April 2008
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C www.fairchildsemi.com
1
FDS5351 N-Channel PowerTrench® MOSFET
FDS5351
N-Channel PowerTrench® MOSFET
60V, 6.1A, 35mΩ
Features
Max rDS(on) = 35mΩ at VGS = 10V, ID = 6.1A
Max rDS(on) = 42mΩ at VGS = 4.5V, ID = 5.5A
High performance trench technology for extremely low rDS(on)
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
Inverter Switch
Synchronous Rectifier
Load Switch
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 60 V
VGS Gate to Source Voltage ±20 V
IDDrain Current -Continuous 6.1 A
-Pulsed 30
EAS Single Pulse Avalanche Energy (Note 3) 73 mJ
PDPower Dissipation T A = 25°C (Note 1a) 5 W
Power Dissipation T A = 25°C (Note 1b) 2.5
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case (Note 1) 25 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDS5351 FDS5351 SO-8 13’’ 12mm 2500units
SO-8
D
D
D
D
S
SS
G
Pin 1
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
http://store.iiic.cc/
FDS5351 N-Channel PowerTrench® MOSFET
www.fairchildsemi.com
2
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250µA, referenced to 25°C 55 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 48V, VGS = 0V 1µA
IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1.0 2.0 3.0 V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 250µA, referenced to 25°C -6.2 mV/°C
rDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 6.1A 26.5 35.0 mΩVGS = 4.5V, ID = 5.5A 32.4 42.0
VGS = 10V, ID = 6.1A, TJ= 125°C 44.5 58.8
gFS Forward Transconductance VDD = 5V, ID = 6.1A 24 S
Dynamic Characteristics
Ciss Input Capacitance VDS = 30V, VGS = 0V,
f = 1MHz
985 1310 pF
Coss Output Capacitance 90 120 pF
Crss Reverse Transfer Capacitance 50 75 pF
RgGate Resistance f = 1MHz 1.7 Ω
Switching Characteristics
td(on) Turn-On Delay Time VDD = 30V, ID = 6.1A,
VGS = 10V, RGEN = 6Ω
8 16 ns
trRise Time 3 10 ns
td(off) Turn-Off Delay Time 21 34 ns
tfFall Time 2 10 ns
QgTotal Gate Charge VGS = 0V to 10V VDD = 30V,
ID = 6.1A
19 27 nC
QgTotal Gate Charge VGS = 0V to 4.5V 913 nC
Qgs Gate to Source Charge 3 nC
Qgd Gate to Drain “Miller” Charge 3.5 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 6.1A (Note 2) 0.82 1.3 V
VGS = 0V, IS = 2.1A (Note 2) 0.76 1.2
trr Reverse Recovery Time IF = 6.1A, di/dt = 100A/µs 24 38 ns
Qrr Reverse Recovery Charge 15 27 nC
NOTES:
1. RθJA is determined with th e de vice moun ted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design whil e RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. UIL condition: Starting TJ = 25°C, L = 3mH, IAS = 7A, VDD = 60V, VGS = 10V.
a) 50 °C/W when moun ted on a
1in2 pad of 2 oz copper. b) 125°C/W when mounted on a
minimum pad.
http://store.iiic.cc/
FDS5351 N-Channel PowerTrench® MOSFET
www.fairchildsemi.com
3
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1.
0123
0
10
20
30
VGS = 3.5V
VGS = 4.5V
PULSE DUR ATION = 80µs
DUTY CYCLE = 0.5%M A X
VGS = 10V
VGS = 3V
VGS = 4V
ID, DRAIN CURRENT ( A )
VDS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
0102030
0.5
1.0
1.5
2.0
2.5
3.0
VGS = 3.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT(A)
VGS = 4.5V
VGS = 4V
VGS = 3V
VGS = 10V
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On- Resistance
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID = 6.1A
VGS = 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEM PERATUR E (oC)
vs Junction Te mperature Figure 4.
246810
0
20
40
60
80
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%M AX
TJ = 125oC
TJ = 25oC
ID = 6.1A
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
VGS, GA TE TO SO U RCE VOLTA G E (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
12345
0
10
20
30
VDS = 5V
PULSE DURA TION = 80µs
DUTY CYCLE = 0.5%M A X
TJ = -55oC
TJ = 25oC
TJ = 125oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SOU RCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
TJ = -55oC
TJ = 25oC
TJ = 125oC
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs Source Current
http://store.iiic.cc/
FDS5351 N-Channel PowerTrench® MOSFET
www.fairchildsemi.com
4
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C
Figure 7.
048121620
0
2
4
6
8
10
ID = 6.1A
VDD = 30V
VDD = 20V
VGS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE(nC)
VDD = 40V
Gate Charge Characteristics Figure 8.
0.1 1 10 100
10
100
1000
f = 1MH z
VGS = 0V
CAPACITA NCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
4000
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01 0.1 1 10
2
4
6
8
1
TJ = 25oC
TJ = 125oC
tAV, TIME IN AVA L ANC HE(m s )
IAS, AVALANCHE CURRENT(A)
30
Uncl a mped I nduc t ive
Switching Capability Figure 10.
25 50 75 100 125 150
0
2
4
6
8
10
RθJA = 50oC/W
VGS = 10V
VGS = 4.5V
ID, DRAIN CURRENT (A)
TA, AMBIENT TEMPERATURE (oC)
Maximum Continuous Drain
Current vs Ambient Temperature
Figure 11. Forward Bias Safe
Operating Area
0.01 0.1 1 10 100
0.01
0.1
1
10
100
300
DC
10s
1s
100ms
10ms
1ms
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AR EA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX R A TED
RθJA = 125oC/W
TA = 25oC
Figure 12.
10-4 10-3 10-2 10-1 110
100 1000
1
10
100
1000
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.5
VGS = 10V
P(PK), PEAK TRANSIENT PO WER (W)
t, PULSE WIDTH (sec)
Single Pulse Maximum
Power Dissipation
Typical Characteristics TJ = 25°C unless otherwise noted
http://store.iiic.cc/
FDS5351 N-Channel PowerTrench® MOSFET
www.fairchildsemi.com
5
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C
Figure 13. Transient Thermal Response Cu rve
10-4 10-3 10-2 10-1 110
100 1000
0.001
0.01
0.1
1
2
SINGLE PULSE
RθJA = 125oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.0 5
0.0 2
0.0 1
PDM
t1t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Typical Characteristics TJ = 25°C unless otherwise noted
http://store.iiic.cc/
www.fairchildsemi.com
FDS5351 N-Channel PowerTrench® MOSFET
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C 6
Rev. I34
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fair child Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUI T DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY L ICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to per form when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP-SPM™
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world 1mW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
®
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
tm
®
tm
tm
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary First Production This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
http://store.iiic.cc/
