1997. 8. 13 1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP32C
TRIPLE DIFFUSED PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
FEATURES
แดComplementary to TIP31C.
MAXIMUM RATING (Ta=25แดฑ)
DIM MILLIMETERS
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-220AB
10.30 MAX
15.30 MAX
0.80
ฮฆ3.60 0.20
3.00
6.70 MAX
13.60 0.50
5.60 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
A
E
MM
123
F
B
G
H
L
C
K
J
O
N
P
D
1.37 MAX
1.50 MAX
R
S
Q
C
T
Q1.50
R 9.50 0.20
S 8.00 0.20
T 2.90 MAX
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25แดฑ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Emitter Sustaining Voltage VCEO(SUS) IC=-30mA, IB=0 -100 - - V
Collector Cut-off Current ICEO VCE=-60V, IB=0 - - -0.3 mA
Collector Cut-off Current ICES VCE=-100V, VEB=0 - - -200 แปA
Emitter Cut-off Current IEBO VBE=-5V, IC=0 - - -1 mA
DC Current Gain hFE
VCE=-4V, IC=-1A 25 - -
VCE=-4V, IC=-3A 10 - 50
Collector-Emitter Saturation Voltage VCE(sat) IC=-3A, IB=-375mA - - -1.2 V
Base-Emitter On Voltage VBE(on) VCE=-4V, IC=-3A - - -1.8 V
Transition Frequency fTVCE=-10V, IC=-500mA f=1MHz 3.0 - - MHz
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -100 V
Collector-Emitter Voltage VCEO -100 V
Emitter-Base Voltage VEBO -5 V
Collector Current
DC IC-3
A
Pulse ICP -5
Base Current IB-1 A
Collector Power
Dissipation
Ta=25แดฑPC
2 W
Tc=25แดฑ40 W
Junction Temperature Tj150 แดฑ
Storage Temperature Range Tstg -55แด150 แดฑ