1-1
Product Description
Ordering In formation
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS SiGe HBT Si CMOS
InGaP/HBT GaN HEMT SiGe Bi-CMOS
RF IN
GND1
BIAS
RF OUT
GND2
GAIN SELECT
Logic
Control
1
2
3
6
5
4
RF2370
3V LOW NOISE AMPLIFIER
• WLAN LNA with Bypass Feature
• CDMA PCS LNA with Bypass Feature
• MMDS LNA with Bypass Feature
• General Purpose Amplifica tion
• Commercial and Consu mer Systems
The RF2370 is a switchable low noise amplifier with a
ver y high dynamic range designed for digital cellular and
WLAN applications. The device functions as an outstand-
ing front end low noise am plifier. The bias current may be
set externally. The IC is featured in a standard SOT
6-lead plastic package.
• Low Noise and High Intercept Point
• Adjustable Bias Current
• Power Down Control
• Low Insertion Loss Bypass Feature
• 1.8V to 5V Operation (See Note: Page 2)
• 1.5GHz to 3.8GHz Operation
RF2370 3V Low Noise Amplifier
RF2370PCBA-410Fully Assembled Evaluation Board (WLAN) usable
from 1.9GHz to 4GHz with standard tune
4
Rev A4 050727
0.10
MAX.
0.90
0.70
1.30
1.00
1.90 3.10
2.70
0.50
0.35
3.00
2.60
1.80
1.40
9°
1° 0.25
0.10
0.37 MIN.
Shaded lead is pin 1. Dimensions in mm.
TEXT*
*When Pin 1 is in upper left,
text reads downward
(as shown).
Package Style: SOT 6-Lead
9
RoHS Compliant & Pb-Free Product
1-2
RF2370
Rev A4 050727
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage -0.5 to +6.0 VDC
Input RF Level +5 (see note) dBm
Current Drain, ICC 32 mA
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C
NO TE: Exceeding any one or a combination of the above maximum rating
limits may cause permanent damage. Input RF transients to +15dBm will
not harm the device. For sustained op eration at inputs >+5dBm, a small
dropping resistor is recommended in series with the VCC in order to limit
the current due to self-biasing to <32mA.
Parameter Specification Unit Condition
Min. Typ. Max.
Operating Range TAMB=+25°C, VCC=3.0V
Frequency Range 900 4000 MHz
WLAN Low Noise
Amplifier
Frequency 2450 MHz
HIGH GAIN MODE Gain Select<0.8V, VBIAS=3V, T=+25°C
Gain 12.0 14.0 dB
Noise Figure 1.3 1.5 dB
Input IP3 +7.0 dBm IIP3 will improve if ICC is raised above 7mA.
Output VSWR 1.7:1 2:1
Current Drain 7 mA
BYPASS MODE Gain Select>1.8V, VBIAS=0V
Gain -4.0 -3.0 -2.0 dB Note: Bypass mode insertion loss will
degrade gradually as VCC goes below 2.7V.
Input IP3 +16.0 +20.0 dBm
Output VSWR 1.6:1
Current Drain 2.0 3.0 mA
Power Supply
Voltage (VCC)3V
VSELECT Low 0.8 V High Gain mode.
Select<0.8V, VBIAS=3V
VSELECT High 1.8 V Low Gain mode.
Select>1.8V, VBIAS=0V
Power Down 0 10 μA Gain Select<0.8V, VBIAS=0V, VCC=0V
Bias note: Due to the presence of ESD protection circuitry on the RF2370, the maxim um all o w able collector bias voltage (pin 4) is 4.0V.
Higher supply voltages such as 5V are permissible if a series resistor is used to drop VCC to <4.0V for a given ICC.
Caution! ESD sensitive device.
RF Micro De vices be lie ves the furnished inf ormation is cor rect and accu rate
at the time of this printin g. RoHS marking based on EUDirectiv e2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume respo nsibility for the use of the described produc t(s).
1-3
RF2370
Rev A4 050727
Pin Function Description Interface Schematic
1BIAS
For low noise amplifier applications, this pin is used to control the bias
current. An external resistor can be used to set the bias current for any
VBIAS voltage.
2GND1
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
3RF IN
RF input pin. This part is designed such that 50Ω is the optimal source
impedance for best noise figure. Best noise figure is achieved with only
a series capacitor on the input.
4RF OUT
Amplifier output pin. This pin is an open-collector output. It must be
biased to VCC through a choke or matching inductor. This pin is
matched to 50Ω with a shunt L, series L topology enhances to stability
of the device by reducing the high frequency gain above 6GHz.
5GND2
See GND1.
6 GAIN
SELECT This pin selects high gain and bypass modes.
Gain Select<0.8V, high gain.
Gain Select>1.8V, low gain.
A series resistor of 100Ω is required on this pin to enhance stability.
VBIAS
RF IN RF OUT
To Bias
Circuit
1-4
RF2370
Rev A4 050727
Evaluation Board Schematic
C1
DNI
C2
100 pF
R1
1.8 kΩ
VREF
L1
3.3 nH
C4
DNI
C5
100 pF
C7
2.0 pF
C3
DNI
Select
Logic
Control
2
3 4
1 6
5
J1
RF IN
L2
1.2 nH
C6
10 nF
R3
0 ΩVCC
J2
RF OUT
R2
100 Ω
1
2
3
4
P1
P1-4 VCC
P1-3 SELECT
GND
P1-1 VREF
HDR_1X4
1-5
RF2370
Rev A4 050727
Evaluation Board Layout
Board Size 0.835” x 0.900”
Board Thickness 0.032”, Board Material FR-4
1-6
RF2370
Rev A4 050727
