G & SOLID STATE 3875081 G E SOLID STATE Silicon Controlled Rectifiers o1 Deffse7sos, oo17nss 2 ff O1E 17688 3p OT} 2 IT 2N3870-2N3873, 2N3896-2N3899, S6420 Series 35-A Silicon Controlled Rectifiers Features: High di/at and dv/dt capabilities Low on-state voltage at high current levels = Low thermal resistance File Number 578 TERMINAL DESIGNATIONS CATHODE e2ts-27775 Voltage 100 V 200 V 400V 600 V . Package Types Types Types Types 2N3870-79 Press-Fit 2N3870 2N3871 2N3872 2N3873 Stud 2N3896 2N3897 2N3898 2N3899 \solated-Stud S6420A $6420B $6420D S6420M 92CS-2773101 These RCA types are all-diffused, silicon controlled rectifi- 2N3666-60 ers (reverse-blocking triode thyristors) designed for power switching, power control, and voltage regulator applica- tlons and for heating, lighting, and motor speed-control circuits. $2CS-277349RI $6420 Series MAXIMUM RATINGS, Absolute-Maximum Values: 2N3870 2N3871 2N3872 2N3873 2N3896 2N3897 2N3898 22N3899 $6420A $6420B $6420D $6420M *NON-REPETITIVE PEAK REVERSE VOLTAGE} Gate OPEN... .... ec cece cence een eeeasceeeeees Vasom 150 330 660 700 Vv *REPETITIVE PEAK REVERSE VOLTAGE Gate Open... ....c cece ceca ner cere en ee cennetes Vrrom 100 200 400 600 v *REPETITIVE PEAK OFF-STATE VOLTAGE} Gate Open... - 22. ce cece cence cen eeen een eeertas Vorom 100 200 400 600 Vv ON-STATE CURRENT: Tc = 65C, conduction angle = 180: RMS oo... cece ence cece eect een e ea tatiecereees trams: 35 A FAVELAGO oo... cece cece eee eee cece tn eet er eetees lraw 22 A PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT: Ite For one full cycle of applied principal voltage *60 Hz (sinusoidal) 350 A 50 Hz (sinusoidal) 300 A RATE OF CHANGE OF ON-STATE CURRENT Vo=Vorom, Ig1=200 MA, tr = 0.5 US co ceseeeeceenee di/dt 200 A/us FUSING CURRENT (for SCR protection): Ty =-40 to 100C, t= 1to B.3MS ...... cece eeeee vt 300 As GATE POWER DISSIPATION: Peak Forward (for 10 ys max., See Fig. 7) ......--- Pasa 40 Ww Peak REVerse ...cc cece cece seer een eceevoeeesenes Prom See Fig. 8 Average (averaging time = 10 ms max.).......... Peuw 0.5 Ww TEMPERATURE RANGE#: Storage ......... -40to 125 Operating (Case) . -40to100__ TERMINAL TEMPERATURE (During soldering): Tr For 10s max. (terminals and CaS) .....0.ssseeeeseeee 225 C *In accordance with JEDEC registration data filed for the JEDEC (2N-series) types, }These values do not apply if there is a positive gate signal. Gate must be open or negatively biased. Tc = 60 for isolated-stud package types. * Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted. # Temperature measurement point is shown on the DIMENSIONAL OUTLINE.G E SOLID STATE ae este 3875081 GE SOLID STATE oie 17689 Dl 2S-/7 : _ Silicon Controlled Rectifiers 2N3870-2N3873, 2N3896-2N3899, S6420 Series ELECTRICAL CHARACTERISTICS At Maximum Ratings Unless Otherwise Specified and at Indicated Case Temperature (Te) LIMITS FOR ALL TYPES CH ARACTERISTIC SYMBOL Unless Otherwise Specified UNITS MIN. TYP, MAX. Peak Off-State Current: (Gate open, Tg = 100C) Forward Current (!poy) at Vp = VDROM Ipom Reverse Current (Irom) at VR = VRROM or 2N3870, 2N3896, S6420A ..-------- es - 0.2 2* 2N3871, 2N3897, S6420B .......-+265 lRomM - 0.25 2.5* mA 2N3872, 2N3898, S6420D ... 1. ee eee ee - 0.3 3* 2N3873, 2N3899, S6420M, Instantaneous On-State Voltage: it = 69 A (peak), To = 25C wwe eee eee VT - - 1.85" Vv it = 100 A (peak), Te = QC wee ee eee - 1.7 2.1 DC Gate Trigger Voltage: Vp = 12 V {dc}, RL = 30 &, To =-40C VoeT - 15 3 Vv Vp = 12 V (dc), Ry = 30 2,7 = 28C - 1.1 2 For other case temperatures .. 