2N7002
Description
The MTN7002N3 is a N-channel
enhancement-mode MOS transistor.
N-CHANNEL TRANSISTOR
www.comchiptech.com
COMCHIP
SOT-23
Dimensions in inches (millimeters)
.037(0.95).037(0.95)
.006(0.15)max.
.1
19
(3.
0
)
.020 (0.5).020 (0.5)
Top View
.103(2.6)
.006(0.15)
.044(1.10)
.110 (2.8)
.047 (1.20
)
.002(0.05)
.086 (2.2)
.035(0.90)
.020 (0.5)
.056 (1.40)
3
12
GΚGate
SΚSourse
DΚDrain
Equivalent Circuit
Drain-Sourse Voltage BV
DSS
60 V
Drain-Gate Voltage (RGS=1M:)BV
DSS
60 V
Gate-Source Voltage V
GS
+/-40 V
Continuous Drain Current (Ta=25qC) ID 200 *1 mA
Continuous Drain Current (Ta=100qC) ID 115 *1 mA
Pulsed Drain Current (Ta=25qC) ID 800 *2 mA
Total Power Dissipation (Ta=25qC) Pd 200 mW
DERATE Above 25qC 0.16
mW/qC
Operating Junction Temperature Tj -55~+150 qC
Storage Temperature Tstg -55~+150 qC
Thermal Resistance, Junction-to-Ambient 625 qC/W
Lead Temperature, for 10 second Soldering 260 qC
Drain-Sourse Voltage BV
DSS
60 V
Parameter Symbol
Limits
Unit
Absolute Maximum Ratings
(Ta=25qC)
MDS0303007A Page 1
MDS0303007A Page 2
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COMCHIP
Characteristics (Ta=25qC)
Symbol Min. Typ. Max. Unit Test Conditions
BVDSS 60 - - V VGS=0, ID=10uA
VGS(th) 1 - 2.5 V VDS=2.5V, ID=0.25mA
IGSS/F - - 100 nA VGS=+20V, VDS=0
IGSS/R - - 100 nA VGS=-20V, VDS=0
IDSS - - 1 uA VDS=60V, VGS=0
ID(ON) 500 - - mA VDS>2VDS(ON), VGS=10V
- - 0.375 V ID=50mA, VGS=5V
VDS(ON) - - 3.75 V ID=500mA, VGS=10V
- - 7.5 ID=50mA, VGS=5V
RDS(ON) - - 7.5
:ID=500mA, VGS=10V
GFS 80 - - mS VDS>2VDS(ON), ID=200mA
Ciss - - 50
Coss - - 25
Crss - - 5
pF VDS=25V, VGS=0, f=1MHz
*Pulse Test : Pulse Width d380us, Duty Cycled2%
Characteristic Curves
TYPICAL OUTPUT CHARACTERISICS
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
012345678910
DRAIN-SOURCE ---VDS(V)
DRAIN CURRENT---ID(A)
VGS=4V
VGS=8V
VGS=5V
TYTICAL TRANSFER CHARACTERISTIC
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
012345678910
GATE-SOURCE VOLTAGE---VGS(V)
DRAIN CURRENT---ID(A)
N-CHANNEL TRANSISTOR
www.comchiptech.com
COMCHIP
MDS0303007A Page 3
STATIC DRAIN-SOURCE ON-STATE RESISTANCE vs DRAIN
CURRENT
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
DRAIN CURRENT---ID(A)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE---
RDS(on)(ohm)
VGS=5
V
VGS=10
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
VS GATE-SOURCE VOLTSAGE
0
1
2
3
4
5
6
7
8
9
10
0 2 4 6 8 101214161820
GATE-SOURCE VOLTAGE---VGS(V)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE--
-
RDS(on)(ohm)
FORWARD TRANSFER ADMITTANCE
vs DRAIN CURRENT
1
10
100
1000
0.001 0.01 0.1 1
DR AIN CURR ENT---ID(A)
FORWARD TRANSFER
ADMITTANCE---GFS(ms)
VGS=10V
REVERSE DRAIN CURRENT vs SOURCE-DRAIN VOLTAGE
0.01
0.10
1.00
0.00 0.50 1.00 1.50
SOURCE-DRAIN VOLTAGE---VSD(V)
REVERSE DRAIN CURRENT---IDR(A
)
Pulsed
VGS=0
V
VGS=10V
N-CHANNEL TRANSISTOR
SWITCHING CHARACTERISTICS
1
10
100
1000
0.001 0.01 0.1 1
DRAIN CURRENT---ID(A)
SWITCHING TIMES---(ns)
Tf
Td(off)
Td(on)
Tr
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