BSS126
SIPMOS® Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv/dt rated
• Available with VGS(th) indicator on reel
• Pb-free lead plating; RoHS compliant
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTA=25 °C 0.021 A
TA=70 °C 0.017
Pulsed drain current ID,pulse TA=25 °C 0.085
Reverse diode dv/dtdv/dt
ID=0.016 A,
VDS=20 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage VGS ±20 V
ESD sensitivity (HBM) as per
MIL-STD 883 Class 1
Power dissipation Ptot TA=25 °C 0.50 W
Operating and storage temperature Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
0) also available in non Pb-free on request
1) see table on next page and diagram 11
Value
VDS 600 V
RDS(on),max 700 Ω
IDSS,min 0.007 A
Product Summary
PG-SOT-23
Type Package Ordering Code Tape and Reel Information Marking
BSS126 0) PG-SOT-23 Q67042-S4300 E6327: 3000 pcs/reel SHs
BSS126 0) PG-SOT-23 Q67042-S4300 E6906: 3000 pcs/reel
sorted in VGS(th) bands1)
SHs
Rev. 1.3 page 1 2006-06-14
BSS126
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - ambient RthJA minimal footprint - - 250 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=-5 V, ID=250 µA 600 - - V
Gate threshold voltage VGS(th) VDS=3 V, ID=8 µA -2.7 -2.0 -1.6
Drain-source cutoff current ID(off)
VDS=600 V,
VGS=-5 V, Tj=25 °C - - 0.1 µA
VDS=600 V,
VGS=-5 V, Tj=125 °C --10
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 100 nA
On-state drain current IDSS VGS=0 V, VDS=25 V 7- -mA
Drain-source on-state resistance RDS(on) VGS=0 V, ID=3 mA - 320 700 Ω
VGS=10 V, ID=16 mA - 280 500
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=0.01 A 0.008 0.017 - S
Threshold voltage VGS(th) sorted in bands2)
J VGS(th) VDS=3 V, ID=8 µA -1.8 - -1.6 V
K -1.95 - -1.75
L -2.1 - -1.9
M -2.25 - -2.05
N -2.4 - -2.2
2)
Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
Values
Rev. 1.3 page 2 2006-06-14
BSS126
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
ID=f(VGS); VDS=3 V; Tj=25 °C Ciss -2128pF
Output capacitance Coss - 2.4 3.2
Reverse transfer capacitance Crss - 1.0 1.5
Turn-on delay time td(on) - 6.1 9.2 ns
Rise time tr- 9.7 14.5
Turn-off delay time td(off) -1421
Fall time tf- 115 170
Gate Charge Characteristics
Gate to source charge Qgs - 0.05 0.08 nC
Gate to drain charge Qgd - 1.2 1.8
Gate charge total Qg- 1.4 2.1
Gate plateau voltage Vplateau - 0.10 - V
Reverse Diode
Diode continous forward current IS- - 0.016 A
Diode pulse current IS,pulse - - 0.064
Diode forward voltage VSD
VGS=-5 V, IF=16 mA,
Tj=25 °C - 0.81 1.2 V
Reverse recovery time trr - 160 240 ns
Reverse recovery charge Qrr - 13.2 19.8 nC
VR=300 V, IF=0.01 A,
diF/dt=100 A/µs
TA=25 °C
Values
VGS=-5 V, VDS=25 V,
f=1 MHz
VDD=300 V,
VGS=-3…7 V,
ID=0.01 A, RG=6 Ω
VDD=400 V,
ID=10 mA,
VGS=-3 to 5 V
Rev. 1.3 page 3 2006-06-14
BSS126
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VGS); VDS=3 V; Tj=25 °C ZthJA=f(tp)
parameter: tpparameter: D=tp/T
10 µs
100 µs
1 ms
10 ms
DC
103
102
101
100
10-1
10-2
10-3
10-4
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
102
101
100
10-1
10-2
10-3
10-4
103
102
101
tp [s]
ZthJA [K/W]
0
0.1
0.2
0.3
0.4
0.5
0.6
0 40 80 120 160
TA [°C]
Ptot [W]
0
0.005
0.01
0.015
0.02
0.025
0 40 80 120 160
TA [°C]
ID [A]
Rev. 1.3 page 4 2006-06-14
BSS126
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); VDS=3 V; Tj=25 °C gfs=f(ID); Tj=25 °C
-0.2 V
-0.1 V
0 V 0.1 V 0.2 V 0.5 V
1 V
10 V
0
100
200
300
400
500
600
700
800
900
1000
0 0.01 0.02 0.03 0.04
ID [A]
RDS(on) [Ω]
0
0.005
0.01
0.015
0.02
0.025
-2 -1 0 1
VGS [V]
ID [A]
0
0.005
0.01
0.015
0.02
0.025
0.000 0.005 0.010 0.015 0.020
ID [A]
gfs [S]
V 0.2-
V 0.1-
V 0
V 0.1
V 0.2
V 0.5
V 1
V 10
0
0.01
0.02
0.03
0.04
0481216
VDS [V]
ID [A]
Rev. 1.3 page 5 2006-06-14
BSS126
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID= 0.016mA; VGS=0 V VGS(th)=f(Tj); VDS=3 V; ID = 8 µA
parameter: ID
11 Threshold voltage bands 12 Typ. capacitances
ID=f(VGS); VDS=3 V; Tj=25 °C C=f(VDS); VGS=-3 V; f=1 MHz
8 µA
JKLMN
0.001
0.01
0.1
-2.5 -2 -1.5 -1
VGS [V]
ID [mA]
typ
%98
0
200
400
600
800
1000
1200
1400
1600
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [Ω]
typ
%98
%2
-3.5
-3
-2.5
-2
-1.5
-1
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
0.1
1
10
100
0 5 10 15 20 25 30
VDS [V]
C [pF]
Rev. 1.3 page 6 2006-06-14
BSS126
13 Forward characteristics of reverse diode 15 Typ. gate charge
IF=f(VSD)VGS=f(Qgate); ID=0.1 A pulsed
parameter: Tjparameter: VDD
16 Drain-source breakdown voltage
ID=f(VGS); VDS=3 V; Tj=25 °C
500
540
580
620
660
700
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
0.2 VDS(max) 0.5 VDS(max)
0.8 VDS(max)
-4
-3
-2
-1
0
1
2
3
4
5
6
0 0.4 0.8 1.2 1.6
Qgate [nC]
VGS [V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
0.001
0.01
0.1
0 0.5 1 1.5 2 2.5
VSD [V]
IF [A]
Rev. 1.3 page 7 2006-06-14
BSS126
Packa
g
e Outline:
Footprint: Packaging:
Dimensions in mm
Rev. 1.3 page 8 2006-06-14
BSS126
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81451 München
©
Infineon Technologies AG 1999
All Rights Reserved.
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warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices, please contact your
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
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effectiveness of that device or system. Life support devices or systems are intended to be implanted
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Rev. 1.3 page 9 2006-06-14
