1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES * Glass passivated junction * Hermetically envelope sealed axial-leaded glass * Controlled avalanche characteristics * Low reverse current * High surge current loading * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 949539 MECHANICAL DATA Case: SOD-57 APPLICATIONS Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 * Rectification diode, general purpose Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY 1N5062 1N5062TR 5000 per 10" tape and reel 25 000 1N5062 1N5062TAP 5000 per ammopack 25 000 TYPE DIFFERENTIATION PACKAGE PARTS TABLE PART 1N5059 VR = 200 V; IF(AV) = 2 A SOD-57 1N5060 VR = 400 V; IF(AV) = 2 A SOD-57 1N5061 VR = 600 V; IF(AV) = 2 A SOD-57 1N5062 VR = 800 V; IF(AV) = 2 A SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER Reverse voltage = repetitive peak reverse voltage Peak forward surge current Average forward current Pulse energy in avalanche mode, non repetitive (inductive load switch off) TEST CONDITION PART SYMBOL VALUE UNIT 1N5059 VR = VRRM 200 V 1N5060 VR = VRRM 400 V 1N5061 VR = VRRM 600 V 1N5062 VR = VRRM 800 V tp = 10 ms, half sine wave IFSM 50 A See electrical characteristics TthJA = 45 K/W, Tamb = 50 C IF(AV) 2 A TthJA = 100 K/W, Tamb = 75 C IF(AV) 0.8 A I(BR)R = 1 A, inductive load ER 20 mJ Tj = Tstg - 55 to + 175 C Junction and storage temperature range MAXIMUM THERMAL RESISTANCE (Tamb = 25 C, unless otherwise specified) PARAMETER Junction ambient Rev. 1.7, 12-Sep-12 TEST CONDITION SYMBOL VALUE Lead length l = 10 mm, TL = constant RthJA 45 UNIT K/W On PC board with spacing 25 mm RthJA 100 K/W Document Number: 86000 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX UNIT IF = 1 A VF - - 1 V IF = 2.5 A VF - - 1.15 V VR = VRRM IR - - 1 A VR = VRRM, Tj = 100 C IR - - 10 A VR = VRRM, Tj = 150 C IR - - 100 A 1N5059 V(BR)R 225 - 1600 V 1N5060 V(BR)R 450 - 1600 V 1N5061 V(BR)R 650 - 1600 V 1N5062 V(BR)R 900 - 1600 V VR = 0 V, f = 1 MHz CD - 40 - pF IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 4 s Forward voltage Reverse current IR = 100 A Breakdown voltage Diode capacitance Reverse recovery time PART TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 3.0 I FAV - Average Forward Current (A) PR - Reverse Power Dissipation ( mW ) 200 V R = VRRM R thJA = 160 1N5062 45 K/W 120 100 K/W 1N5061 160 K/W 80 1N5060 1N5059 40 0 25 75 100 125 150 1.5 1.0 0 15763_1 Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature 100 IF - Forward Current ( A ) V R = VRRM 100 10 1 0.1 25 15765 50 75 100 125 150 175 Tj - Junction Temperature ( C ) Fig. 2 - Max. Reverse Current vs. Junction Temperature Rev. 1.7, 12-Sep-12 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (C) Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 I R - Reverse Current ( A ) RthJA = 100 K/W PCB: d = 25 mm 0.5 175 Tj - Junction Temperature ( C ) 15764 R thJA = 45 K/W l =10 mm 2.0 0.0 50 V R = VRRM half sinewave 2.5 10 1 Tj = 175 C Tj = 25C 0.1 0.01 0.001 0 15762 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V F - Forward Voltage ( V ) Fig. 4 - Max. Forward Current vs. Forward Voltage Document Number: 86000 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors C D - Diode Capacitance ( pF ) 50 f =1 MHz 40 30 20 10 0 0.1 1 10 100 V R - Reverse Voltage ( V ) 15766 Fig. 5 - Diode Capacitance vs. Reverse Voltage 3.6 (0.142) max. 0.82 (0.032) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-57 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 20543 Rev. 1.7, 12-Sep-12 Document Number: 86000 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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