BUZ 323 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 323 400 V 15 A 0.3 TO-218 AA C67078-S3127-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 C Values Unit A 15 IDpuls Pulsed drain current TC = 25 C 60 Avalanche current,limited by Tjmax IAR 15 Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse EAR 18 mJ EAS ID = 15 A, VDD = 50 V, RGS = 25 L = 6.14 mH, Tj = 25 C 790 Gate source voltage VGS Power dissipation Ptot TC = 25 C 20 V W 170 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC 0.74 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group C 55 / 150 / 56 1 07/96 BUZ 323 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 400 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS A VDS = 400 V, VGS = 0 V, Tj = 25 C - 0.1 1 VDS = 400 V, VGS = 0 V, Tj = 125 C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) VGS = 10 V, ID = 9.5 A Semiconductor Group nA - 2 0.25 0.3 07/96 BUZ 323 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS 2 * ID * RDS(on)max, ID = 9.5 A Input capacitance 8 pF - 2300 3000 - 320 480 - 120 180 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 14.5 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Rise time - 40 65 - 75 115 - 270 350 - 130 170 tr VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Fall time tf VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Semiconductor Group 3 07/96 BUZ 323 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed - - 60 V 1.1 1.5 trr ns - 120 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 15 - VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge - VSD VGS = 0 V, IF = 30 A Reverse recovery time - ISM TC = 25 C Inverse diode forward voltage A C - 4 0.25 - 07/96 BUZ 323 Drain current ID = (TC) parameter: VGS 10 V Power dissipation Ptot = (TC) 16 180 A W Ptot ID 140 120 12 10 100 8 80 6 60 4 40 2 20 0 0 0 20 40 60 80 100 120 C 0 160 20 40 60 80 100 120 TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C C 160 TC Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 2 10 0 t = 1000.0ns p 10 s A /I D ID K/W ZthJC =V DS 100 s 10 -1 DS (o n) 10 1 R 1 ms 10 ms D = 0.50 0.20 10 0 10 -2 0.10 0.05 0.02 single pulse DC 0.01 10 -1 0 10 10 1 10 2 V 10 10 -3 -7 10 3 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 323 Typ. output characteristics ID = (VDS) Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS parameter: tp = 80 s 34 kj i h g A ID 0.9 Ptot = 170W l f e a b c VGS [V] 28 24 d 20 16 c 4.0 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 b l 20.0 12 8 a RDS (on) 0.7 0.6 0.5 d 0.4 e f g h j i k 0.3 0.2 4 VGS [V] = 0.1 a 4.0 4.5 a 0 0 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0.0 4 8 12 16 V 24 0 4 8 12 16 20 VDS A 26 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max parameter: tp = 80 s, VDS2 x ID x RDS(on)max 18 15 A S 13 ID 12 gfs 14 11 12 10 9 10 8 7 8 6 6 5 4 4 3 2 1 0 0 2 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0 2 4 6 8 10 12 A ID 07/96 15 BUZ 323 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 9.5 A, VGS = 10 V 1.3 4.6 V 1.1 RDS (on) 98% 4.0 VGS(th) 1.0 3.6 0.9 3.2 0.8 2.8 0.7 2.4 0.6 typ 2% 2.0 0.5 98% 0.4 typ 1.6 1.2 0.3 0.8 0.2 0.4 0.1 0.0 -60 -20 20 60 100 C 0.0 -60 160 -20 20 60 100 C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF Ciss C 10 0 10 1 Coss 10 -1 10 0 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 07/96 3.0 BUZ 323 Avalanche energy EAS = (Tj ) parameter: ID = 15 A, VDD = 50 V RGS = 25 , L = 6.14 mH EAS Typ. gate charge VGS = (QGate) parameter: ID puls = 22 A 800 16 mJ V VGS 600 12 500 10 400 8 300 6 200 4 100 2 0 20 0,2 VDS max 0,8 VDS max 0 40 60 80 100 120 C 160 Tj 0 20 40 60 80 100 120 140 nC 170 Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 480 V 460 V(BR)DSS 450 440 430 420 410 400 390 380 370 360 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 BUZ 323 Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 07/96