MAXIMUM RATINGS MPS2222,A* Rating Symbol |MPS2222|MPS2222A| Unit CASE 29-04, STYLE 1 Collector-Emitter Voltage VcEO 30 40 Vde TO-92 (TO-226AA) Collector-Base Voltage VCBO 60 75 Vde - 3 Collector Emitter-Base Voltage VEBO 5.0 6.0 Vde - Collector Current Continuous Ic 600 mAdc 2 Total Device Dissipation @ Ta = 25C Pp 625 mw Base Derate above 25C 5.0 , mwWwerc Total Device Dissipation @ Tc = 25C Pp 1.5 Watts 1 Emitter Derate above 25C 12 mWwrc Operating and Storage Junction Ty. Tstg 55 to +150 c Temperature Range GENERAL PURPOSE TRANSISTORS THERMAL CHARACTERISTICS ; Charactoristic Symbol Max Unit NPN SILICON Thermal Resistance, Junction to Ambient Raja 200 CW *MPS2222A is a Motorola Thermal Resistance, Junction to Case Rec 83.3 CAV designated preferred device. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Characteristic | Symbol | Min Max Unit OFF CHARACTERISTICS Coliector-Emitter Breakdown Voltage V(BRICEO Vde (Ic = 10 mAdc, Ip = 0) MPS2222 .30 _ MPS2222A 40 Collector-Base Breakdown Voltage V(BRICBO Vde {Ic = 10 wAde, Ip = 0) MPS2222 60 MPS2222A 75 _ Emitter-Base Breakdown Voltage ViBRJEBO Vde (le = 10 wAde, Ice = 0) MPS2222 5.0 _ MPS2222A 6.0 _- Collector Cutoff Current ICEX _ 10 nAdc (Vce = 60 Vdc, VEB(off) = 3.0 Vde) MPS2222A Collector Cutoff Current IcBo pAdc {Veg = 50 Vde, Ie = 0) MPS2222 0.01 {Vcg = 60 Vde, IE = 0) MPS2222A 0.01 {Veg = 50 Vde, Ip = 0, Ta = 125C} MPS2222 _ 10 (VB = 50 Vde, Ie = 0, Ta = 125C) MPS2222A =_ 10 Emitter Cutoff Current \EBO 100 nAdc (VeB = 3.0 Vdc, Ic = 0) MPS2222A Base Cutoff Current IBL _ 20 nAde (Voce = 60 Vde, VeB(off} = 3.0 Vde) MPS2222A ON CHARACTERISTICS DC Current Gain hee - {l = 0.1 mAdc, Vee = 10 Vde) 35 {lc = 1.0 mAdc, Veg = 10 Vdc) 50 _ {lc = 10 mAde, Vee = 10 Vde} 75 _- {Ic = 10 mAdc, Voce = 10 Vde, Ta = 55C) MPS2222A only 35 _ {Ic = 150 mAdc, Voce = 10 Vdo}(1) 100 300 {Il = 150 mAde, Voge = 1.0 Vde}(1) 50 - {I = 500 mAdc, Voce = 10 Vde)(1) MPS2222 30 _ MPS22224 40 _ Collector-Emitter Saturation Voltage(1} VCE(sat) Vde (lc = 150 mAdc, Ig = 15 mAdc) MPS2222 _ 0.4 . MPS2222A _ 0.3 (lo = 500 mAde, Ig = 50 mAde) MPS2222 ~ 1.6 MPS22224 _ 1.0 2-280 Motorola Smail-Signal Transistors, FETs and Diodes Device DataELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.) MPS2222, A Characteristic Symbol Min Max Unit Base-Emitter Saturation Voltage(1) VBE(sat} Vdc = (Ig = 150 mAde, fg = 15 mAdc) MPS2222 _ 1.3 MPS2222A 0.6 1.2 {Ic = 500 mAdc, Ig = 50 mAdc) MPS2222 _ 2.6 MPS2222A _ 2.0 SMALL-SIGNAL CHARACTERISTICS _ Current-Gain Bandwidth Product(2) ; fT MHz {Ie = 20 mAde, Veg = 20 Vde, f = 100 MHz) MPS2222 250 ~ MPS2222A 300 -- Output Capacitance Cobo 8.0 pF (Vcp = 10 Vde, Ig = 6, f = 1.0 MHz) Input Capacitance Cibo pF (Veg = 0.5 Vde, ic = 0, f = 1.0 MHz) MPS2222 _ 30 MPS2222A _ 25 Input Impedance - hie kQ (l = 1.0 mAde, Vee = 10 Vde, fF = 1.0 kHz} MPS2222A 2.0 8.0 (I = 10 mAdc, Veg = 10 Vde, f = 1.0 kHz} MPS2222A 0.25 1.25 Voltage Feedback Ratio hre x 10-4 (i = 1.0 mAdc, Veg = 10 Vde, f = 1.0 kHz) MPS2222A _ 8.0 {ic = 10 mAdc, Voce = 10 Vde, f = 1.0 kHz) MPS2222A _ 4.0 Small-Signal Current Gain hfe _ (i = 1.0 mAdc, VcE = 10 Vde, f = 1.0 kHz) MPS2222A 50 300 (ig = 10 mAdc, Veg = 10 Vde, f = 1.0 kHz) MPS2222A 75 375 Output Admittance - hoe pumhos (ic = 1.0 mAde, Vee = 10 Vde, f = 1.0 kHz) MPS2222A 5.0 35 (ic = 10 mAdc, Voge = 10 Vde, f = 1.0 kHz) MPS2222A 25 200 Collector Base Time Constant rb'Cy _ 150 ps (ig = 20 mAdc, Vop = 20 Vde, f = 31.8 MHz) MPS2222A Noise Figure NF _ 4.0 dB (ic = 100 wAdc, Veg = 10 Vde, Rg = 1.0 KO, f = 1.0 kHz) MPS22224 SWITCHING CHARACTERISTICS MPS2222A only Delay Time (Voc = 30 Vde, Vge(off) = 0.5 Vde, td = 10 ns Rise Time Ic = 150 mAde, Igy = 15 mAde) {Figure 1) tr _ 25 ns Storage Time (Voc = 30 Vde, ic = 150 mAde, ts _ 225 ns Fall Time Ip1 = lg2 = 15 mAdc) (Figure 2) tf _ 60 ns {1} Pulse Test: Pulse Width =< 300 us, Duty Cycle < 2.0%. (2) ff is defined as the frequency at which |hfg| extrapolates to unity. SWITCHING TIME EQUIVALENT TEST CIRCUITS FIGURE 1 TURN-ON TIME +30 V FIGURE 2 TURN-OFF TIME - le 1.0 to 100 us, DUTY -| |+-1.0 to 100 #s, DUTY +16V CYCLE ~ 2%. +16V f CYCLE ~ 2% 3 9 a -. o AW ; Tt \ tk T 2V ICg* < 10 pF -14V - iCg* <10pF | iM <2ns . >| k-< 20 ns INOT4 ---4 Scope Rise Time < 4 ns Total shunt capacitance of test jig, connectors, and oscilloscope. AV & Motorola Small-Signal Transistors, FETs and Diodes Device Data 2-281MPS2222, A hrg, DC CURRENT GAIN Voce, COLLECTOR-EMITTER VOLTAGE (VOLTS) FIGURE 3 ~ DC CURRENT GAIN 4000 700 500 300 200 100 70 50 30 VEZ OV 20 VEE IOV 04 O2 O38 O05 07 10 20 30 0 70 10 20 30 50 70 100 . 200 300 ~ 500 700 1.6k \c, COLLECTOR CURRENT (mA) FIGURE 4 COLLECTOR SATURATION REGION 0,005. 