 102 COLLECTOR CURRENT, IC, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (INVERTER PART - TYPICAL) 103 td(off) SWITCHING TIME, (ns) tf SWITCHING TIME, (ns) VCC = 600V tr VGE = 15V RG = 8.2 Tj = 125C Inductive Load COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 102 td(on) 101 100 100 VCC = 600V tr VGE = 15V RG = 8.2 Tj = 150C Inductive Load VCC = 600V VGE = 15V IC = 75A Tj = 125C Inductive Load td(off) tf 102 td(on) tr 101 COLLECTOR CURRENT, IC, (AMPERES) 02/14 Rev. 4 td(off) Cies SWITCHING TIME, (ns) CAPACITANCE, Cies, Coes, Cres, (nF) 102 102 101 100 101 102 EXTERNAL GATE RESISTANCE, RG, () 9 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75MXA-24S NX-Series CIB Module (3O Converter + 3O Inverter + Brake) 75 Amperes/1200 Volts SWITCHING TIME VS. GATE RESISTANCE (INVERTER PART - TYPICAL) VCC = 600V VGE = 15V IC = 75A Tj = 150C Inductive Load 103 td(off) REVERSE RECOVERY, Irr (A), trr (ns) SWITCHING TIME, (ns) 103 REVERSE RECOVERY CHARACTERISTICS (INVERTER PART - TYPICAL) tf 102 td(on) tr 101 100 102 101 102 EXTERNAL GATE RESISTANCE, RG, () EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (INVERTER PART - TYPICAL) GATE CHARGE VS. VGE (INVERTER PART) 20 VCC = 600V VGE = 15V RG = 8.2 Tj = 150C Inductive Load Irr trr 101 100 101 EMITTER CURRENT, IE, (AMPERES) 10 102 101 100 102 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY, Irr (A), trr (ns) 103 101 VCC = 600V VGE = 15V RG = 8.2 Tj = 125C Inductive Load Irr trr 102 IC = 75A VCC = 600V 16 12 8 4 0 0 50 100 150 200 250 GATE CHARGE, QG, (nC) 02/14 Rev. 4 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75MXA-24S NX-Series CIB Module (3O Converter + 3O Inverter + Brake) 75 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) 10-1 100 101 101 SWITCHING ENERGY, Eon, Eoff, (mJ) 100 101 102 VCC = 600V VGE = 15V RG = 8.2 Tj = 125C Inductive Load, Per Pulse Eon Eoff Err REVERSE RECOVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) 101 100 10-1 100 100 102 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) 102 VCC = 600V VGE = 15V IC = 75A Tj = 125C Inductive Load, Per Pulse Eon Eoff Err 100 100 101 EXTERNAL GATE RESISTANCE, RG, () 02/14 Rev. 4 101 100 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) 101 101 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 102 102 VCC = 600V VGE = 15V RG = 8.2 Tj = 150C Inductive Load, Per Pulse Eon Eoff Err REVERSE RECOVERY ENERGY, Err, (mJ) HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) 102 101 VCC = 600V VGE = 15V IC = 75A Tj = 150C Inductive Load, Per Pulse Eon Eoff Err 100 100 101 102 EXTERNAL GATE RESISTANCE, RG, () 11 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART - MAXIMUM) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (BRAKE PART - TYPICAL) 100 3.5 10-1 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.25 K/W (IGBT) Rth(j-c) = 0.40 K/W (FWDi) 10-2 10-3 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth * (NORMALIZED VALUE) CM75MXA-24S NX-Series CIB Module (3O Converter + 3O Inverter + Brake) 75 Amperes/1200 Volts 10-5 10-4 10-3 10-2 10-1 100 1.5 1.0 0.5 (Chip) 0 25 50 75 100 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (BRAKE PART - TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (BRAKE PART - TYPICAL) 103 SWITCHING TIME, (ns) FORWARD VOLTAGE, VF, (VOLTS) 2.0 TIME, (s) 101 Tj = 25C Tj = 125C Tj = 150C 1.0 102 VCC = 600V VGE = 15V RG = 13 Tj = 125C Inductive Load tf td(off) td(on) tr 101 (Chip) 1.5 2.0 FORWARD CURRENT IF, (AMPERES) 12 2.5 COLLECTOR CURRENT, IC, (AMPERES) 102 100 0.5 3.0 0 101 Tj = 25C Tj = 125C Tj = 150C 2.5 100 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) 02/14 Rev. 4 