SOT-23 Plastic-Encapsulate Transistors >>. by 1 GATE 2N7002LT1 MOSFET(N-CHANNEL) 2.SOURCE 3 3.DRAIN Y Power dissipation Po: 0.35 W (Tamb=25 ) Drain current lo: 250m A Drain-source voltage Vps:60V Operating and storage junction temperature range Ts, Tstg :-55C to+150C UNIT: mm ELECTRICAL CHARACTERISTICS (Tamp=25'C_ unless otherwise specified) Parameter Symbol Testconditions =| MIN. | TYP.| MAX.| UNIT Drain-source Breakdown Voltage V(BR)DSS Vos=0VA,IpD=10nA 60 | 70 Vv Gate -Threshold Voltage V(BR}GS Vos=VGS,lp=250n A 1 1.5 | 2.5 Gate -body Leakage Icss Vops=0V,Ves=15V 10 nA . . loss Vos=60V,VGs=0V 4 aA Zerp Gate Vp;tage Draom Cirremt Vos=60V,Ves=0V,T=125 500 : Voes=10V,Vos=7.5V 800 | 1300 On-state Drain Current ID(ON) Vos=4.5V.Vos=10V 500 | 700 mA VG6s=10V,ID=250mA 1.5 3 . ~ . . . r 1 Drain-Siurce On-Resistance DS(ON) Vos=4.5V Ip=250mA 70 4 2 Qts Vos=15V,Ip=200mMA 300 ms Forward Tranceconductance VSp is=200MA,VcGs=0V 0.851102 Vv Diode Forward Voltage Qe 0.6 1.0 Vos=30V,Ves=10V Qes Total Gate Change ip=280mA 0.06 nc Gate -Drain Charge Qgd 0,006 Input Capacitance Ciss 25 Vos=25V, Ves=0V Output capacitance Coss 6 pF f=1MHz Reverse Transfer Capacitance Crss 1.2 SWITCHING 7. 20 Turn-on Time wen) Vpb=30V,RL=200 5 2 ns Ip=100mA,IGEN=10V 75 30 Turn-off Time wer) -RG=10 3 ns r 212