0.01 @02 003 O05 0.1 02 03 O5 1.0 20 3.0 5.0 10 20 (30t*D Ig, BASE CURRENT (mA) FIGURE 5 ~ TURN-ON TIME FIGURE 6 TURN-OFE TIME igfig= 10 500 : Voo=30 Ty = 250C mone c/lg = 10 Ia1=t tig ty - 1/8 tf FI = Bc t@ Voc =30V 2 ty @ Vegioff} = 2.0 V = td @ VeBioft) = 0 z at _ = 1 E = + ~ "50 7.0 10 20 30 50 70 100 200 300 500 6.07.0 10 20 30 50 70 100 20 300 500 Ic, COLLECTOR CURRENT (ma) . : Ic, COLLECTOR CURRENT (mA) 2-282 Motorola Small-Signal Transistors, FETs and Diodes Device DataFIGURE 7 FREQUENCY EFFECTS 10 Ic = 1.0 mA, Rg = 150 2 Rg = OPTIMUM 8.0 ee Oe SOURCE a 500 2A, Rg = 200 2 RESISTANCE a = 100 uA, Rg = 20k 2 uw - oe S 6.0 50 nA, Rg = 4.0k2 5 a a c ir 2 2 eS 40 3 y z 2.0 0 0.01002 00507 02 O85 1.0 20 5.0 2 60 100 f, FREQUENCY (kHz) 7 FIGURE 9 CAPACITANCES 30 500 = 20 5 = 5 300 _ & Ue x i E 200 2 z = 719 = 5 3 x= = @ 50 = & & 100 & 3.0 Fa 70 3 o 2.0 Ee 50 a1 0203 05 10 2030 50 10 20 30 50 10 REVERSE VOLTAGE (VOLTS) FIGURE 11 ON VOLTAGES "OC Ty 2 2506 a8 a VBE(sat) Ic/ig = 10 S o > $ 0.6 = @ Vee=10V & e 3 a 04 = S S > oS 02 VCE (sat) @ Ic/tg = 10 01 02 O05 1.0 5.0 100 200 500 1.0 Ic, COLLECTOR CURRENT (ma) MPS2222, A FIGURE 8 SOURCE RESISTANCE EFFECTS f= 1.0 kHz Ig = 60 nA 100 pA 500 nA LO mA 100 200 20k 50k Wk 20k 50 100k . Rg, SOURCE RESISTANCE (OHMS) , FIGURE 10 ~ CURRENT-GAIN BANDWIDTH PRODUCT VcE>20V Ty = 259 20 3.0 5.0 7.0 10 200 (30 50 70 100 Ic, EOLLECTOR CURRENT (mA) FIGURE 12 TEMPERATURE COEFFICIENTS -2.0 Raye for Vee ol G2 O05 1.0 20 5.0 10 20 50 100 200 00 Ic, COLLECTOR CURRENT (mA) Motorola Small-Signal Transistors, FETs and Diodes Device Data 2-283MAXIMUM RATINGS MPS2369,A* CASE 29-04, STYLE 1 TO-92 (TO-226AA) Rating Symbol Value Unit ; ; ; Collector-Emitter Voltage VcEO 15 Vde 3 Collectoy Collector-Emitter Voltage Voces 40 Vde Collector-Base Voltage VcBo 40 Vde J 2 Emitter-Base Voltage VEBO 45 Vde Base Collector Current Continuous - Ie 200 mAdc 1 if _ cern itt Total Device Dissipation @ Ta = 25C Pp 625 mw 2 3 wu Derate above 25C . 5.0 mWPC Operating and Storage Junction TJ, Tstg | ~55 to +150 C Temperature Range SWITCHING TRANSISTORS NPN SILICON THERMAL CHARACTERISTICS Characteristic Symbol Max Unit *MPS2369A is a Motorola Thermal Resistance, Junction to Ambient Rasa 200 cA designated preferred device. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Coilector-Emitter Breakdown Voltage(1) V(BRICEO 15 _ _ Vde {lc = 10 mAdc, Ig = 0} MPS2369A Collector-Emitter Breakdown Voltage VIBR)CES 40 _ _- Vde (Ic = 10 pAdc, Vee = 0} MPS2369,A Collector-Base Breakdown Voltage VIBRICBO 40 _ _ Vde {I = 10 wAde, Ig = 0) MPS2369,A Emitter-Base Breakdown Voltage V(BRIEBO 45 _ _ Vde (lz = 10 pAde, I = 0) MPS2369,A Collector Cutoff Current