BC369
PNP General Purpose Amplifier
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T A = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collecto r-Emitter Voltage 20 V
VCES Collector-Base Voltage 25 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Curre nt - Continuous 1.5 A
TJ, Tstg Operating a nd Storage Junction Temperature Ra nge -55 to +150 °C
Symbol Characteristic Max Units
BC369
PDTotal Device Dissipation
Derate above 25°C625
5.0 mW
mW/°C
RθJC Thermal Resista n ce, Junctio n to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambien t 200 °C/W
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.2 A.
Sourced from Process 77.
BCETO-92
1997 Fairchild Semiconductor Corporation
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
BC369
3
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
ON CHARACTERISTICS
hFE DC Current Gain IC = 5.0 mA, VCE = 10 V
IC = 0.5 A, VCE = 1.0 V
IC = 1.0 A, VCE = 1.0 V
50
85
60 375
VCE(sat)Collector-Emitter Satura tion Voltage IC = 1.0 A, IB = 100 mA 0.5 V
VBE(on)Base-Emitter On Volta ge IC = 1.0 A, VCE = 1.0 V 1.0 V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V,
f = 35 MHz 45 MHz
V(BR)CEO Col lector-Emitter Breakdown Voltage IC = 10 mA, IB = 020V
V(BR)CES Collector-Base Breakdown Voltage IC = 100
µ
A, IE = 0 25 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10
µ
A, IC = 0 5.0 V
ICBO Collector-Cutoff Current VCB = 25 V, IE = 0
VCB = 25 V, IE = 0, TA = 150°C10
1.0
µ
A
mA
IEBO Emi t t er-Cutoff Current VEB = 5.0 V, IC = 0 10
µ
A
PNP General Purpose Amplifier
(continued)
Typical Characteristics
BC369
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Co l lecto r-Emitter Saturati on
Voltage vs C ollec tor Cu rrent
0.01 0.1 1 3
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (A )
V - COL LECT OR-EMIT TER VO LT AG E ( V)
CESAT
- 40 °C
25 °C
C
β= 10
125 °C
Typ i cal Pu lsed C ur r ent Gai n
vs Col lector Current
0.01 0.1 1 2
0
50
100
150
200
250
300
I - COLLE CTOR CURRE NT ( A)
h - TYPIC AL PU LSED C URRENT GAIN
FE
- 40 °C
25 °C
C
V = 5.0V
CE
125 °C
Power Dissipation vs
A mb ient Temp erature
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
TE MP ERAT URE ( C)
P - P OWE R DIS SIPATI ON ( mW)
D
o
TO-92
Typical Characteristics (continued)
Collector-Base Capacitance
vs Colle ctor-Base V oltage
0102030
0
10
20
30
40
V - COLL ECTO R-BASE VOLTA GE ( V )
C - COLLECTOR-BASE CAPACITANCE (pF)
OBO
CB
f = 1.0 MHz
Gain Bandwidth Product
vs Col lect o r Curre n t
1 10 100 1000
0
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
f - GAIN B A ND WIDT H PRO DU CT (M Hz)
T
C
V = 10V
CE
Base-Emitter ON V oltage vs
Collector Current
1 10 100 1000
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - B ASE-EMITTER ON VOLTA GE (V)
BE(ON)
C
V = 5 .0 V
CE
- 40 °C
25 °C
125 °C
Base-Emi tter Satu ration
Voltage vs Collector Current
1 10 100 1000
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA )
V - BASE-EM I TTER VOLTAGE (V)
BESAT
C
β= 10
- 40 °C
25 °C
125 °C
Collector-Cuto ff Current
vs Ambien t Temperature
25 50 75 100 125 150
0.1
1
10
100
T - AM BIE NT TE MP E RATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 20 V
CB
°
CBO
PNP General Purpose Amplifier
(continued)
BC369
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