2-2-0 ss wae See Fig. 10 DC Gate Trigger Current: . Vp = 12 V (de), R_ = 30.0, Te =-40C - 46 80* Vp = 12 V (de), RL =302, Te = 25C leT 1 25 40 mA For other case temperatures 2... eee ee ee ee See Fig. 9 Instantaneous Holding Current: Gate open, TQ=25C 2... eee eee seen neee ino 0.5 30 70 mA For other case temperatures 2.2... ee ee eee See. Fig. 6 Gate Controlled Turn-On Time: (Delay Time + Rise Time) For Vp = VoroM: !g= 200 mA, ty = 0.1 ps, tot Us I7 =30 A (peak), To = 25C (See Fig. 11 & 13) - 1.25 2 Circuit Commutated Turn-Off Time: Vp = Vprom: it = 18 A, pulse duration = 50 ps, dv/dt = 20 V/us, -di/dt tg ys =-30 A/us, Ig = 200 mA, Tg = goc (See Fig. 14) 2... eee ee eee seeee - 20 40 Critical Rate of Rise of Off-State Voltage: Vp= VoromM: exponential voltage rise, dv/dt V/s Gate open, Tg = 100C (See Fig. 15) . 10 100 - Thermal Resistance, Junction-to-Case: Steady-State Press-fit & stud types... 2 eee eee eee Resc - - 0.9* C Isolated-stud types... 2 eee eee eee - - 1 *In accordance with JEDEC registration data filed for the JEDEC (2N-serias) types. 695 1232 0-09 O1 def ze7s0a2 coiznaa 4 nme ret G E SOLID OLID STATE 0} deff sa7soa1 oo17es0 o 081 GE SOLID STATE - -. _ 387505 Controlled Rectifiers 8 1 E i 7590 D T- 2s" 17 2N3870-2N3873, 2N3896-2N3899, S6420 Series CURRENT WAVEFORM: SINUSOIDAL LOAD: RESISTIVE OR INDUCTIVE CURRENT WAVEFORM: SIHUSOIDAL LOAD: RESISTIVE OR IRDUCTIVE L\ 0 LEO * AVERAGE POWER DISSIPATION (Pp}WATTS 9 FE w & 2 < = w a = wu + a 4 6 wy a s x a 4 a 4 z 3 z x < =z = Q z 3 @ a 8 3 z > Zz a 2 5 3 2 AVERAGE ON-STATE CURRENT [Eyay) ] A AVERAGE OR RMS ON-STATE CURRENT [Zy(av) OR ItRms)] A soeuKIAZ 92m-20082 Fig. 1 Power dissipation vs. on-state current. Fig. 2 Maximum allowable case temperature vs. on-state current for press-fit and stud types. LOAD} RESISTIVE RMS ON-STATE CURRENT [It Aus)]* 35 4 AT SPECIFIED CASE TEMPERATURE ae GATE CONTROL MAY GE LOST >| OURING AND (MMEDIATELY FL FOLLOWING SURGE CURRENT Z ann oh INTERVAL. ha ar Ng OVERLOAD MAY NOT BE go REPEATED UNTIL JUNCTION te > NX TEMPERATURE HAS RETURNED SE sco NSS TO STEADY-STATE ze _ RATED VALUE we SO Hz N oe aw gu ry ag 0) x? ws a i 0 nv? w SURGE CURRENT DURATION ~ FULL CYCLES . nee chee Fig. 3 Peak surge on-state current vs. surge current duration. 696G E SOLID STATE ern meememncan maRt 3875081 GE SOLID STATE 01 pe 3a7soas oozes 2 O1e 17691 vo T2S-/7 Silicon Controfled Rectifiers MAXIMUM ALLOWABLE 2N3870-2N3873, 2N3896-2N3899, S6420 Series CURRENT WAVEFORM- SIHUSOIDAL LOAD RESISTIVE OR INDUCTIVE AVERAGE OR RMS ON-STATE CURRENT [I7(av) OR Tr(RMs)] A ROEINIRG, Fig. 4 Maximum allowable case temperature FEMPERATURE 2sec INSTANTANEOUS ON-STATE VOLTAGE (7} 9208-19869 9285-46Rt Fig. 5 Instantaneous on-state current vs. on- State voltage. vs. on-state current for Isolated-stud types. (INITIAL ON-STATE CURRENT #150 mA 4 i 2 = s b 2 a = i 3 8 2 = a a 3 = -4 -0 -2 0 a 0 CASE TEMPERATURE (Te) - 8C Fig. 6 DC holding current vs. case temperature. "1234 B-11 6970 etme UH ae G E SOLID STATE 3875081 GE SOLID STATE Silicon Controlled Rectifiers 01 pe ff3a7sos, conse y OTE 17692 bp T28-/7 2N3870-2N3873, 2N3896-2N3899, S6420 Series LOAD +30 8 60 CASE TEMPERATURE (To1*C Fig. 7 DC gate trigger current (forward) vs. case temperature. CASE TEMPERATURE (To )-*C 928-19871 Fig. 8 DC gate trigger voltage (forward) vs. case temperature. o-~ be frp me | Poh 9208-17063 Fig. 10 Rate of change of on-state current with time (defining di/dt). 698 Fig. 11 Relationship between off-state voltage, 92cS-19870 e x L 2 w z - 9 oz O4 OB i OG GATE TRIGGER CURRENT \IgyIA 7 9208-19872 Fig. 9 Gate-controlled turn-on time vs. gate trigger current. torte tt, @2CS-193E6R2 on-state current, and gate trigger voltage showing reference points for definition of turn-on time (t,x).sr ee remeerpneeneanerenitenitit G E SOLID STATE | 3875081 G E SOLID STATE ou eff ss7sosi oow7ea3 b O1E 17693 D.F=2S5-)7 Silicon Controlled Rectifiers 50% 2N3870-2N3873, 2N3896-2N3899, S6420 Series CRITICAL dv/dt a di/dr 4 " 'b Ra ~ TY IR $ x | 1 foseenn t _ i ! < a a a = S = < esh-asal Fig. 12 Relationship between instantaneous on-state current and voltage showing reference points for definition of circuit commutated turn-off time (ta). HW co.g3 2h at 20.63 ? 1 AC 92CS-13365R3, Fig. 13 Rate of rise of off-state voltage with time (defining-critical dv/dt). 689 " 1236 p-13.