lego pAdc (VcB = 20 Vdc, IE = 0) _- _ 0.4 (Veg = 20 Vde, ls = 0, Ta = 125C) MPS&2369,A _ _ 30 Collector Cutoff Current IcES _ _ 0.4 wAdC (VcE = 20 Vde, VBE = 0) MPS2369,A ON CHARACTERISTICS De Current Gain(t) hee _ (Il = 10 mAde, Voge = 1.0 Y) _ MPS2369A _ _ 120 (I = 10 mAdc, VCE = 1.0 Vde, Ta = 55C) MPS2369 20 - _ (Ic = 10 mAdc, VcE = 1.0 Vde} MPS2369 40 _ 120 (Il = 10 mAdc, VcE = 0.35 Vde} MPS2369A 40 _ _ (le = 10 mAde, Vcg = 0.35 Vde, Ta = 55C) MPS2369A 20 _ _ (I = 30 mAde, VoE = 0.4 Vde} MPS2369A 30 _ _ {Ic = 100 mAde, Voce = 2.0 Vde) MPS2369 20 _ (Il = 100 mAde, Vee = 1.0 Vdc) MPS2369A 20 _ Collector-Emitter Saturation Voitage(1) VCE(sat) Vde (lc = 10 mAdc, Ip = 1.0 mAdc) MPS2369 _ 6.25 (I = 10 mAde, Ig = 1.0 mAdc) MPS2369A _ _ 0.20 (I = 10 mAdc, Ip = 1.0 mAdc, Ta = +125C) MPS2369A _ _ 0.30 (I =-30 mAde, Ip = 3.0 mAdc) MPS2369A _ 0.25 {Ic = 100 mAde, Ig = 10 mAdc) MPS2369A _ _ 0.50 Base-Emitter Saturation Voltage(1) VBE(sat) Vde (I = 10 mAdc, ip = 1.0 mAdc) MPS2369 0.7 _ 0.85 (I = 10 mAdg, Ip = 1.0 mAdc, Ta = + 425C) MPS2369A 0.5 _ _ (I = 10 mAdg, Ip = 1.0 mAde, Ta = 55C} MPS2369A _ _ 1,02 (I = 30 mAde, Ig = 3.0 mAdc) MPS2369A _ _ 1.15 (Ico = 4100 mAdc, Ip = 10 mAdc} MPS2369A _ - 1.60 (1) Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. 2-284 Motorola Smail-Signal Transistors, FETs and Diodes Device DataELECTRICAL CHARACTERISTICS (Continued) (Ta = 25C unless otherwise noted.) MPS2369,A | Characteristic Symbol Min Typ Max | unit | SMALL-SIGNAL CHARACTERISTICS Output Capacitance Cobo _ _ 4.0 pF (Vcp = 5.0 Vde, lp = 0, f = 1,0 MHz) MPS2369,A Small Signal Current Gain hfe 5.0 _ _ _ {lg = 10 mAdc, Vcg = 10 Vde, f = 100 MHz) MPS2369,A SWITCHING CHARACTERISTICS Storage Time ts _ 5.0 13 ns (lpi = Ig2 = Ic = 10 mAde) (Figure 3) MPS$2369,A Turn-On Time ton _ 8.0 12 ns (Voc = 3.0 Vde, Ic = 10 mAde, Ipq = 3.0 mAdc) (Figure 1} MPS2369,A Turn-Off Time toff _ 10 18 ns (Vcc = 3.0 Vde, I = 10 mAdc, Ig1 = 3.0 mAdc, Ip2 = 1.5 mAdc) (Figure 2) - MPS2369,4 FIGURE 1 ton CIRCUIT | ty ACK eoev ttt 30V QOL Lf -15V ~| < 10 ns -4 Cg* < 4.0 pF PULSE WIDTH (t;) = 300 ns DUTY CYCLE = 2.0% FIGURE 2 tors CIRCUIT e| ty ee 3.0V + 10,75 V 0 a 415V LL < 1.0 ns 4 Cs* < 4.0 pF PULSE WIDTH (ty) = 300 ns DUTY CYCLE = 2.0% FIGURE 3 STORAGE TEST CIRCUIT 10V PULSE WIDTH (ty) = 300 ns DUTY CYCLE = 2.0% *TOTAL SHUNT CAPACITANCE OF TEST JIG AND CONNECTORS, -L. eTs ~- Cg* < 3.0 pF Motorola Small-Signai Transistors, FETs and Diodes Device Data 2-285