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75MXA-24S NX-Series CIB Module (3O Converter + 3O Inverter + Brake) 75 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (BRAKE PART - TYPICAL) 103 VCC = 600V VGE = 15V RG = 13 Tj = 150C Inductive Load 102 td(off) tf SWITCHING TIME, (ns) SWITCHING TIME, (ns) 103 SWITCHING TIME VS. GATE RESISTANCE (BRAKE - TYPICAL) td(on) tr 101 100 100 101 td(on) VCC = 600V VGE = 15V IC = 50A Tj = 125C Inductive Load 102 COLLECTOR CURRENT, IC, (AMPERES) EXTERNAL GATE RESISTANCE, RG, () SWITCHING TIME VS. GATE RESISTANCE (BRAKE - TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (BRAKE PART - TYPICAL) tr td(off) 102 td(on) VCC = 600V VGE = 15V IC = 50A Tj = 150C Inductive Load 102 EXTERNAL GATE RESISTANCE, RG, () 103 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) tf SWITCHING TIME, (ns) 102 101 101 101 tr td(off) 101 101 102 103 02/14 Rev. 4 tf 100 103 VCC = 600V VGE = 15V RG = 13 Tj = 125C Inductive Load, Per Pulse Eon Eoff Err 10-1 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) FORWARD CURRENT, IF, (AMPERES) 13 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75MXA-24S NX-Series CIB Module (3O Converter + 3O Inverter + Brake) 75 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (BRAKE PART - TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (BRAKE PART - TYPICAL) 100 102 VCC = 600V VGE = 15V RG = 13 Tj = 150C Inductive Load, Per Pulse Eon Eoff Err 10-1 100 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) 101 101 101 100 101 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (BRAKE PART - TYPICAL) 103 EXTERNAL GATE RESISTANCE, RG, () 14 103 REVERSE RECOVERY, Irr (A), trr (ns) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) VCC = 600V VGE = 15V IC/IF = 50A Tj = 125C Inductive Load, Per Pulse Eon Eoff Err 102 103 REVERSE RECOVERY CHARACTERISTICS (BRAKE PART - TYPICAL) 102 100 101 102 EXTERNAL GATE RESISTANCE, RG, () COLLECTOR CURRENT, IC, (AMPERES) FORWARD CURRENT, IF, (AMPERES) 101 VCC = 600V VGE = 15V IC/IF = 50A Tj = 125C Inductive Load, Per Pulse Eon Eoff Err VCC = 600V VGE = 15V RG = 13 Tj = 125C Inductive Load 102 101 100 Irr trr 101 102 FORWARD CURRENT, IF, (AMPERES) 02/14 Rev. 4 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com REVERSE RECOVERY CHARACTERISTICS (BRAKE PART - TYPICAL) REVERSE RECOVERY, Irr (A), trr (ns) 103 VCC = 600V VGE = 15V RG = 13 Tj = 150C Inductive Load 102 Irr trr 101 100 101 102 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth * (NORMALIZED VALUE) CM75MXA-24S NX-Series CIB Module (3O Converter + 3O Inverter + Brake) 75 Amperes/1200 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (BRAKE PART - MAXIMUM) 100 10-1 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.35 K/W (IGBT) Rth(j-c) = 0.63 K/W (FWDi) 10-2 10-3 10-5 10-4 10-3 FORWARD CURRENT, IF, (AMPERES) 101 Tj = 25C Tj = 125C 0.8 1.0 1.2 1.4 FORWARD VOLTAGE, VF, (VOLTS) 02/14 Rev. 4 1.6 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth * (NORMALIZED VALUE) FORWARD CURRENT IF, (AMPERES) 102 0.6 10-1 100 101 TIME, (s) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (CONVERTER PART - TYPICAL) 100 0.4 10-2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (CONVERTER PART - MAXIMUM) 100 10-1 10-2 10-3 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.24 K/W 10-5 10-4 10-3 10-2 10-1 100 101 TIME, (s) 15 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75MXA-24S NX-Series CIB Module (3O Converter + 3O Inverter + Brake) 75 Amperes/1200 Volts TEMPERATURE CHARACTERISTICS (NTC THERMISTOR PART - TYPICAL) RESISTANCE, R (k) 102 101 100 10-1 -50 -25 0 25 50 75 100 125 TEMPERATURE, T (C) 16 02/14 Rev. 4