DPG 60 C 300 HB V RRM = 300 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 300 HB Backside: cathode Features / Advantages: Applications: Package: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Housing: TO-247 Conditions rIndustry standard outline rEpoxy meets UL 94V-0 rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. typ. max. Unit 300 V VR = 300 V 1 A VR = 300 V TVJ = 150 C 0.1 mA TVJ = 25 C 1.34 V 1.63 V 1.06 V 1.39 V TC = 135C 30 A TVJ = 175C 0.70 V IF = 30 A IF = 60 A IF = 30 A IF = 60 A rectangular TVJ = 150 C d = 0.5 for power loss calculation only R thJC t rr min. TVJ = 25 C TVJ = 25 C -55 10.5 m 0.95 K/W 175 C TC = 25 C 160 W t = 10 ms (50 Hz), sine TVJ = 45C 360 A TVJ = 25 C 3 A IF = TVJ = 125C 7 A 30 A; VR = 200 V -di F /dt = 200 A/s VR = 150 V; f = 1 MHz TVJ = 25 C 35 ns TVJ = 125C 55 ns TVJ = 25 C 50 pF Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20100125b DPG 60 C 300 HB Ratings Symbol Definition min. Conditions I RMS RMS current RthCH thermal resistance case to heatsink Tstg storage temperature per pin max. Unit 50 0.25 -55 Weight A K/W 150 C 6 MD mounting torque FC mounting force with clip 1) typ. 1) g 0.8 1.2 Nm 20 120 N IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part number Logo Marking on product DateCode Assembly Code Ordering Standard D P G 60 C 300 HB abcdef YYWW = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) XXXXXX Part Name DPG 60 C 300 HB Similar Part DPG60C300QB DPG60C300HJ DPG60C300PC DPF60C300HB DPG80C300HB IXYS reserves the right to change limits, conditions and dimensions. Marking on Product DPG60C300HB Package TO-3P (3) ISOPLUS247 (3) TO-263AB (D2Pak) TO-247AD (3) TO-247AD (3) Delivering Mode Tube Base Qty Code Key 30 502163 Voltage Class 300 300 300 300 300 Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20100125b DPG 60 C 300 HB Outlines TO-247 IXYS reserves the right to change limits, conditions and dimensions. Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 O P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20100125b DPG 60 C 300 HB 16 80 0.4 IF = 60 A 30 A 15 A 70 60 14 12 0.3 50 IF [A] 10 Qrr TVJ = 150C IRM [C] 40 IF = 60 A 30 A 15 A 8 [A] 0.2 6 30 20 25C TVJ = 125C VR = 200 V 10 0.0 0.4 0.8 1.2 VF [V] 1.6 0 2.0 TVJ = 125C VR = 200 V 4 0.1 200 400 2 600 0 200 Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt Fig. 1 Forward current IF versus forward voltage VF 1.4 600 Fig. 3 Typ. reverse recovery current IRM versus -diF /dt 600 70 TVJ = 125C VR = 200 V 1.2 400 -diF /dt [A/s] -diF /dt [A/s] VFR tfr 60 1.0 12 500 10 400 8 tfr 300 [ns] 6 200 4 50 trr [ns] Kf 0.8 0.6 IF = 60 A 30 A 40 15 A IRM 30 0.4 Qrr 0.2 0 20 40 80 120 160 0 0 TVJ [C] Fig. 4 Dynamic parameters Qrr, IRM versus T VJ 200 400 -diF /dt [A/s] 600 Fig. 5 Typ. reverse recovery time trr versus -diF /dt 16 TVJ = 125C VR = 200 V IF = 30 A 100 0 200 400 -diF /dt [A/s] VFR [V] 2 0 600 Fig. 6 Typ. forward recovery voltage VFR & forward recovery time tfr vs. diF /dt 1.2 TVJ = 125C 14 VR = 200 V 1.0 12 Erec [J] 0.8 IF = 15 A 10 ZthJC 30 A 60 A 8 0.6 [K/W] 6 Rthi [K/W] 0.1311 0.1377 0.3468 0.2394 0.095 0.4 4 0.2 2 0.0 0 200 400 -diF /dt [A/s] 600 Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. 1 10 100 t [ms] 1000 ti [s] 0.0018 0.002 0.012 0.07 0.345 10000 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20100125b