DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 1PS226 High-speed double diode Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed double diode 1PS226 FEATURES DESCRIPTION * Small plastic SMD package The 1PS226 consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the small plastic SMD SC59 package. * High switching speed: max. 4 ns * Continuous reverse voltage: max. 80 V * Repetitive peak reverse voltage: max. 85 V PINNING PIN DESCRIPTION 1 anode 2 cathode 3 common connection * Repetitive peak forward current: max. 500 mA. 2 1 APPLICATIONS * High-speed switching in e.g. surface mounted circuits. 2 1 3 3 Top view MAM083 Marking code: C3T. Fig.1 Simplified outline (SC59) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage - 85 V VR continuous reverse voltage - 80 V IF continuous forward current single diode loaded; see Fig.2; note 1 - 215 mA double diode loaded; see Fig.2; note 1 - 125 mA - 500 mA t = 1 s - 4 A t=1s - 0.5 A IFRM repetitive peak forward current IFSM non-repetitive peak forward current square wave; Tj = 25 C prior to surge - 250 storage temperature -65 +150 C junction temperature - 150 C Ptot total power dissipation Tstg Tj Tamb = 25 C; note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 03 2 mW Philips Semiconductors Product specification High-speed double diode 1PS226 ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT IF = 1 mA 610 - mV IF = 10 mA 740 - mV IF = 50 mA - 1.0 V IF = 100 mA - 1.2 V Per diode VF IR forward voltage reverse current see Fig.3 see Fig.4 VR = 25 V - VR = 80 V - VR = 25 V; Tj = 150 C - 30 A 100 A 30 0.5 nA A VR = 80 V; Tj = 150 C - Cd diode capacitance f = 1 MHz; VR = 0; see Fig.5 - 1.5 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.6 - 4 ns Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.7 - 1.75 V THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 03 3 VALUE UNIT 250 K/W 500 K/W Philips Semiconductors Product specification High-speed double diode 1PS226 GRAPHICAL DATA MBD033 300 MBG382 300 handbook, halfpage IF (mA) IF (mA) (1) 200 (2) (3) 200 single diode loaded double diode loaded 100 100 0 0 0 100 T amb ( oC) 200 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 MBG380 2 10halfpage handbook, 2 VF (V) Forward current as a function of forward voltage. MBG446 0.8 handbook, halfpage Cd (pF) IR (A) 0.6 10 (1) 1 10 1 (1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 0 (2) (3) 0.4 1 0.2 10 2 0 100 Tj (oC) 0 0 200 (1) VR = 80 V; maximum values. (2) VR = 80 V; typical values. (3) VR = 25 V; typical values. f = 1 MHz; Tj = 25 C. Fig.4 Fig.5 Reverse current as a function of junction temperature. 1996 Sep 03 4 4 8 12 VR (V) 16 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed double diode 1PS226 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 IF SAMPLING OSCILLOSCOPE t rr t R i = 50 V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Fig.6 Reverse recovery voltage test circuit and waveforms. I 1 k 450 V I 90% R S = 50 D.U.T. OSCILLOSCOPE V fr R i = 50 10% MGA882 t tr input signal Fig.7 Forward recovery voltage test circuit and waveforms. 1996 Sep 03 5 t tp output signal Philips Semiconductors Product specification High-speed double diode 1PS226 PACKAGE OUTLINE 1.65 1.25 handbook, full pagewidth 0.50 0.35 0.2 M A 0.100 0.013 1.3 1.0 A 3 3.0 2.5 1.7 1.3 2 1 2.1 1.7 3.1 2.7 0.6 0.2 MSA313 - 1 0.26 0.10 Dimensions in mm. Fig.8 SC59. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 03 6